T0044D4 Search Results

IS28F010

Abstract: IS28F010-45PL
Contextual Info: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt

tdq4-M

Abstract: HP 2231 IS42S16128
Contextual Info: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

Contextual Info: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion

DDD0444

Contextual Info: issr IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION NOVEMBER 1996 • Industrial Temperature Operation 40°C to +85°C

00hy

Abstract: HOA9 IS28F020 TGD4404
Contextual Info: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY p r e l im in a r y SEPTEMBER 1995 FEATURES • High performance - 70 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 maximum standby current • Compatible with JEDEC-standard byte-wide

Contextual Info: IS24C04 ISSI •1 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Low p o w e r C M O S — A ctive cu rre n t less than 2 m A — Standby current less than 8 |iA • • • • • • • H a rdw a re w rite protection

628F

Abstract: MAX714
Contextual Info: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY AD VA N C E INFORM ATIO N DEC EM B ER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Industrial Temperature Operation 40°C to +85° C

BLV34

Abstract: 1S28 F002B issi 72m
Contextual Info: •■ 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORM ATION JULY 1997 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/130/150 ns

IS93C46-3

Abstract: sk 451 d15d01
Contextual Info: ISSI 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM A U G U S T 1995 FEATURES OVERVIEW • State-of-the-art architecture — Non-volatile data storage — Low voltage operation: 3.0V Vcc = 2.7V to 6.0V — Full T TL compatible inputs and outputs — Auto increment for efficient data dump

Contextual Info: ISSI IS61C632 32K x 32 SYNCHRONOUS FAST STATIC RAM P R E L IM IN A R Y S E P T E M B E R ! 995 FEATURES DESCRIPTION • The IS S IIS61C632 is a high-speed, low-power synchronous sta tic RAM desig ned to pro vid e a b u rsta ble, highperformance, secondary cache for the i486 , Pentium™,

Contextual Info: issr 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation Industrial Temperature Operation 40°C to +85°C • High-Performance Read

Contextual Info: ISSI 32K x 8 LOW VOLTAGE CMOS STATIC RAM AUGUST 1995 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The IS S I IS61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using IS S is high-performance CMOS technology. This highly reliable pro­

1S93C56-3

Contextual Info: ISSI 1S93C56-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM AUGUST 1995 FEATURES OVERVIEW • State-of-the-art architecture — N on-vo latile data storage — Low vo lta g e operation: 3.0V V cc = 2.7 V to 6.0V — Full T T L co m p a tib le inputs and outputs

Contextual Info: 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • S m artV oltage T echnology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration • H igh-Perform ance Read M axim um Access Tim es — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns