LT1ED90A
Abstract: No abstract text available
Text: PREPARED BY: DATE: JJ&,~ -2 ; 97 -y-. 3 _._ 1‘I&j&.:,_ :-:fi-.-: ii -I s-a :,.-a ;:,+;SPEC.No. -_ ti~~~t34-. PALa APPROVED BY: DATE: / / ELECTROMC COMPONENTS GROUP SHARP CORPORATION DMSION: Opto-Electronic Devices Division SPECIFICATION DEVICE SPECIFICATION
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LT1ED90A
LT1ED90A
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74hct34
Abstract: B694 ij98 MM54HCT34 MM74HCT34
Text: January 1988 Semiconductor MM54HCT34/MM74HCT34 Non-Inverter General Description Features The M M 54H C T34/74H C T34 are logic fu n ctio ns fabricated by using advanced silicon-gate CM OS te ch n olo gy w hich provides th e inherent b enefits o f C M OS - low quiescent
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MM54HCT34/MM74HCT34
MM54HCT34/74HCT34
DM54LS/74LS
MM54HCT/MM74HCT
74hct34
B694
ij98
MM54HCT34
MM74HCT34
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D ISCR ETE bTE D IAPX bbS3^31 DD2bbb3 T34 BYV95A; B; C J \ _ AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes. They are
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BYV95A;
BYV95A
bb53R31
bb53S31
002bbb^
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0C340
Abstract: 0L3492N-3 0CM243
Text: PRODUCT LINE QLD2203 -[ b OLD221Q PRODUCT UNE PHOTOSENSORS Silicon Planer Photodiodes | 0D44L Silicon NPN Epitaxial Planer Phototransistors T34 T35L T36 T55L Digital Output Photodetectors 0IP101 PRODUCT LINE PHOTOCOUPLERS j Photocouplers -[ 0C340 QC360 0C701
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QLD2203
OLD221Q
0D44L
0IP101
0C340
QC360
0C701
0CS30
0CS31
OCS32
0L3492N-3
0CM243
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BYW30-50
Abstract: BYW30-50U BYW30
Text: BYW30 SERIES PHILIPS SbE INTERNATIONAL D • 711002b 00415b4 T34 « P H I N ^ 1 -0 3 -1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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BYW30
711002b
0D41Sbi|
BYW30â
711Q6Eb
G041S71
m1523
m1524
m0728
BYW30-50
BYW30-50U
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UFN423
Abstract: FN421 FN423 FN420 ufn 423
Text: TS 1 F 1 T34?TbB DDlGt7H S UNITRODE CORP 9347963 U NI TRÖ DE CORP 92D 10672 D ^ "K POWER MOSFET TRANSISTORS [“ 500 Volt, 3.0 Ohm N-Channel UFN422 UFN423 FEATURES • Fast Sw itching • Low Drive Current • Ease of Paralleling « No Second Breakdow n DESCRIPTION
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UFN422
UFN423
UFN420
FN422
756VOSS
UFN423
FN421
FN423
FN420
ufn 423
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Untitled
Abstract: No abstract text available
Text: H IT A C H I/ OPTOELECTRONICS 54E J> m MM^bSGS 0012075 HL8315E T34 H H I T M G aAIAs LD Description The HL8315E is a high-power 0.8 |jm band GaAlAs laser diode with a double heterojunction structure. It is suitable as a light source for optical disk memories and various other types of optical equipment.
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HL8315E
HL8315E
T-41-05
G15D7Ã
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T34 rectifier
Abstract: BYV95A "Rectifier Tube" 678 marking AAX
Text: N AMER PHILIPS/DISCRETE bTE ]> • bbSB'm DDSbbba I T34 M A P X BYV95A; B; C _ AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes. T h e y are intended f o r television and in d u stria l applications, such as switched-m ode p o w e r supplies, scan
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BYV95A;
byv95a
7Z82624
T34 rectifier
"Rectifier Tube" 678
marking AAX
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DIODE 1N4001 SMD
Abstract: half bridge driver S12 MARKING DIODE AEB02350 AEP02349 EF12 P-DSO-28-6 yS34 s34 power diode DIODE S34
Text: SIE M E N S 1-A Q uad-H B D Quad-Half-Bridge Driver TLE 4208 O verview Features • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optim ized for DC motor m anagem ent applications Very low current consum ption
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067007-A9335
P-DSO-28-6
AED02310
GPS05123
DIODE 1N4001 SMD
half bridge driver
S12 MARKING DIODE
AEB02350
AEP02349
EF12
P-DSO-28-6
yS34
s34 power diode
DIODE S34
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Photo Relays
Abstract: OCS37 OLD122 OCS32 OLD222 OC40 ocm220
Text: I PRODUCT LINE OLD122 LIGHT EMITTING DIODES OLD123 OLD124 OLD125 OLD127 OLD222 OLD222H OLD223 OLD224 OLD225 OLD232 OLD232-2 - OLD234 OLD2202 OLD22Û3 4 •P R O D U C T L IN E« PHOTO SENSORS Silicon PIN Photodiodes for Optical Communications " OD43L
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OLD122
OLD123
OLD124
OLD125
OLD127
OLD222
OLD222H
OLD223
OLD224
OLD225
Photo Relays
OCS37
OCS32
OC40
ocm220
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diode marking t34
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 15-020 R Ordering Code Pin Configuration
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Q62702-D1264
Q62702-D1272
Q62702-D1281
Q62702-D1290
EHA07009
fl23Sb05
BAT15-050
BAT15-020
BAT15-090
diode marking t34
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1SS265
Abstract: diode marking t34
Text: Diode, band switching, leaded 1SS265 Dimensions Units : mm These ultra small diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 .4 ± 0 .l Features M- -+ • available in USD package •
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1SS265
DD1S44T
1SS265
diode marking t34
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1SS227
Abstract: DIODE 1SS227
Text: T? T O S H I B A -CDISCRETE/OPTOl 9097250 — TOSHIBA — — D IS C R E TE/O PTO - : — — 1SS227 J • •/. DËfl^cmasD oomaBT 4 67 C 09339 D - O f * Silicon Epitaxial. Planar Type Diode Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 4.2MAX.
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55MAX.
DDT34P
-1SS227
1SS227
DIODE 1SS227
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Untitled
Abstract: No abstract text available
Text: 37bflSE2 0Ü1ÔS34 Ibi M P L S B w GEC PLESSEY SEMICONDUCTORS DC2020/23, DC2171H/72H & DC2600 Series MICROSTRIP PIN DIODES DESCRIPTION APPLICATIONS DC2020/DC2600 Series are a range of broadband microstrip PIN diodes. Both switching modules and passive limiters are available. In the passive limiters the chip and
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37bflSE2
DC2020/23,
DC2171H/72H
DC2600
DC2020/DC2600
DC2023
DC2620
DC2622
DC2623
DC2624D
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marking t17
Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Text: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3
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OT-89A
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
DZ89-C6V2
DZ89-C6V8
DZ89-C7V5
DZ89-C8V2
marking t17
ZENER 89A
T29 marking
DZ89-C51
T20 MARKING
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marking T28
Abstract: T31 Marking sot regulator marking T34 T33 Marking sot regulator
Text: ftlAIEf SURFACE MOUNT DUAL ZENER DIODES 1 WATT DUAL ZENER DIODES / SOT-89 Type Number Marking . V l l l i l l c l i =} | HU OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C Voltage Range Maximum Zener . Impedance Z Z T a t lz r Typical Temperature Coefficient
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OT-89
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
OZ89-C6V2
DZ89-C6V8
DZ89-C7V5
DZ89-C8V2
marking T28
T31 Marking sot regulator
marking T34
T33 Marking sot regulator
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FU-01LD-N
Abstract: FU-27LD
Text: MITSUBISHI DISCRETE SC blE » • bSM'îflS'l GOlHflDB TTñ ■ MITS FU-01LD-N (0.85), FU-27LD (0.85) 0.85 n m LD Module for Multimode Fiber LD Module types FU-01LD-N (0.85) and FU27LD (0.85) contain AlGaAs LDs (Laser diodes) for 0.85/zm band and are used as light source
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FU-01LD-N
FU-27LD
85/zm
85jum
FU-01LD-N
FU-27LDC0
FU-27LD
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T34 diode
Abstract: BYW99P-200 BYW99PI-200
Text: SG S -TU O M SO N BYW99P/PI IILO HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ VERY LOW FORWARD LOSSES . ■ ■ ■ ai — ►H NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION T O P 3 I:
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BYW99P/PI
BYW99P-200
BYW99PI-200
T34 diode
BYW99P-200
BYW99PI-200
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74hct34
Abstract: 74hc34 74LS34 74hc32 GD74HC34 74HC GD54HC34 HCT34
Text: GD54/74HC34, GD54/74HCT34 HEX BUFFERS General Description These devices are identical in pinout to the 5 4 /7 4 L S 3 4 . They contain six independent noninver ting buffers. Especially, the HCT 3 4 can be used for interfacing between TTL and NM O S compon
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GD54/74HC34,
GD54/74HCT34
54/74LS34.
20/iA
GD74HCT34
GD54HCT34
74hct34
74hc34
74LS34
74hc32
GD74HC34
74HC
GD54HC34
HCT34
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FU-01LD-N
Abstract: FU-27LD
Text: MITSUBISHI DISCRETE SC blE D • bEMTflS1! 0G14flü3 TTñ « M I T S FU-01LD-N (0.85), FU-27LD (0.85) 0.85 |i m LD Module for Multimode Fiber LD Module types FU -01LD -N (0.85) and FU27LD (0.85) contain AlGaAs LDs (Laser diodes) for 0.85/im band and are used as light source
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0G14flD3
FU-01LD-N
FU-27LD
85/im
FU-01LD-N
FU-27LDC0
FU-27LD
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DZ89-C91
Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Text: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £
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-C100
-C120
-C180
OT-89A
DZ89-C43
DZ89-C47
DZ89-C51
DZ89-C56
DZ89-C62
DZ89-C68
DZ89-C91
c3v9
C82 diode
DZ89-C3V9
DZ89-C4V3
DZ89-C4V7
DZ89-C5V1
DZ89-C5V6
DZ89-C6V2
T29 marking
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OLD122
Abstract: OC340 OD121 357 photo od43l T34L OC40 1r1h
Text: OUTLINE DIMENSIONS Unit : mm 1. Light-Emitting Diode OLD122 O L D 123 05.5*“ N - — •- H 04.6iat * ► Flat glass TO-18 stem 2-00.45 r I 2.54 1. Cathode 2. Anode (case) 108 -•OUTLINE DIMENSIONS# O LD 125 O LD 124 N 0 3 .0 * ° 20 — -►
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OLD122
C987654321C
OLD122
OC340
OD121
357 photo
od43l
T34L
OC40
1r1h
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T34 diode
Abstract: DIODE S34 s34 diode
Text: SIEM ENS 1 -A Q uad-H B D Quad-Half-Bridge Driver TLE 4208 Overview Features • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption
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235bQ5
235b05
Q103S77
P-DSO-28-6
GPS05123
T34 diode
DIODE S34
s34 diode
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T34 rectifier
Abstract: No abstract text available
Text: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and
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DDEbT13
1N5059
7Z88032
bb53531
002b51fl
002b515
T34 rectifier
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