T6 MARKING Search Results

UDFN-8

Abstract: marking T6
Contextual Info: SEMICONDUCTOR PF0633UDF8 MARKING SPECIFICATION UDFN-8 PACKAGE 1. Marking method Laser Marking T6 1 No. 0A 2. Marking 2 Item Marking Description Device Mark T6 PF0633UDF8 * Lot No. 0A 2007. 1st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method

t6 marking sot23

Abstract: BSS63 t6 sot23 marking T6
Contextual Info: SEMICONDUCTOR BSS63 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 T6 1 2 Item Marking Description Device Mark T6 BSS63 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: PRELIMINARY M IC ^ C a iü lN I MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K, 64K x 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM SYNCHRONOUS SRAM MODULE 256KB/512KB, 3.3V, PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES • • • • PIN ASSIGNMENT Front View

E309

Abstract: EEx ia IIC T6
Contextual Info: <& Marquage ATEX II 1 G/D EEx ia IIC T6 selon directive 9 4 /9 /C E blanc/white P tIO O o h m s C L A — rouge/red rouge/red Cable isolated PTFE/Cooper Braid/PTFE <&\\ ATEX marking 1 G/D EEx ia IIC T6 as per 9 4 /9 /C E directive Temperature d utilisation/Temperature Range :

Contextual Info: T6 Vishay Sfernice 1/4” Multi-Turn Fully Sealed Container Cermet Trimmers FEATURES • • • • • • • • • • • • Due to their square shape and small size 6.8 x 6.8 x 5mm , the multi-turn trimmers of the T6 series are ideally suited for PCB

72T4

Abstract: 4118 sram
Contextual Info: PRELIMINARY |\A |^ E a r ~ |S | I MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K, 64K X 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS 32K, 64K x 72 SRAM o +3.3V SUPPLY, FULLY REGISTERED INPUTS, OUTPUTS AND BURST COUNTER n A A il H I lA n ill r- o K A M IV IU IJU Lt FEATURES

PTB 00 ATEX 3117

Abstract: GHG43 EX-88 Ex-87 PTB 99 ATEX 3117 PTB No. Ex-87.B.2016U crouse-hinds 10 GHG432 ATEX 3117 ddto
Contextual Info: 4C GHG43 Series Control Stations Nonmetallic or 316L Stainless Steel Corrosion Resistant UL/cUL listed Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zones 1 and 2, A Ex de IIB + H2 T6 Cl. II, Div. 1, Groups E, F, G (cUL) PTB ATEX CERTIFIED 3117 Ex de IIC, T6,

pm84b

Abstract: pm84c PM84a
Contextual Info: T6 Vishay Sfernice 1/4” Multi-Turn Fully Sealed Container Cermet Trimmers FEATURES • • • • • • • • • • • • Due to their square shape and small size 6.8 x 6.8 x 5mm , the multi-turn trimmers of the T6 series are ideally suited for PCB

Contextual Info: T6 Vishay Sfernice 1/4” Multi-Turn Fully Sealed Container Cermet Trimmers FEATURES • • • • • • • • • • • • Due to their square shape and small size 6.8 x 6.8 x 5 mm , the multi-turn trimmers of the T6 series are ideally suited for PCB

KP120

Abstract: tle4921-5u TLE4941C 4100E KTY11-6 TLE4913 TLE4905G TLE4923 MARKING T5 TLE4905
Contextual Info: List of Ordering Codes in Alphanumerical Order Ordering Code Type Q62705-K128 KTY16-6 Q62705-K245 KTY11-5 T5 376 Q62705-K246 KTY11-6 T6 376 Q62705-K247 KTY11-7 T7 376 Q62705-K249 KTY13-5 T5 376 Q62705-K250 KTY13-6 T6 376 Q62705-K251 KTY13-7 T7 376 Q62705-K258

PM84A

Abstract: T6ZB 106M MIL-R-22097 PM84D 101005 pm84b
Contextual Info: T6 Vishay Sfernice 1/4” Multiturn Fully Sealed Container Cermet Trimmers FEATURES • • • • • • • • • • • • Due to their square shape and small size 6.8 x 6.8 x 5mm , the multiturn trimmers of the T6 series are ideally suited for PCB use, enabling high density board

Contextual Info: PRELIMINARY |m ir " C a r n |M I iib n w iii MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K 64K x 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM SYNCHRONOUS A n A R j i H iin r M OnAM MUL/U Lrt- +3.3V s u p p l y , f u l l y r e g is t e r e d INPUTS, OUTPUTS AND BURST COUNTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit

DIODE T4 marking

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits

DIODE T4 marking

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit

Contextual Info: SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance + - MARKING: T6,T4

T4 SOD-123

Abstract: diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123
Contextual Info: SOD-123 Plastic-Encapsulate Diode BAV16W/1N4148W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T6,T4

ETX-7111

Abstract: CXA3003BR-T6 TCX04 cell phone jammer cell phone jammer circuit Sony Semiconductor t6 C0806 CXA3003BR RC-1009B direct digital synthesizer for phone Jammer
Contextual Info: Messrs. M l Date of Issue 1998. 1.21 Issued No. 9801007 SHIPMENT SPECIFICATION Product Name CXA3003BR-T6 [Function] Baseband analog processing IC for dual-mode _ CDMA-FM cellular phone_ Receipt Stamp SONY CORPORATION Semiconductor Company

DIODE T4 marking

Abstract: T4 SOD-123 marking SOD-123 MS SOD-123 1N4148w DIODE T4 T4 DIODE IR225
Contextual Info: Formosa MS SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM 100 V 75 V VR RMS 53 V Forward Continuous Current

Contextual Info: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.BASE 2.EMITTER 3.COLLECTOR T6 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e|2=13 dB typ. (@ f = 1 GHz)

OCS2000-M1K-N2

Abstract: C110 H160
Contextual Info: OCS2000-M1K-N2 Reflection light beam switch, NAMUR OCS2000-M1K-N2 with terminal compartment ! Detection range up to 2 m ! ATEX-approval for zone 1 ! Intrinsically safe, EEx ia IIC T6 ! Light/dark ON, programmable ! Glare protected with polarisation filter

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

1SV270

Abstract: 470MHZ
Contextual Info: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN FEATURES High capacitance ratio: C1V/C4V = 2.0 Typ. 1 Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28Ω (Typ.) Top View