SY100E404JCTR Search Results

SY100E404JCTR Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SY100E404JCTR		Micrel Semiconductor	Quad Differential AND/NAND Gate		Original	PDF
SY100E404JCTR		Micrel Semiconductor	QUAD DIFFERENTIAL AND/NAND		Original	PDF
SY100E404JC-TR		Microchip Technology	Integrated Circuits (ICs) - Logic - Gates and Inverters - Multi-Function, Configurable - IC GATE AND/NAND QUAD 28-PLCC		Original	PDF
SY100E404JCTR		Synergy Semiconductor	QUAD DIFFERENTIAL AND/NAND		Scan	PDF
SY100E404JCTR		Synergy Semiconductor	QUAD DIFFERENTIAL AND/NAND		Scan	PDF

SY100E404JCTR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SY10E404 SY100E404 FINAL QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V 700ps max. propagation delay High frequency outputs Internal 75KΩ input pull-down resistors Fully compatible with Motorola 10E/100E404	Original	SY10E404 SY100E404 700ps 10E/100E404 28-pin J28-1 SY10E404JCTR SY100E404JC	PDF
SY100E404 Abstract: SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q ■ Extended 100E V ee range of -4.2V to -5.5V The SY 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make	OCR Scan	SY10E404 SY100E404 700ps 10E/100E404 SY10/100E404 SY10E404JC J28-1 SY10E404JCTR SY100E404JC SY100E404 SY100E404JCTR	PDF
Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle	OCR Scan	SY10E404 SY100E404 10/100E404	PDF
100E404 Abstract: SY100E404 SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR Contextual Info: QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle	Original	SY10/100E404 SY10E404JCTR J28-1 SY100E404JC SY100E404JCTR SY10E404 SY100E404 J28-1) 100E404 SY100E404 SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR	PDF
Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle	OCR Scan	SY10E404 SY100E404 10/100E404	PDF
Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES DESCRIPTION Differential D and Q Extended 100E V ee range of -4.2V to -5.5V 700ps max. propagation delay High frequency outputs Internal 75K£i input pull-down resistors ESD protection of 2000V	OCR Scan	SY10E404 SY100E404 700ps 10E/100E404 10/100E J28-1 SY10E404JCTR SY100E404JC	PDF
Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle	OCR Scan	SY10E404 SY100E404 10/100E404 SY10E404JC J28-1 SY10E404JCTR SY100E404JC SY100E404JCTR	PDF
PART MARKING D0B Abstract: MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ Contextual Info: • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were	Original	SY10/100E404 M9999-032206 PART MARKING D0B MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ	PDF