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    Untitled

    Abstract: No abstract text available
    Text: PD64MX6408 XXX D2X, PD128MX6416 (XXX) D2X SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • · · · · · · · · · · · · 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2700, PC3200 Utilizes DDR333 and DDR400 DDR SDRAM components


    Original     		PDF PD64MX6408 PD128MX6416 PC2700, PC3200 DDR333 DDR400 512MB 64MX64) 128MX64) 8125us

    DD256M

    Abstract: T37Z TSOP 66 Package thermal resistance
    Text: 1 GigaBit Stacked DDR1 SDRAM DD54E, DD54ER 256M x 4 Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and


    Original     		PDF DD54E, DD54ER DD54ER) DDR400) DD256M42U3BA DD54E 3887x132 DD54E) DD256M T37Z TSOP 66 Package thermal resistance

    T37Z

    Abstract: DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps
    Text: 1 GigaBit Stacked DDR1 SDRAM 128M x 8 DD55E, DD55ER Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and


    Original     		PDF DD55E, DD55ER DD54ER) DDR400) DD128M82U3BA DD55E 3887x132 DD55E) T37Z DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps

    DM 024

    Abstract: T37z DDR266 DDR333 WV3EG265M72EFSU-D4 512mb sodimm pc2700 200 pin samsung
    Text: White Electronic Designs WV3EG265M72EFSU-D4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA FEATURES DESCRIPTION Unbuffered 200-pin SO-DIMM , small-outline, dualin-line module The WV3EG265M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR


    Original     		PDF WV3EG265M72EFSU-D4 2x64Mx72 200-pin WV3EG265M72EFSU 512Mb 64Mx8 PC-2100, PC-2700 133MHz, DM 024 T37z DDR266 DDR333 WV3EG265M72EFSU-D4 512mb sodimm pc2700 200 pin samsung

    R9522

    Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
    Text: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1


    OCR Scan     		PDF S773ETS IRF9522 IRF9523 R9522 R9523 T-37-Z5 O-220 -100V R9522 R9523 G-D-S TO-92

    ZVP 210

    Abstract: ZVP2210B zetex zvp ZVP P-channel
    Text: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF ZVP2210B* ZVP2210L O-220 ZVP 210 ZVP2210B zetex zvp ZVP P-channel

    Q533

    Abstract: G307 TH 2053.3 ZVP2206L
    Text: "tS PLESSEY SENICOND/DISCRETE 7 2 2 0 5 3 3 P L E S S E Y D E ^ 7 2 5 Q533 95D S E M I C O N D / D I S C R E T E T P-channel enhancement mode vertical D M O S FET ' □GGSflDl 05601 37'25 ZVP2206 FEATURES • Com pact geometry • Fast sw itching speeds •


    OCR Scan     		PDF ZVP2206 ZVP2206B* ZVP2206L 7gS0S33 G-307 T-37-Z5 G-308 Q533 G307 TH 2053.3