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    KEMET Corporation C410C472K5R5TA9526

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    KEMET Corporation C350C105K1R5TA9523

    1.00UF 100V
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    DigiKey C350C105K1R5TA9523 Bulk 300
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    KEMET Corporation C320C683K5R5TA9572

    .068UF 50.0V
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    DigiKey C320C683K5R5TA9572 Bulk 2,000
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    Avnet Abacus C320C683K5R5TA9572 27 Weeks 2,500
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    KEMET Corporation C320C224K5R5TA9573

    .220UF 50.0V
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    DigiKey C320C224K5R5TA9573 Bulk 500
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    KEMET Corporation C410C104K5R5TA9526

    .100UF 50.0V
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    DigiKey C410C104K5R5TA9526 Reel 5,000
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    TA95 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ta143

    Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


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    PDF gLTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta143 Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic

    pa 66 gf

    Abstract: idc shrouded header LR46923 98464 TA-959 DPS-12-011 GS-12-415
    Text: S TIME adtimes D LEA basicsle T OR .com/ H S .fci w ww W E N Product Catalog 2.00 mm SECTION www.fci.com/basics 1 MinitekTM UNSHROUDED VERTICAL HEADERS TECHNICAL DATA PHYSICAL Housing: High-temperature, black thermoplastic Flammability rating: UL 94 V-0 Pin: Phosphor-bronze


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    PDF

    toolings

    Abstract: leaf spring design Double Row, 40 Positions, 2.54 mm 0.1 in., Right Angle Header TA-895 76347-403LF 7731-1 Series HT-0095 FCI 69168 semi catalog 47439-002
    Text: S TIME adtimes D LEA basicsle T OR .com/ H S .fci w ww W E N Product Catalog www.fci.com/basics 1 FCI: SETTING THE STANDARD FOR CONNECTORS MO With operations in 30 countries and sales of 1.3 billion euros in 2007, FCI is a leading manufacturer of connectors.


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    PDF ELXBASICS0711EA4 toolings leaf spring design Double Row, 40 Positions, 2.54 mm 0.1 in., Right Angle Header TA-895 76347-403LF 7731-1 Series HT-0095 FCI 69168 semi catalog 47439-002

    ta66

    Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original
    PDF LTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta66 uA733 Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592

    TA-531

    Abstract: 32 PIN euro connectors fci 50 pin (2x25), 2mm pitch header connectors BUS-12-067 latch headers pa 66 gf HT-151 TA-895 Header 2x5 Pitch 2mm HT-0073
    Text: Product Catalog Dimension : mm inch www.fciconnect.com/basics 1 FCI: SETTING THE STANDARD FOR CONNECTORS MORE SERVICE. With 13,000 employees in 30 countries and sales of 1.25 billion euros in 2008, FCI is a leading manufacturer of connectors for various


    Original
    PDF co1615 ELXBASICSUS0610ELT TA-531 32 PIN euro connectors fci 50 pin (2x25), 2mm pitch header connectors BUS-12-067 latch headers pa 66 gf HT-151 TA-895 Header 2x5 Pitch 2mm HT-0073

    pa 66 gf

    Abstract: TA-895 idc shrouded header LR46923 latch headers 10087010 GS-12-415
    Text: 2.00 mm section Product Catalog Dimension : mm inch www.fciconnect.com/basics 1 MinitekTM UNSHROUDED VERTICAL HEADERS TECHNICAL DATA PHYSICAL Housing: High-temperature, black thermoplastic Flammability rating: UL 94 V-0 Pin: Phosphor-bronze Plating: Gold/GXT over 1.27 m (50μ”) nickel


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    PDF ELXBASICSUS0610ELT pa 66 gf TA-895 idc shrouded header LR46923 latch headers 10087010 GS-12-415

    Untitled

    Abstract: No abstract text available
    Text: Minitek Crimp-to-Wire Contacts and Housings 2,00 mm • Dual-beam contact design for highly reliable electrical performance ■ Latching key assures proper alignment and friction retention 69307 2x14 Technical Data Mating Data Physical Operating Temperature


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    PDF

    90311 E66906

    Abstract: 77139 LR46923 77138
    Text: Minitek CRIMP-TO-WIRE CONTACTS AND HOUSINGS 2.00 mm .079" Dual-beam contact design for highly reliable electrical performance Latching key assures proper alignment and friction retention TECHNICAL DATA Physical Housing: Black thermoplastic Flammability rating: UL 94 V-0


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    PDF 2002/95/IEC 101LF 90311 E66906 77139 LR46923 77138

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


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    PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    TA9520

    Abstract: No abstract text available
    Text: RFL2N05L, RFL2N06L HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, Logic Level, N-Channel Power MOSFETs July 1998 Description Features 2A, 50V and 60V Com patible with Autom otive Drive Requirements The RFL2N05L and RFL2N06L are N-channel enhancement


