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    T17 PC Search Results

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    T17 PC Price and Stock

    AirBorn Inc WT17PC

    MOTORS & SOLENOIDS
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    DigiKey WT17PC Bulk 76
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    SOURIAU-SUNBANK MS27656T17B35PC

    Circular MIL Spec Connector
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MS27656T17B35PC 3
    • 1 $138.33
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    • 100 $117.99
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    Amphenol Corporation MS27467T17F26PC

    Circular MIL Spec Connector 26P Sz 17 Straight Plug Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MS27467T17F26PC 1
    • 1 $242.05
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    NXP Semiconductors MPC560SKIT176S

    Development Boards & Kits - Other Processors MPC560SKIT176S/HWONLY///BOARDS NO MARK
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    Mouser Electronics MPC560SKIT176S 1
    • 1 $506.96
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    Amphenol Corporation MS27467T17F35PC

    Circular MIL Spec Connector 55P Sz 17 Straight Plug Pin
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    Mouser Electronics MS27467T17F35PC
    • 1 $280.5
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    • 100 $250.59
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    T17 PC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CS12

    Abstract: CX16
    Text: -=> 产品总汇 >>其它传感器 >>其它传感器 - 霍尔传感器>>T17 霍尔传感器>>T17 系列霍尔传感器>>FT17 系列霍尔传感器>>FT17>>FT17-D10NH 浏览次数:10 -=> 产品图片 会员价: 欲知价格请登陆 主要技术参数 工作电压:


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    FT17-= FT17-D10NH 0-36V 100mA 5000Hz 0-250V 0-30V( 5-30V) 0-65V CS12 CX16 PDF

    CX16

    Abstract: CS12
    Text: -=> 产品总汇 >>其它传感器 >>FT17-D10NK >>其它传感器 - 霍尔传感器>>T17 霍尔传感器>>T17 系列霍尔传感器>>FT17 系列霍尔传感器>>FT17 浏览次数:25 -=> 产品图片 会员价: 欲知价格请登陆 主要技术参数 工作电压:


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    FT17-= FT17-D10NK 0-36V 100mA 5000Hz 0-250V 0-30V( 5-30V) 0-65V CX16 CS12 PDF

    CS12

    Abstract: CX16
    Text: -=> 产品总汇 >>其它传感器 >>其它传感器 - 霍尔传感器>>T17 霍尔传感器>>T17 系列霍尔传感器>>FT17 系列霍尔传感器>>FT17>>FT17-D10PH 浏览次数:5 -=> 产品图片 会员价: 欲知价格请登陆 主要技术参数 工作电压:


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    FT17-= FT17-D10PH 0-36V 100mA 5000Hz 0-250V 0-30V( 5-30V) 0-65V CS12 CX16 PDF

    CS12

    Abstract: CX16
    Text: -=> 产品总汇 >>其它传感器 >>其它传感器 - 霍尔传感器>>T17 霍尔传感器>>T17 系列霍尔传感器>>FT17 系列霍尔传感器>>FT17>>FT17-D10PK 浏览次数:8 -=> 产品图片 会员价: 欲知价格请登陆 主要技术参数 工作电压:


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    FT17-= FT17-D10PK 0-36V 100mA 5000Hz 0-250V 0-30V( 5-30V) 0-65V CS12 CX16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET - Draft SnapN 50 Ω 53QS101-273N3 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Compatible to IEC 60169-16, MIL-PRF-39012, CECC 22210 Documents Assembly instruction 53 T17 Material and plating


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    53QS101-273N3 MIL-PRF-39012, D-84526 PDF

    AD427

    Abstract: No abstract text available
    Text: b ME7 SES 004E775 T17 «NECE NEC NEC Electronics Inc. #iPD78002Y Family pPD78001 BY/002BY/P014Y 8-Bit, K-Series Microcontrollers General Purpose W ith I2C Bus Preliminary_ September 1993 Description Features The ¿(PD78001 BY, ¿/PD78002BY, and pPD78P014Y* are


    OCR Scan
    004E775 iPD78002Y pPD78001 BY/002BY/P014Y) PD78001 /PD78002BY, pPD78P014Y* /JPD78002Y pPD78002 JPD78P014Y AD427 PDF

    Transformer 500 volt to 24 a c 24 dc 240 ac volt

    Abstract: P575
    Text: C OMPUT ER PRDTS/ POWER T=IC D • 2313103 OOQD3bP T17 ■ CPR T ' 57' ° 5 SPECIFICATIONS All Specifications Typical at Nominal Line, Full Load and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS MED 300/500 SERIES Single, Dual and Triple Outputs ■


    OCR Scan
    00QD3bP T-S1-05 UL544 MED302 MED365 MED301 MED396 MED531 MED514 Transformer 500 volt to 24 a c 24 dc 240 ac volt P575 PDF

    transistor 6c x

    Abstract: T17 pc
    Text: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-020-105 PT204-6C/T17 ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189


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    DPT-020-105 PT204-6C/T17 22Lines) 500Pcs/1Bag6Bags/1Box 10Boxes/1Carton transistor 6c x T17 pc PDF

    Untitled

    Abstract: No abstract text available
    Text: Gas Discharge Tube: GMC Series 2-Electrode Φ11.8 x T17/ 17.5 mm Type  Features 1. RoHS & HF compliant 2. Rugged ceramic-metal construction 3. DC spark-over voltage: 230~2200V 4. Low capacitance 5. Agency recognition: UL / cUL 6. Operating temperature : -40℃ ~ +85℃


