SY10EL11ZC Search Results

Contextual Info: Clockworks SY10EL11/L SY100EL11/L 5 V /3 3V 1:2 D IF F E R E N T ,A L FANOUT BUFFER SEMICONDUCTOR FEATURES DESCRIPTION • 3.3V and 5V power supply options The SY10/1OOEL11/L are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L

Contextual Info: ifll . « Clockworks SY10EL11 SY100EL11 DIFFERENTIAL FANOUT BUFFER CVAICD/'V SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 265ps propagation delay The SY10/100EL11 are 1:2 differential fanout gates. T hese d e vice s are fu n c tio n a lly s im ila r to the E111

SY10EL11ZC

Contextual Info: This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r ClockWoiks PRELIMINARY SY10/100EL11 SEMICONDUCTOR AC ELECTRICAL CHARACTERISTICS V ee = V ee M in. to V ee (M ax.); VCC = G N D +85°C +25°C 0°C _40°C Parameter

SY100EL11ZC

Contextual Info: « 5V/3.3V 1 :2 DIFFERENTIAL FANOUT BUFFER SYNERGY S E M IC O N D U C TO R FEATURES ^SYHJELI1/L S y Ìo o e u i/L DESCRIPTION • 3.3V and 5V power supply options The S Y 10/100E L11/L are 1:2 d iffe re n tia l fa n ou t gates. T hese devices are fu n ctio n a lly sim ilar to the E111A/L

SY100EL11ZC

Abstract: SY10EL11ZC
Contextual Info: This Material Copyrighted By Its Respective Manufacturer Clockworks PRELIMINARY *SYNERGY SY10/100EL11 SEM IC O NDU CTO R AC ELECTRICAL CHARACTERISTICS VEE = V ee M in. to Vee (M ax.); V c o « G N D —40°C Symbol Parameter tPLH tPHL Propagation Delay to

SY100EL11LZCTR

Abstract: SY100EL11ZCTR
Contextual Info: * 5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER SYNERGY SEMICONDUCTOR FEATURES ^ S Y ^ E L II/L SY100EL11/L DESCRIPTION • 3.3V and 5V power supply options T h e S Y 1 0 /1 0 0 E L 1 1 /L a re 1 :2 d iffe re n tia l fa n o u t g a te s . T h e s e d e v ic e s a re fu n c tio n a lly s im ila r to th e E 1 1 1 A /L

Contextual Info: «SYNERGY Clockworks PRELIMINARY SY10/100EL11 1:2 DIFFERENTIAL FANOUT BUFFER SEMICONDUCTOR DESCRIPTION FEATURES 265ps propagation delay The SY10EL/100EL11 are 1:2 differential fanout gates. These devices are functionally similar to the E111 devices, with higher performance capabilities. Having within-device

SY10EL11ZC

Abstract: max2905
Contextual Info: * Clockworks 1:2 DIFFERENTIAL FANOUT BUFFER SYNERGY SEMICONDUCTOR FEATURES P R E L IM IN A R Y SY10EL11 SY100EL11 D E S C R IP T IO N 265ps propagation delay 5ps skew between outputs High bandwidth output transitions Internal 75KD input pull-down resistors