sem 2105
Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7411
FSL9110R4
-100V,
sem 2105
2E12
FSL9110R4
JANSR2N7411
IC SEM 2105
sem 2106
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Untitled
Abstract: No abstract text available
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7411
FSL9110R4
-100V,
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2E12
Abstract: FSL9110D FSL9110R
Text: S E M I C O N D U C T O R FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL9110D,
FSL9110R
-100V,
1-800-4-HARRIS
2E12
FSL9110D
FSL9110R
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2E12
Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,
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JANSR2N7411
FSL9110R4
-100V,
R2N74
2E12
FSL9110R4
JANSR2N7411
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL9110D,
FSL9110R
-100V,
MIL-STD-750,
MIL-S-19500,
500ms;
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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Untitled
Abstract: No abstract text available
Text: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSL9110D,
FSL9110R
-100V,
36MeV/mg/cm2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSL9110R4
JANSR2N7411
-100V,
MIL-STD-750,
MIL-S-19500,
500ms;
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IC SEM 2105
Abstract: No abstract text available
Text: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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FSL9110R4
-100V,
1-30S2
JANSR2N7411
O-205AF
254mm)
IC SEM 2105
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AC 151 rIV equivalent
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R FSL9110D, FSL9110R " • M ■ W » ■ Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features Description • 2.5A, -100V, r[js ON = 1-30i2 T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r
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FSL9110D,
FSL9110R
-100V,
1-30i2
1-800-4-HARRIS
AC 151 rIV equivalent
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"MOSFET A3
Abstract: TC320
Text: gs H a r r i s S E M I C O N D U C T O R FSL9110D, FSL9110R m ' a a 1 a “ a Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL9110D,
FSL9110R
1-800-4-HARRIS
"MOSFET A3
TC320
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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Sylvan58MC
09A001-00
66X0003-001
50746A
68X0003
68X0003-001
T-E0137
93B3-3
93B3-4
st178
diode E1110
CK705
ecg semiconductor replacement guide
CS1237
ME1120
TE1088
1N942
1N733A
Delco DTG-110B transistor
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