16N03
Abstract: No abstract text available
Text: RFD16N03L, RFD16N03LSM Data Sheet Title FD1 03L D16 3LS bt A, V, 22 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA April 1999 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using
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RFD16N03L,
RFD16N03LSM
16N03
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FP42N03L
Abstract: f42n03l F42N03 RF1S42N03LSM RFP42N03L fp42n03 TA49030 AN9321 AN9322 RF1S42N03LSM9A
Text: RFP42N03L, RF1S42N03LSM Data Sheet 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
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RFP42N03L,
RF1S42N03LSM
FP42N03L
f42n03l
F42N03
RF1S42N03LSM
RFP42N03L
fp42n03
TA49030
AN9321
AN9322
RF1S42N03LSM9A
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16n03l
Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L
Text: RFD16N03L, RFD16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model
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RFD16N03L,
RFD16N03LSM
O-251AA
O-252AA
RFD16N03L
RFD16N03LSM
1e-30
95e-4
92e-3
29e-5)
16n03l
16N03
RFD16N03LSM9A
TA49030
AN7254
AN7260
AN9321
AN9322
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16N03
Abstract: TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
Text: RFD16N03L, RFD16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
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RFD16N03L,
RFD16N03LSM
TA49030.
16N03
TA49030
16N03L
AN7254
AN9321
AN9322
RFD16N03L
RFD16N03LSM
RFD16N03LSM9A
TB334
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16N03
Abstract: 16N03L TA49030 AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
Text: RFD16N03L, RFD16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
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PDF
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RFD16N03L,
RFD16N03LSM
16N03
16N03L
TA49030
AN7254
AN9321
AN9322
RFD16N03L
RFD16N03LSM
RFD16N03LSM9A
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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FP45N03L
Abstract: F45N03L fp45n03 RFP45N03L RF1S45N03LSM TA49030 F45N03 relay 24v 30a AN7254 AN7260
Text: RFP45N03L, RF1S45N03L, RF1S45N03LSM S E M I C O N D U C T O R 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 45A, 30V SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model
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RFP45N03L,
RF1S45N03L,
RF1S45N03LSM
O-220AB
O-262AA
RF1S45N03LSM
1e-30
95e-4
FP45N03L
F45N03L
fp45n03
RFP45N03L
TA49030
F45N03
relay 24v 30a
AN7254
AN7260
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f42n03l
Abstract: F42N03 FP42N03L fp42n03 RF1S42N03L RF1S42N03LSM RFP42N03L TA49030 AN9321 AN9322
Text: RFP42N03L, RF1S42N03L, RF1S42N03LSM S E M I C O N D U C T O R 42A, 30V, 0.025Ω, N-Channel Logic Level Power MOSFETs March 1997 Features Description • 42A, 30V The RFP42N03L, RF1S42N03L, and RF1S42N03LSM are N-Channel power MOSFETs manufactured using the
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RFP42N03L,
RF1S42N03L,
RF1S42N03LSM
RF1S42N03LSM
1-800-4-HARRIS
f42n03l
F42N03
FP42N03L
fp42n03
RF1S42N03L
RFP42N03L
TA49030
AN9321
AN9322
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FP45N03L
Abstract: fp45n03 f45n03l fp45n RFP45N03L N03l TA49030 F45N03 N03LS bvdss
Text: [ /Title RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M /Subject (45A, 30V, 0.022 Ohm, RFP45N03L, RF1S45N03L, RF1S45N03LSM Semiconductor 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A, 30V • Peak Current vs Pulse Width Curve
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RFP45
RF1S45
N03LS
RFP45N03L,
RF1S45N03L,
RF1S45N03LSM
1e-30
95e-4
82e-3
FP45N03L
fp45n03
f45n03l
fp45n
RFP45N03L
N03l
TA49030
F45N03
N03LS
bvdss
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16n03l
Abstract: No abstract text available
Text: interrii RFD16N03L, RFD16N03LSM D a ta S h e e t 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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RFD16N03L,
RFD16N03LSM
circuit60
RFD16N03LSM
AN7254
AN7260.
16n03l
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16N03LS
Abstract: 16n03l 9312v 03LSM 16N03
Text: RFD16N03L, RFD16N03LSM iU HARRIS U U S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30 V • JE D EC T O -251A A r DS ON = 0 . 0 2 2 » • Temperature Compensating PSPICE Model
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RFD16N03L,
RFD16N03LSM
-251A
-252A
RFD16N03L
RFD16N03LSM
61e-13
06e-3
05e-3
57e-6
16N03LS
16n03l
9312v
03LSM
16N03
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Untitled
Abstract: No abstract text available
Text: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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OCR Scan
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RFD16N03L,
RFD16N03LSM
96e-9
1e-30
95e-4
92e-3
29e-5)
03e-3
45e-5)
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f42n03l
Abstract: No abstract text available
Text: ? *3 2 S RFP42N03L, RF1S42N03L, RF1S42N03LSM 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 42A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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RFP42N03L,
RF1S42N03L,
RF1S42N03LSM
TA49030.
0-025i2
Tem96e-9
1e-30
95e-4
82e-3
17e-5)
f42n03l
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f45n03l
Abstract: FP45N03L
Text: ? *3 2 S RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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PDF
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RFP45N03L,
RF1S45N03L,
RF1S45N03LSM
TA49030.
Temperat96e-9
1e-30
95e-4
82e-3
17e-5)
03e-3
f45n03l
FP45N03L
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