Untitled
Abstract: No abstract text available
Text: SIEMENS ; SFM 4212 IRED T018PACKAGE Package Dimensions in rum FEATURES Maximum Ratings * InGaAsP/lnP-IRED * Emission Wavelength: 2"d Optical Window 1300 nm * Suitable for Bit Rates up to 50 Mbit/s * 200 Mbit/s with Appropriate Pulse Shaping of Modulation Current
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T018PACKAGE
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LF50
Abstract: No abstract text available
Text: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)
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fl23SbGS
DDi4b551
SFH4210
T018PA
LF50
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 4413 LOW POWER LASERDIODE IN T018PACKAGE P a c k a g e D im e n s io n s in m m 3 75 3 .2 5 150 1 1 .0 1.3 1 1" 0 0 .5 00 3 0 3 .7 0 3 .4 ^ I 1 57 1 37 M D .; LD [O l 0 I ¡A: E m ittin g F a ce t FEATURES Maximum Ratings • InGaAsP/lnP MCRW-Laser Diode
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T018PACKAGE
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH2210 TERNARY PIN PHOTODIODE T018PA C K A G E P relim in ary Data Sheet Package Dimensions in mm Chip Location OD o —j^ FEATURES Maximum Ratings * InGaAs/lnP PIN Photodiode * Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm * Suitable for Bit Rates up to 1.2 Gbit/s
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SFH2210
T018PA
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Untitled
Abstract: No abstract text available
Text: bOE D • ÔE35bOS 004b55b DSfl ■ SIEG SIEMENS AKTIENGESELLSCHAF SIEMENS SFH4413 LOW POWER LASERDIODE IN T018PACKAG E Package Dimensions in mm FEATURES Maximum Ratings • InGaAsP/lnP MCRW-Laser Diode • Emission Wavelength: 1300 nm Output power ratings refer to the total em itted power at front window.
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E35bOS
004b55b
SFH4413
T018PACKAG
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Untitled
Abstract: No abstract text available
Text: bOE I • 8235bOS 0041,544 33b B S I E 6 -7 SIEMENS SFH2213 SIEMENS AKTIENGESEL LSCHAF P a ck a g e Din-:— TERNARY PIN PHOTODIODE T018PACKAGE ;- FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode O p e ra tin g a n d Sto ra g e Tem peratu re R a n g e T0 P , T V r a .-4 0 ° to +85°C
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8235bOS
SFH2213
T018PACKAGE
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 2213 TERNARY PIN PHOTODIODE T018P A C K A G E FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode • Sensitive Receiver fo r the 2nd and 3rd W indow 1300 nm and 1500 nm • Suitable fo r Bit Rates up to 1.2 Gbit/s O peratin g and Storage T em perature Range (Top, Ts tg ) .- 4 0 ° to +85°C
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T018P
B23t3at
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 2212 INFRARED EMITTING DIODE T018PACKAGE P relim inary Data Sheet P a cka g e D im e n sio n s in mm C hip Loacation 1 95_ 1.65 0.35 Anode ¡zuriza? 04.80 0 4.55 0.25 I — V .J _; = f ~ / GND L-l8 42.4 1 27 Lead sp a cin g 'T 1 50 12 0 FEATURES
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T018PACKAGE
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Untitled
Abstract: No abstract text available
Text: TERNARY PIN PHOTODIODE T018PACKAGE FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode • Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm • Suitable for Bit Rates up to 1.2 Gbit/* • Low Junction Capacitance • Fast Switching Times
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T018PACKAGE
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Untitled
Abstract: No abstract text available
Text: SFH 2212 SIEMENS INFRARED EMITTING DIODE T018PA C K A G E Prelim in ary Data Sheet P a c k a g e D im e n sio n s in m m Chip Loacation 035 0 25 Anode I.J. 1 27 Lead spacing : ée L Cathode GND 24 " T 15.0 120 FEATURES M a x im u m R a tin g s • InGaAsP/lnP PIN Photodiode
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T018PA
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T018P
Abstract: ASX 12 D
Text: SIEMENS SFH 2213 TERNARY PIN PHOTODIODE T018P A C K A G E P a c k a g e D im e n s io n s in m m 0 0 50 0 0 40 . C athode + Anode GND C hip location FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode O peratin g and Storage Tem perature R ange T0P, Tg tg . -4 0 ° to + 85“ C
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T018P
ASX 12 D
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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fototransistor
Abstract: AFD3000 AFE2000 FPE100 fototransistor ir T0180 AFD1200 AFE5100
Text: ABORN ELECTRONICS S3E J> Special Devices OGTTblM DDDODSb bT^ H A B E -p¿S -07 FIBER OPTIC EMITTERS DESCRIPTION DEVICE units çonditlons WAVELENGTH POWER OUT FORWARD VOLTAGE nM Ip=50mA Volts Ip*50mA uW Ip=5QmA T i n r PACKAGE FACE TIME DRAWING numerical APERATURE
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0Q0005ki
If-50mA
IF-50niA
AFE2000
T0-18Window
AFE2100
T0-18Uindow
AFE3100
T0-18Plastic
AFE5100
fototransistor
AFD3000
FPE100
fototransistor ir
T0180
AFD1200
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