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    PDF RFL2N05L, RFL2N06L RFL2N05L RFL2N06L TA9520. 0-95i2 AN7254 AN7260. TA9520

    F15N05L

    Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
    Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m


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    PDF RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors

    f12n10l

    Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
    Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits


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    PDF RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter"

    f12n10l

    Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
    Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L


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    PDF 01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"

    Untitled

    Abstract: No abstract text available
    Text: H G F E NO. NO. METAL EMILY 99/08/03 CH ANG WILSON MEGA CH'Ks APPRs T2000-0020 EMILY NO. DRWNs EC M E GA C HA NG UPDATE R E V I S E FOR SHEET 4 APPRs PEG 99/10/12 T2000-0059 CH'Ks WILSON DRWNs NO ADDED LAI EC LAI 01/06/18 APPRs M ICH AE L EMILY OFF Lin T 2 0 0 P 0 2 I7


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    PDF T2000-0059 T2000-0020 T97-290 T97-387

    2C337

    Abstract: A953 RFP8N18L Transistor 5C5 RFM8N18L RFM8N20L RFP8N20L rg 625
    Text: 3875081 G E SOLID STATE 01 ÜE|3fl7SDâl GDlfl44G 4 Logic-Level Power MOSFETs _ ?"//' — - - RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L File Number 1514 N-Channel Logic Level Power Field-Effect Transistors L2 FET


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    PDF RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L RFM8N18L RFM8N20L RFP8N18L RFP8N20L IV03lâ 92CS-37226 2C337 A953 Transistor 5C5 rg 625

    Untitled

    Abstract: No abstract text available
    Text: Crimp-to-Wire Contacts and Housings 2.00 mm .079" FCI basics Dual-beam contact design for highly reliable electrical performance Latching key assures proper allignment and friction retention 2.00 mm (.079 Mating Data Technical Data Physical Operating Temperature


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    PDF E66906 i-------------------------------77138 1-888-499-4FCI

    RFL1N08L

    Abstract: RFL1N10L RFP2N08L RFP2N10L
    Text: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive


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    PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L 92cs-3374i RFL1N08L RFL1N10L RFP2N08L RFP2N10L

    RFP8N18L

    Abstract: RFM8N18L TA9535 RFP8N20L RCA 518 rca 519 RFM8N20L RFP8M20L
    Text: Logic-Level Power MOSFETs_ RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L F ile N u m b e r 15114 N-Channel Logic Level Power Field-Effect Transistors L2 FET 8 A, 180 V and 200 V rDs(on): 0.5fi Features: • Design optim ized fo r 5 volt gate drive


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    PDF RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L 92CS-3374I RFM8N18L RFM8N20L RFP8N18L RFP8M20L 8N20L. TA9535 RCA 518 rca 519

    RFL2N05L

    Abstract: TA9520 RFL2N06L RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4
    Text: 3875081 G E' S O L I D STATECI Logic-Level Power MOSFETs DE | 3 Û 7 5 D Û 1 E I di T -3 7 -0 ? _ RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L F ile N u m b e r 1560 Power Logic Level MOSFETs T E R M IN A L D IA G R A M


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    PDF lfl43b T-37-0" RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L 92CS-33T4) RFL2N05L RFL2N06L S2CS-38I73 TA9520 RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


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    PDF 3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530

    IGBT 20N50

    Abstract: 20n50 20N50A RCP20N40 20n40 RCH20N50A RCH20N40A RCP20N50 20N50 HARRIS DIODE 25PH 500
    Text: Insulated-Gate Bipolar Transistors IGTH/IGTM/IGTP20N40 IGTH/IGTM/IGTP20N40A IGTH/IGTM/IGTP20N50 IGTH/IGTM/IGTP20N50A File Number 2174 TE R M IN A L DIAGRAM N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 20 A, 400 V and 500 V


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    PDF IGTH/IGTM/IGTP20N40 IGTH/IGTM/IGTP20N50 IGTH/IGTM/IGTP20N40A IGTH/IGTM/IGTP20N50A RCH20N40, RCH20N40A, RCH20M50. RCH20N50A, RCP20N40, RCP20N40A, IGBT 20N50 20n50 20N50A RCP20N40 20n40 RCH20N50A RCH20N40A RCP20N50 20N50 HARRIS DIODE 25PH 500

    RFP2N15L

    Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
    Text: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits


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    PDF RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L 92CS-337 RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12

    10N50A

    Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
    Text: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode


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    PDF IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD IGTH10N50AD 2CS-42 10N50A 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D

    RFL1N20L

    Abstract: RFP2N20L RFL1N18L RFP2N18L
    Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET


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    PDF 307SG01 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L RFL1N18L RFL1N20L RFP2N18L