T-04 TRANSISTOR Search Results

Contextual Info: REV. DESCRIPTION A B C D DATE APPROVED 04/05/04 11/04/04 07/12/11 03/13/12 Engineering Release Engineering Update Request for Quotation Dimensioned Bumps M. C. M. C. T. Y. T. Y. 0.20 [5.1mm] 0.22 [5.5mm] 0.035 [0.9mm] —«- r 0.015 [0.4mm] TYP. 0.071 [1.8mm]

3PN0604

Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
Contextual Info: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow

3N0404

Abstract: infineon smd package
Contextual Info: Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1

3PN06L04

Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
Contextual Info: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow

3N0404

Abstract: IPB80N04S3-04 ANPS071E IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE
Contextual Info: IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.8 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

Contextual Info: National Semiconductor MILITARY DATA SHEET Original Creation Date: 04/24/95 Last Update D a t e : 04/24/95 Last Major Revision D a t e : 04/24/95 MNLMl 5 78—X R E V OAO SWITCHING REGULATOR General Description The LM1578 is a switching regulator which can easily be set up for such DC-to-DC voltage

GMA14

Abstract: GMA64
Contextual Info: ISSUED DATE :2005/04/04 REVISED DATE : G M A6 4 P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain. Features High DC current gain

2N6766

Abstract: 2N6166 200a liu TS0A 2N6765 tic 120 JVC kd 200
Contextual Info: □1 3875081 G E "dF ^ 3 SOLID ô ?5001 0 0 1 04 04 0 1~~_ T'3?'/3 0 1E 18 4 0 4 D _ Standard Power M O S F E T s STATE File Number 1591 2N6766 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE

2.45V PRECISION REFERENCE REGULATOR

Abstract: GQ2141
Contextual Info: ISSUED DATE :2006/04/04 REVISED DATE : GQ2141 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2141 of positive, linear regulator feature low quiescent current 50 A typ. with low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications.

TSS-6035

Abstract: tx 434 fsk modulator TDA7255 TDA7255V h86a bosch sm 17 35 integrated circuit BOSCH DEMODULATOR CLOCK VCO CI136
Contextual Info: Preliminary Data Sheet, Version 0.9, 2010-04-29 TDA7255V ASK/FSK 434MHz Wireless Transceiver Wireless Components N e v e r s t o p t h i n k i n g . Edition 2010-04-29 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 6/1/10.

Contextual Info: PRELIMINARY ICS844242I-04 FEMTOCLOCKS CRYSTAL-TO-LVDS 150MHZ CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS844242I-04 is a Serial ATA SATA /Serial ICS Attached SCSI (SAS) Clock Generator and a HiPerClockS™ member of the HiPerClocks T M family of high

bvc62

Abstract: STR 734
Contextual Info: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification

Contextual Info: PRELIMINARY ICS844244I-04 FEMTOCLOCKS CRYSTAL-TO-LVDS 150MHZ CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS844244I-04 is a Serial ATA SATA /Serial ICS Attached SCSI (SAS) Clock Generator and a HiPerClockS™ member of the HiPerClocks T M family of high

l17c

Abstract: 727 Transistor power values BLF246B
Contextual Info: DISCRETE SEMICONDUCTORS 0 Â T Â Sin] H T BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 Philips Semiconductors 2000 Feb 04 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor

AP24026

Abstract: EMC design ferrite chip spice model 1608HW241 EMC for PCB Layout hall ic 067 IC BOSCH 44 10X10 powerstar ems Design Seminar Signal Transmission
Contextual Info: App lica tion No te , V 3 .0 , Ap ril 2005 AP24026 Microcontroller EMC Design Guidelines M i c ro c o n troller Board Lay out Microcontrollers N e v e r s t o p t h i n k i n g . for TriCore Revision History: 2005-04 Previous Version: 2001-04 Page Subjects major changes since last revision

13.56Mhz class e power amplifier

Abstract: 13.56 MHz spiral antenna smd transistor marking 1p h Class E power amplifier, 13.56MHz TRANSISTOR SMD MARKING CODE 1P 12p smd 434 mhz oscillator tss-3b DIODE MARKING 47N MATERIAL SAFETY DATA SHEET RENATA CR2032
Contextual Info: D at a S h ee t , V 1. 2 , A pr i l 20 0 8 TDK5100F 434 M Hz ASK/ FS K Transm i tte r in 10 -p in Package W i re l e s s C o n t r o l Co mpo ne nts N e v e r s t o p t h i n k i n g . Edition 2008-04-04 Published by Infineon Technologies AG, Am Campeon 1-12,

be5l

Abstract: CA3046 equivalent lg 15.6 pinout CA3046 CA3046M BE4L d143 T transistor
Contextual Info: CA3045' CA3046 H A R R 'S M S E M I C O N D U C T O R J M • W » W General Purpose NPN Transistor Arrays N o vem b er 1996 Features Description • Two Matched Transistors T he C A 3 04 5 and C A 3 04 6 each co n sist o f five general p u rpo se silicon NPN transisto rs on a com m on m on olithic

STP80NF03L-04

Contextual Info: STP80NF03L-04  N-CHANNEL 30V - 0.0034 Ω - 80A TO-220 STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STP80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.0034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

Contextual Info: T C I 04 3456 x 1 CCD LINEAR IMAGE SENSOR D 2 6 8 7 , FEBRUARY 1 9 8 3 -R E V IS E D JU LY 1 989 T C I 04 . . . D U A L -IN -L IN E P ACKAGE 3 4 5 6 x 1 Sensor Element Organization TOP V IE W Virtual-Phase N-Channei Silicon MOS KJ Technology High Quantum Efficiency

STB80NF03L-04

Contextual Info: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A TO-262/TO-263 STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED