transistor T1J
Abstract: T1J marking
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
|
Original
|
NESG2101M05
NESG2101M05
transistor T1J
T1J marking
|
PDF
|
t06 marking sot23
Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W
|
Original
|
2PA1576Q
SC-70
BC808W
OT323
2PA1576R
BC808-16
2PA1576S
BC808-16W
t06 marking sot23
BC857 3ft
marking 6Ct SOT23
SOT89 marking cec
marking da sot89
MARKING BL SOT89
SOT23 "Marking Code" t04
SOT89 MARKING CODE
marking t04 sot23
marking 1G SOT23
|
PDF
|
transistor T1J
Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
|
Original
|
NESG2101M05
NESG2101M05-A
NESG2101M05-TERISTICS
PU10190EJ02V0DS
transistor T1J
transistor T1J 4pin
M05 MARKING
|
PDF
|
nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
|
Original
|
NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
|
PDF
|
nesg2101m05-t1-a
Abstract: NESG2101M05-A
Text: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •
|
Original
|
NESG2101M05
R09DS0036EJ0300
NESG2101M05
PU10190EJ02V0DS
nesg2101m05-t1-a
NESG2101M05-A
|
PDF
|
transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
|
Original
|
NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
|
PDF
|
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
|
PDF
|
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
|
Original
|
NESG2101M05
R09DS0036EJ0300
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
|
Original
|
NESG2101M05
R09DS0036EJ0300
|
PDF
|
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
PDF
|
transistor T1J
Abstract: NESG2101M05-T1 NEC NESG2101M05 NESG2101M05 MICROWAVE TRANSISTOR T1J marking
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PU10190EJ02V0DS
NESG2101M05
transistor T1J
NESG2101M05-T1
NEC NESG2101M05
NESG2101M05
MICROWAVE TRANSISTOR
T1J marking
|
PDF
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU SRK7002LT1 FM1200-M+ Small Signal MOSFET Silicon N-Channel 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers
|
Original
|
OD-123+
FM120-M+
SRK7002LTHRU
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
|
PDF
|
|
|
ADM1032 D
Abstract: ADM1032
Text: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual-channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can
|
Original
|
ADM1032
ADM1032
2N3904/06)
ADM1032/D
ADM1032 D
|
PDF
|
ADM1032
Abstract: No abstract text available
Text: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual-channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can
|
Original
|
ADM1032
ADM1032
2N3904/06)
ADM1032/D
|
PDF
|
1032AR
Abstract: SOT-23 marking t1c ADM1032ARZ ADM1032 transistor T1J 2N3906 1032AR01 marking code 8 lead soic-n package analog devices
Text: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual−channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can
|
Original
|
ADM1032
ADM1032
2N3904/06)
ADM1032/D
1032AR
SOT-23 marking t1c
ADM1032ARZ
transistor T1J
2N3906
1032AR01
marking code 8 lead soic-n package analog devices
|
PDF
|
1032ar
Abstract: T1J marking diode SOT-23 marking t1c ADM1032-2 1032ar01 1023A ADM1032
Text: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual-channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can
|
Original
|
ADM1032
ADM1032
2N3904/06)
ADM1032/D
1032ar
T1J marking diode
SOT-23 marking t1c
ADM1032-2
1032ar01
1023A
|
PDF
|
1032AR
Abstract: 0250C SOT23 NPN marking 4d T1C MSOP-8 ADM1032
Text: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual−channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can
|
Original
|
ADM1032
ADM1032
2N3904/06)
ADM1032/D
1032AR
0250C
SOT23 NPN marking 4d
T1C MSOP-8
|
PDF
|
FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
|
PDF
|
nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
|
PDF
|
marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
|
OCR Scan
|
2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
|
PDF
|
transistor T1J
Abstract: T1J marking
Text: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching applications, primarily in portable
|
OCR Scan
|
OT323
PMST2369
PMST2369
OT323)
transistor T1J
T1J marking
|
PDF
|
JTs smd diode
Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
Text: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA
|
OCR Scan
|
1206G
JTs smd diode
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
smd transistor marking p3
12A p transistor smd
12A transistor smd
SMD TRANSISTOR 12a
smd transistor marking 1j
transistor smd sG
SMD TRANSISTOR MARKING P2
STTA1206D/DI/G
|
PDF
|