TAA 761 A Search Results

TCA311

Abstract: TBB 1458 tca 311 tab-1453 tca 765 TCA 325 A TCA331 tca 761 TAA761 TAA 761 A
Contextual Info: Integrated Circuits Operational amplifiers with NPN input Single op amps Type ^amb Kt V TAA761 G* TAA765G * TAA861 G* TAA865G * TAA 761 K JQ mA Characteristics famb =25 °C, K s=15V d v q / dt r K c Ko h V |iA V/jis mV 70 70 70 70 70 ±6 ±6 ±10 ±10

information applikation

Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Contextual Info: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK

TAA 761 A

Abstract: 85280-X 814100 TAA 761 Application fujitsu 814100 B8528
Contextual Info: M ay 1990 IP R O D U C T p r o f il e FUJITSU : MB85280-80/-10/-12 CMOS 4M X 8 FAST PAGE MODE DRAM MODULE The Fujitsu M B 85280 is a fully decoded, C M O S dynam ic random access m em ory D R A M m odule consisting o f eight M B814100 devices. The M B85280 is optim ized fo r tho se applications requiring high speed, high

Contextual Info: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling

LC 7258

Abstract: 7C266 203CE
Contextual Info: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

Contextual Info: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 S E R IE S 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.

5117404

Contextual Info: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?

Contextual Info: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques

tantalum Capacitor A8 Jh

Contextual Info: 21014 1M 262,144 x 4 DYNAMIC RAM WITH FAST PAGE MODE • Performance Range Parameter 21014-07 21014-08 Units tRAC Access Time from RAS 70 80 ns *CAC Access Time from CAS 20 25 ns tRC Read Cycle Time 130 160 ns Symbol ■ Fast Page Mode Operation ■ Single 5V ±10% Power Supply

M5M417400BJ

Abstract: M5M417400B
Contextual Info: M 5 M 7S 4 1 7 4 0 0 B J ,T P ,R T -5 ,- 6 ,- 7 ,-5 S , FAST PAGE MODE 16777216-BIT 41943Û4-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power

Contextual Info: SAHSUN6 ELECTRONICS INC b?E ]> WË TlbMlME 0 0 1 b 0 ? l KM41C16100L T'îS • sriGK CMOS DRAM 16M X1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

MC-422000FA64FB

Contextual Info: PRELIM INARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / MC-422000FA64FB 2 M-WORD BY 64-BIT DYNAMIC RAM MODULE HYPER PAGE MODE Description The MC-422000FA64FB is a 1,048,576 words by 64 bits dynamic RAM module on which 8 pieces of 16 M DRAM: /iPD4218165 are assembled.

AN 7112E

Contextual Info: FUJITSU MICROELECTRONICS F U JIT SU 53E D 3 7 417b2 PROGRAMMABL SCHOTTKY? 256!-B ll READ?ONÜfMEMOR’ QQDÖ737 MB MB MB MB ñ 7111E/H 7112E/H/Y 7111L 7112L March 1986 Edition 2.0 SCHOTTKY 256 BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB 7111 and MB 7112 are high speed Schottky T T L electrically

Contextual Info: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.

333Q

Abstract: 27C64 CY7C266 a50tb
Contextual Info: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64

Contextual Info: MH8M40AJD-6,-7 FAST PAGE MODE 335544320-BIT 8388608-WORD BY 40-BIT DYNAMIC RAM DESCRIPTION The M H 8 M 4 0 A J D is 8 3 8 8 6 0 8 -w o rd x 4 0 -b it d yna m ic R AM . PIN CONFIGURATION (TOP VIEW) [Both side, 2-Layer] This c o n s is ts o f tw e n ty in d u s try sta n d a rd 4 M x 4 d ynam ic

Contextual Info: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

KM428C128

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 SAMSUNG ELECTRONICS INC 7 = ^ 4 1 4 2 OaiGbMb T 42E D 128KX8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 12 8 K X 8 bit Dual

Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)

FZH 191

Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
Contextual Info: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine