SWITCHING TRANSISTOR 30V NPN Search Results

Contextual Info: SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

2N3904

Contextual Info: SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

SBC548

Abstract: Transistor 4501 ic SBC558 SBC-558
Contextual Info: SBC548 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with SBC558 Ordering Information Type NO. Marking SBC548 SBC548 Package Code TO-92

2N3906V

Abstract: 2N3904V
Contextual Info: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

BC848U

Abstract: BC858U
Contextual Info: BC848U Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858U Ordering Information Type NO. Marking BC848U Package Code BS SOT-323

2N3904U

Abstract: 2N3906U
Contextual Info: SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

Contextual Info: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

Contextual Info: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

BC848F

Abstract: BC858F
Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F

BC848F

Abstract: BC858F
Contextual Info: BC848F 7 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SOT-23F SA

BC848UF

Abstract: BC858UF
Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F

BC848UF

Abstract: Transistor BC858UF
Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F

Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F

BC848

Abstract: Transistor SA sot-23 BC858
Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank

Contextual Info: SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.

2N3904

Abstract: 2N3906
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.

BC848U

Abstract: BC858U
Contextual Info: BC848U NPN Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application 3 Features • High voltage : VCEO=30V • Complementary pair with BC858U 1 2 Ordering Information SOT-323 Type NO. Marking Package Code BC848U

2N3904C

Contextual Info: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. ᴌExcellent DC Current Gain Linearity.

transistor kn3904

Abstract: KN3904 KN3906
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , @VCe=30V, V eb=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @Ic=50mA, IB=5mA.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage

2SCR542P

Contextual Info: Midium Power Transistors 30V / 5A 2SCR542P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) (2) (3) 2) High speed switching

2N3735

Abstract: 2n3734
Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD

2n3734

Contextual Info: GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated 2N3734 2N3734 50V 30V Symbols VCBO VCEO VEBO IC PD

2SCR512P

Contextual Info: Midium Power Transistors 30V / 2A 2SCR512P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) (2) (3) 2) High speed switching