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    f3055l

    Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. TB334 f3055l f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE PDF

    f3055l

    Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. f3055l FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A PDF

    f3055l

    Abstract: No abstract text available
    Text: RFD3055LE, RFD3055LESM Data Sheet N-Channel Logic Level Power MOSFET 60V, 11A, 107 mΩ These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		RFD3055LE, RFD3055LESM TA49158. RFD3055LESM f3055l PDF

    3055L

    Abstract: TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334
    Text: RFT3055LE Data Sheet August 1999 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET • 2.0A, 60V • rDS ON = 0.150Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve


    Original     		RFT3055LE TA49158. TB334, OT-223 3055L TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 PDF

    f3055l

    Abstract: FP3055LE f3055 RFP3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE f3055l FP3055LE f3055 RFP3055LE PDF

    3055l

    Abstract: 3055LD AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 TA49158
    Text: RFT3055LE Data Sheet Title FT3 5LE bt 0A, V, 50 m, 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET Features This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		RFT3055LE TA49158. TB334, 3055l 3055LD AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 TA49158 PDF

    f3055l

    Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
    Text: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE O-220AB O-251AA RFP3055LE 1e-30 06e-3 f3055l FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE PDF

    3055L

    Abstract: 3055LD spice model dc motor AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 6428 n-channel
    Text: RFT3055LE Data Sheet January 2002 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET Features • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    Original     		RFT3055LE 3055L 3055LD spice model dc motor AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 6428 n-channel PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    3055L transistor

    Abstract: Mosfet Sot223
    Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,


    Original     		RFT3055LE TA49158. RFT3055LE OT-223 330mm EIA-481 3055L transistor Mosfet Sot223 PDF

    FP3055LE

    Abstract: f3055l
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. FP3055LE f3055l PDF

    F3055L

    Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. F3055L FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334 PDF

    f3055l

    Abstract: FP3055LE
    Text: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFD3055LE, RFD3055LESM, RFP3055LE 150i2 1e-30 06e-3 22e-7) 48e-3 77e-5) 55e-3 f3055l FP3055LE PDF

    FT3055LE

    Abstract: No abstract text available
    Text: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		RFT3055LE 0-150i2 OT-223 330mm FT3055LE PDF

    3055L

    Abstract: TA49158
    Text: integrai RFT3055LE D ata S hee t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those ot LSI circuits, gives


    OCR Scan     		RFT3055LE TA49158. RFT3055LE AN7254 AN7260. 3055L TA49158 PDF

    f3055l

    Abstract: 3055LE fd3055l f3055 3055L FP3055LE fd3055le
    Text: m HARRIS U S E M I C O N D U C T O R U RFD3055LE, RFD3055LESM, 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC TO-220AB 1 2A , 60V DS ON : 0 .1 50S2 • 2 kV ESD P ro te c te d


    OCR Scan     		RFD3055LE, RFD3055LESM, O-220AB 06e-3 22e-7) 20e-5) 56e-3 f3055l 3055LE fd3055l f3055 3055L FP3055LE fd3055le PDF

    FT3055LE

    Abstract: 305SL
    Text: RFT3055LE in t e f s il D a ta S h e e t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    OCR Scan     		RFT3055LE TA49158. RFT3055LE AN7260. FT3055LE 305SL PDF