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    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
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    ADLINK Technology Inc SSD-128G SATA BiCS 5

    Solid State Drives - SSD SSD, SATA 2.5", SATA 6Gbps, 128GB, 5V, 112 layers 3D TLC, 420MB SR/290MB SW, TBW:341TB, MTBF>3MH, OP Temp:0-70
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    Mouser Electronics SSD-128G SATA BiCS 5
    • 1 $63.92
    • 10 $57.54
    • 100 $48.23
    • 1000 $48.23
    • 10000 $48.23
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    ADLINK Technology Inc SSD-128GB SATA BiCS 5

    Solid State Drives - SSD SSD, SATA 2.5", SATA 6Gbps, 128GB, 5V, WD 112 layers 3D TLC, 430MB SR/260MB SW, TBW:341TB, MTBF>3MH, OP Temp:0-70
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    Mouser Electronics SSD-128GB SATA BiCS 5
    • 1 $59.51
    • 10 $55.19
    • 100 $45.47
    • 1000 $45.47
    • 10000 $45.47
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    ADLINK Technology Inc SSD-256GB SATA BiCS 5

    Solid State Drives - SSD SSD, SATA 2.5", SATA 6Gbps, 256GB, 5V, WD 112 layers 3D TLC, 420MB SR/260MB SW, TBW:682TB, MTBF>3MH, OP Temp:0-70
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    Mouser Electronics SSD-256GB SATA BiCS 5
    • 1 $74.57
    • 10 $67.13
    • 100 $56.27
    • 1000 $56.27
    • 10000 $56.27
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    ADLINK Technology Inc SSD-256G SATA BiCS 5

    Solid State Drives - SSD SSD, SATA 2.5", SATA 6Gbps, 256GB, 5V, 112 layers 3D TLC, 530MB SR/500MB SW, TBW:682TB, MTBF>3MH, OP Temp:0-70
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    Mouser Electronics SSD-256G SATA BiCS 5
    • 1 $87
    • 10 $78.32
    • 100 $65.65
    • 1000 $65.65
    • 10000 $65.65
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    ADLINK Technology Inc SSD-512GB SATA BiCS 5

    Solid State Drives - SSD SSD, SATA 2.5", SATA 6Gbps, 512GB, 5V, WD 112 layers 3D TLC, 550MB SR/520MB SW, TBW:1364TB, MTBF>3MH, OP Temp:0-70
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    Mouser Electronics SSD-512GB SATA BiCS 5
    • 1 $113.63
    • 10 $102.3
    • 100 $97.94
    • 1000 $97.94
    • 10000 $97.94
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    TAB IC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC IGBT 15N120

    Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT
    Text: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions


    Original     		15N120 O-220 O-263 O-263 O-220 IC IGBT 15N120 15n120 "bi-directional switches" IGBT bi-directional switches IGBT PDF

    5n160g

    Abstract: IXBP 5N160 G D-68623 transistor 2146
    Text: Advanced Technical Information IXBP 5N160 G IXBH 5N160 G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor C IC25 VCES VCE sat tf = 5.7 A = 1600 V = 4.9 V = 70 ns TO-220 AB G C E C (TAB) G TO-247 AD E G C E C (TAB) A = Anode, C = Cathode , TAB = Cathode


    Original     		5N160 O-220 O-247 5n160g IXBP 5N160 G D-68623 transistor 2146 PDF

    10BT

    Abstract: J00-0014 J00-0025 J00-0042 J00-0051 J00-0062 J00-0063 standard RJ45 connector dimension drawing for 10 pins j414a
    Text: STARJACK TM 1X1 Tab-DOWN RJ45 www.pulseeng.com Description: 10/100 Base-TX RJ45 1X1 Tab-DOWN without LEDs 8-pin integrated magnetics connector ICM , designed to support high volume cost-conscious consumer applications, such as ADSL modems, Cable modems, STB and


