R09DS0036EJ0300 Search Results
R09DS0036EJ0300 Datasheets Context Search
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nesg2101m05-t1-a
Abstract: NESG2101M05-A
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NESG2101M05 R09DS0036EJ0300 NESG2101M05 PU10190EJ02V0DS nesg2101m05-t1-a NESG2101M05-A | |
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Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification |
Original |
NESG2101M05 R09DS0036EJ0300 | |
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Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification |
Original |
NESG2101M05 R09DS0036EJ0300 |