TA98 Search Results

D 835

Abstract: 8275mhz
Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 827.5 MHz MODEL NO.: TA981A REV. NO.:1

G8060

Abstract: ruru8060 RUR 0820 TB-01
Contextual Info: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number

ruru8060

Abstract: RURU8040 RURU8050
Contextual Info: RURU8040, RURU8050, RURU8060 S E M I C O N D U C T O R 80A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<75ns JEDEC STYLE SINGLE LEAD TO-218 o ANODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

RFP40N10

Contextual Info: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs Features Title FG4 10, P40 0, 1S4 10S These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

InGaAs photodiode 1310 1550

Contextual Info: PD LD Inc. PTIN15- Series PTIN62- Series InGaAs PIN TIA Receivers PD-LD Inc. offers low noise, high responsivity InGaAs photo detectors paired with a transimpedance amplifiers TIA in convenient fiber coupled packages. These assemblies incorporate a 75 micron diameter active area

Tektronix 2245a

Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
Contextual Info: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note

MBS 14

Abstract: MBS 1250
Contextual Info: PD Inc LD PTIN15- Series PTIN62- Series InGaAs PIN TIA Receivers PD-LD Inc. offers low noise, high responsivity InGaAs photo detectors paired with a transimpedance amplifiers TIA in convenient fiber coupled packages. These assemblies incorporate a 75 micron diameter active area

D370-02A

Abstract: D370-10A D370-20A TA-TSY-000983 TR-NWT-000468 D370-10F Laser Module Telcordia Technologies
Contextual Info: Data Sheet October 2000 D370-Type Digital Uncooled Laser Module Applications • Long-reach SONET OC-3/OC-12 systems ■ SDH STM-1/STM-4 systems ■ Telecommunications ■ Secure digital data systems Benefits The low-profile D370-Type Laser Module is ideally suited for

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

Contextual Info: « RURU8070, RURU8080, RURU8090, RURU80100 80A, 700V - 1000V Ultrafast Diodes A p r ii 1 9 9 5 Features Package • U Itrafast with Soft JEDEC STYLE SINGLE LEAD TO-218 • Operating

Contextual Info: Advance Data Sheet April 1998 microelectronics group 3 r Lucent Technologies Bell Labs Innovations A371-Type Analog Uncooled Isolated DFB Flat-PAC Laser Module • No thermoelectric cooler required ■ Single- and double-isolated versions available ■ High output power: typically 2.0 mW peak power

RURG8040

Contextual Info: HA RR IS S E M I C O N D S E C T O R ih a rris W bflE D • 43 D2 27 1 D D S Q BT S 33S M H A S HUHG8040, RURG8050 RURG8060 SEMICONDUCTOR 80A, 400V - 600V Ultrafast Diodes December 1993 Features • Ultrafast with Soft Recovery. <75ns

ta143

Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.

RFP22N10

Contextual Info: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

Contextual Info: SPM3201A Antenna Switch MMIC TENTATIVE Features and Applications ・Control voltage ＋3/0V. ・Miniature package of mini mold. TSSOP-8 ・Low loss and high linearity Absolute Maximum Ratings／Ta=25℃ unit Control Voltage Storage Temperature Operating Temperature

D371-22A

Abstract: D371-10A D371-20A D371-20B
Contextual Info: a ere " J AdLiI b OCR Evaluation J 1 V 1 1 1 J Data Sheet January 1999 D371-Type Digital Uncooled DFB Laser Module Applications . Long-reach SONET OC-3/OC-12 systems . Telecommunications . Secure digital data systems Benefits . Easily board mounted . Requires no lead bending

BVces

Abstract: diagram induction AN7254 AN7260 G34N100E2 HGTG34N100E2
Contextual Info: HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 710ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss

TA9886

Abstract: RURU8050
Contextual Info: i l i h a r r is \M J SEMI CONDUCTOR RURU8040, RURU8050 RURU8060 80A, 400V - 600V Ultrafast Diodes December 1993 Features • Ultrafast with Soft Recovery. <75ns • Operating Temperature. +175°C

Indium 5.7 LT

Abstract: D571 LUCENT 1550 lucent 1550 nm
Contextual Info: m i c r o e l e c t r o n i c s gr o u p Advance Data Sheet January 1999 Lucent Technologies Bell Labs Innovations D571-Type Digital 1.5 jim Uncooled DFB FastLight Laser Mod ule • Hermetically sealed active components ■ Internal back-facet monitor ■ Qualification program: Bellcore TA-983

Contextual Info: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled FastLight Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available ■ Hermetically sealed active components

Contextual Info: Data Sheet January 1999 gr oup Lucent Technologies Bell Labs Innovations D372-Type Digital Uncooled DFB FastLight Laser Module for 2.5 Gbits/s Applications Applications • SONET OC-48/STM-16 systems ■ Telecommunications ■ Secure digital data systems

D370

Contextual Info: Advance Data Sheet February 1997 microelectronics group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber. 0.2 mW and 2.0 mW versions available

Contextual Info: m i c r o e l e c t r o n i c s gr oup Advance Data Sheet February 1997 Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB Mini-DIL Laser Module a High output power: typical 2.0 mW peak power coupled into single-mode fiber • Hermetically sealed active components

Contextual Info: group Advance Data Sheet August 1998 Lucent Technologies Bell Labs Innovations D374-Type Digital Uncooled 2.5 Gbits/s FastLight Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available