    Original     		10Base-T 100Base-T 10BT J00-0014 J00-0025 J00-0042 J00-0051 J00-0062 J00-0063 standard RJ45 connector dimension drawing for 10 pins j414a PDF

    JG0-0028NL

    Abstract: JG0-0025NL JG0-0027NL
    Text: PulseJack 1xN Tab-Up Description: 10/100/1000 Base-T RJ45 1xN Tab-UP Integrated Connector Module ICM with or without LEDs, designed to support such applications as: SOHO (ADSL modems), LAN-on-Motherboard (LOM), Hub and Switches. Features and Benefits:


    Original     		10-pin JG0-0023NL JG0-0024NL JG0-0025NL JG0-0026NL JG0-0027NL JG0-0028NL JG0-0028NL PDF

    RX475

    Abstract: PulseJack J0011D21B
    Text: PULSEJACK TM 1x1 Tab-DOWN RJ45 www.pulseeng.com Description: 10/100 Base-TX RJ45 1x1 Tab-DOWN with LEDs 8-pin J0 series integrated magnetics connector (ICM), designed to support applications, such as SOHO (ADSL modems), LAN-on-Motherboard (LOM), Hub and Switches.


    Original     		100Base-T RX475 PulseJack J0011D21B PDF

    11CT1A

    Abstract: 11CT 1A J00-0065NL RJ45 LED J0026D21BNL J0026D01NL J0026D01BNL J0026D21NL J0026D21GNL J0011D21BNL
    Text: PulseJack 1x1 Tab-DOWN RJ45 Description: 100 Base-TX Fast Ethernet RJ45 1x1 Tab-DOWN with LEDs 8-pin (J0 series) intergrated magnetics connector (ICM), designed to support applications, such as SOHO (ADSL modems), LAN-on-Motherboard (LOM), Hub and Switches.


    Original     		J0006D21BNL 100Base-TX 1500Vrms 11CT1A 11CT 1A J00-0065NL RJ45 LED J0026D21BNL J0026D01NL J0026D01BNL J0026D21NL J0026D21GNL J0011D21BNL PDF

    Untitled

    Abstract: No abstract text available
    Text: PULSEJACK TM 1x1 Tab-DOWN RJ45 www.pulseeng.com Description: 10/100 Base-TX RJ45 1x1 Tab-DOWN with LEDs 8-pin J0 series integrated magnetics connector (ICM), designed to support applications, such as SOHO (ADSL modems), LAN-on-Motherboard (LOM), Hub and Switches.


    Original     		100Base-T 1500Vrms PDF

    bj 945

    Abstract: H7805 h7812aj H7812 H7808 BJ 927 H78XX H7806 L0506
    Text: HI-SINCERITY Spec. No. : IC200405 Issued Date : 2004.04.01 Revised Date : 2006.01.19 Page No. : 1/12 MICROELECTRONICS CORP. H78XX Series H78XX Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: VIN Pin 2 & Tab: GND Pin 3: VOUT Tab 3-TERMINAL POSITIVE VOLTAGE REGULATORS


    Original     		IC200405 H78XX O-252 de183oC 217oC 260oC 10sec bj 945 H7805 h7812aj H7812 H7808 BJ 927 H7806 L0506 PDF

    15n120

    Abstract: No abstract text available
    Text: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original     		15N120 O-263AB 20110120b 15n120 PDF

    Discrete IGBTS

    Abstract: 100uH SMD SG20N12DT SG20N12T
    Text: SG20N12T, SG20N12DT Discrete IGBTs Dimensions TO-247AD E C G C TAB SG20N12T G=Gate, C=Collector, E=Emitter,TAB=Collector SG20N12DT Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient IC25 IC90 ICM


    Original     		SG20N12T, SG20N12DT O-247AD SG20N12T 150oC; 100uH; 00A/us 100oC 00A/us; Discrete IGBTS 100uH SMD SG20N12DT SG20N12T PDF

    Untitled

    Abstract: No abstract text available
    Text: IXDA 20N120AS IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK