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    T17/17 R22BMB PDF

    EDL5132CBMA

    Abstract: b008m
    Text: PRELIMINARY DATA SHEET 512M bits Mobile RAM MCP 2 pcs of 256Mb components EDL5132CBMA 16M words x 32 bits Description Pin Configurations The EDL5132CBMA is a 512M bits Mobile RAM MCP (Multi Chip Package) organized as 4,194,304 words × 32 bits × 4 banks, 2 pieces of 256M bits Mobile RAM in


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    256Mb EDL5132CBMA EDL5132CBMA 90-ball M01E0107 E0490E30 b008m PDF

    nt5sv8m16fs-6k

    Abstract: Nanya NT5SV8M16FS NT5SV8M16FS NANYA Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FS-75BI NT5SV8M16FT NT5SV8M16FS-75B NT5SV8M16FT-6K
    Text: NT5SV8M16FS / NT5SV8M16FT 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6K/6KI PC133 (75B/75BI) 2 7.5 10 ns 3 6 7.5 ns • • • • • Single Pulsed RAS Interface


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    NT5SV8M16FS NT5SV8M16FT 128Mb PC166 PC133 75B/75BI) nt5sv8m16fs-6k Nanya NT5SV8M16FS NANYA Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FS-75BI NT5SV8M16FT NT5SV8M16FS-75B NT5SV8M16FT-6K PDF

    NT56V6610C0T-75

    Abstract: NT56V6610C0T-8A NT56V6610C0T NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 April, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


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    NT56V6610C0T NT56V6620C0T PC133 PC100 NT56V6610C0T 4Mx16) NT56V6610C0T-75 NT56V6610C0T-8A NT56V6610C0T-75B NT56V6610C0T-8B NT56V6620C0T PDF

    NT5SV8M16FS

    Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
    Text: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •


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    NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb PC166 PC133 NT5SV8M16FS Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K PDF

    NT56V6610C0T-8A

    Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


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    NT56V6610C0T NT56V6620C0T PC133 PC100 4Mx16) NT56V6610C0T-8A nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A PDF

    la7358

    Abstract: Reference sine wave s13 package SW21B
    Text: Ordering number : ENA0638 Monolithic Linear IC LA7358 For VCR SECAM Chroma Signal Processor Overview LA7358 is a VCR-use SECAM chroma signal processor. Function • 4.3MHz BPF • 1.1MHz BPF • Limiter • AGC in PB mode • 4-divide circuit • 4-fold circuit


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    ENA0638 LA7358 LA7358 A0638-17/17 Reference sine wave s13 package SW21B PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


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    MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3 PDF

    EM63A165TS-6G

    Abstract: EM63A165 EM63A165TS-7G MX16 EM63A165TS
    Text: EtronTech EM63A165 16Mega x 16 Synchronous DRAM SDRAM (Rev 1.2, Aug., 2007) Pin Assignment (Top View) Features • • • • • • • • • • • • Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation


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    EM63A165 16Mega 16-bit cycles/64ms 54-pin EM63A165TS-6G EM63A165 EM63A165TS-7G MX16 EM63A165TS PDF

    EM636165

    Abstract: No abstract text available
    Text: EtronTech EM636165 1Mega x 16 Synchronous DRAM SDRAM (Rev.3.2, Nov./2007) Features Fast access time: 4.5/5/5/5.5 ns Fast clock rate: 200/183/166/143 MHz Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank


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    EM636165 16-bit cycles/64ms 50-pin 60-ball, 1Mx16 60-Ball EM636165 PDF

    EM638165TS

    Abstract: COMMAND EM638165
    Text: EtronTech EM638165 4Mega x 16 Synchronous DRAM SDRAM (Rev 1.9, 04/2007) Features • • • • • • • • • • • • • Key Specifications Fast access time from clock: 4.5/5/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation


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    EM638165 16-bit cycles/64ms 54-pin 60-Ball, 4Mx16 60-Ball EM638165TS COMMAND EM638165 PDF

    sdram 1m x 4x 32

    Abstract: EM636165 EM636165TS
    Text: EtronTech EM636165 Industrial 1Mega x 16 Synchronous DRAM SDRAM (Rev.3.1, Jul/2007) Features Fast access time: 5/5.5 ns Fast clock rate: 166/143 MHz Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank Programmable Mode registers


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    EM636165 Jul/2007) 16-bit cycles/32ms 50-pin 60-ball, 1Mx16 60-Ball sdram 1m x 4x 32 EM636165 EM636165TS PDF

    6bx7

    Abstract: 6ax7 9t2 transistor EM636165GD-6 EM636165
    Text: EtronTech EM636165 1Mega x 16 Synchronous DRAM SDRAM (Rev. 1.0, 10/2004) Features • • • • • • • • • • • • • Fast access time: 5/5.5 ns Fast clock rate: 166/143 MHz Self refresh mode: standard and low power Internal pipelined architecture


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    EM636165 16-bit cycles/64ms 6bx7 6ax7 9t2 transistor EM636165GD-6 EM636165 PDF

    T431616D-5S

    Abstract: T431616E
    Text: tm TE CH T431616D/E SDRAM 512K x 16bit x 2Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank


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    T431616D/E 16bit 16-bit cycles/64ms 50-pin 60-ball, T431616D-5S T431616E PDF

    T4312816B

    Abstract: No abstract text available
    Text: tm TE CH T4312816B SDRAM 2M x 16bit x 4Banks Synchronous DRAM 8M x 16 SDRAM FEATURES GRNERAL DESCRIPTION • The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a


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    T4312816B 16bit T4312816B PDF

    lr transistor t7

    Abstract: Q 72 t5 T436416D
    Text: tm TE CH T436416D 4M x 16 SDRAM SDRAM 1M x 16bit x 4Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION • Fast access time from clock: 4.5/5/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank


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    T436416D 16bit 16-bit cycles/64ms 54-pin 60-Ball, T436416D lr transistor t7 Q 72 t5 PDF