    Original     		20N120AS O-263 20110118a PDF

    Discrete IGBTS

    Abstract: tab ic SG45N12T
    Text: SG45N12T Discrete IGBTs Dimensions TO-247AD E C G C TAB G=Gate, C=Collector, E=Emitter,TAB=Collector SG45N12T Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient IC25 IC90 ICM TC=25oC; limited by leads


    Original     		SG45N12T O-247AD 150oC; 125oC Discrete IGBTS tab ic SG45N12T PDF

    GP3HF60HD

    Abstract: STGP3HF60HD
    Text: STGD3HF60HD STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features • Minimal tail current TAB • Low conduction and switching losses • Ultrafast soft recovery antiparallel diode TAB 3 3 1 1 DPAK 2 Applications


    Original     		STGD3HF60HD STGP3HF60HD O-220 STGD3HF60HDT4 GD3HF60HD DocID17690 GP3HF60HD STGP3HF60HD PDF

    IC120

    Abstract: STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 GE 019-4
    Text: STGB35N35LZ EAS 450 mJ, 345 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop TAB TAB ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Application


    Original     		STGB35N35LZ SC30180 IC120 STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 GE 019-4 PDF

    SG50N06DT

    Abstract: SG50N06T
    Text: SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD E C G C TAB G=Gate, C=Collector, E=Emitter,TAB=Collector SG50N06DT SG50N06T Symbol Test Conditions o o Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C


    Original     		SG50N06T, SG50N06DT O-247AD SG50N06T 150oC; 300ms, 00A/ms 00A/ms; SG50N06DT SG50N06T PDF

    MG15J6ES40

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15J6ES40 GTR Module Unit in mm Silicon N Channel IGBT 10-FAST-ON-TAB+ 110 High Power Switching Applications 10.5*0.6 5.5 ±0.6 5-FAST-ON-TAB+2SO 2 -0 5 .6 1 0 .3 Motor Control Applications Features • 6 IGBTs are built into 1 package


    OCR Scan     		MG15J6ES40 10-FAST-ON-TAB+ 15under PW03030796 MG15J6ES40 PDF

    Untitled

    Abstract: No abstract text available
    Text: nixYS DSSK 10-018A Advanced Technical Data Power Schottky Rectifier •FAV with common cathode V rrm 2x5 A 180 V 0.62 V VF v TO-220 AB RSM V V rrm Type V ■ I-] A 180 180 C A DSSK 10-018A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions


    OCR Scan     		0-018A O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IC110 IXBF42N300 100ms 42N300 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage IGBT IXGF36N300 VCES = 3000V = 36A IC25 VCE sat ≤ 2.7V For Capacitor Discharge Apllications ( Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VGES Continuous


    Original     		IXGF36N300 IC110 36N300 8-21-08-B PDF

    100n60

    Abstract: IXXR100N60B3H1
    Text: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings


    Original     		10-30kHz IC110 IXXR100N60B3H1 150ns 0-06A 100N60B3 12-01-11-B 100n60 IXXR100N60B3H1 PDF

    100N120C3

    Abstract: No abstract text available
    Text: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		IXYR100N120C3 IC110 110ns ISOPLUS247TM 100N120C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGF20N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500


    Original     		IXGF20N250 50/60Hz, 20N250 4P-P528 2-04-09-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information MMIX2S50N60B4D1 Low Gain IGBT w/ Diode ES1 ES2 G1 G2 Electrically Isolated Tab VCES IC90 VCE(sat) tfi(typ) = = ≤ = 600V 30A 2.0V 50ns ES1 Short Circuit SOA Capability E1 G1 C2 C1E2 ES2 Symbol Test Conditions Maximum Ratings


    Original     		MMIX2S50N60B4D1 IF110 PDF

    G50N60

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE sat ≤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IC110 IXGJ50N60C4D1 O-247TM E153432 IF110 50N60C4 0-06-11-A G50N60 PDF