NP82N06ELC
Abstract: MP-25 NP82N06CLC NP82N06DLC
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06CLC, NP82N06DLC, NP82N06ELC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION
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NP82N06CLC,
NP82N06DLC,
NP82N06ELC
NP82N06CLC
O-220AB
NP82N06DLC
O-262
O-263
NP82N06ELC
MP-25
NP82N06CLC
NP82N06DLC
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2SK3108
Abstract: nec 2501
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC
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2SK3108
2SK3108
O-220
O-220
nec 2501
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2SK3110
Abstract: d1333
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC
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2SK3110
2SK3110
O-220
O-220
d1333
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2SK3110
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC
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2SK3110
2SK3110
O-220
O-220
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PA1572
Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Text: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and
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PA1572B
PA1572B
PA1572BH
10Pin
PA1572
C10535E
C10943X
MEI-1202
PT2320
PA1572BH
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2SK3108
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC
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2SK3108
2SK3108
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: 2SK2904-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-3P High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK2904-01
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s5850
Abstract: l0925
Text: 2SK3363-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3363-01
O-220AB
s5850
l0925
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MJ800
Abstract: No abstract text available
Text: 2SK3364-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3364-01
O-220AB
463mH
MJ800
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2SK3216
Abstract: No abstract text available
Text: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3216-01
O-220AB
2SK3216
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mosfet to-220ab
Abstract: mosfet 4800 2SK3216-01 2SK3216
Text: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3216-01
O-220AB
-55ch
mosfet to-220ab
mosfet 4800
2SK3216-01
2SK3216
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK3364-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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Original
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2SK3364-01
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK3363-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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Original
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2SK3363-01
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3216-01
O-220AB
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D1403
Abstract: No abstract text available
Text: NEC / MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES l Channel Temperature 175 Degree Rated 0 Super Low On-state Resistance
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NP30NOGHLD
NP30N06lLD
O-251
O-252
D1403
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2sk2903
Abstract: No abstract text available
Text: 2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK2903-01MR
O-220F15
2sk2903
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PDF
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2SK3217-01MR
Abstract: No abstract text available
Text: 2SK3217-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3217-01MR
O-220F15
2SK3217-01MR
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK2903-01MR
O-220F15
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2SK3217-01MR
Abstract: mosfet 4800 TO220F15
Text: 2SK3217-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3217-01MR
O-220F15
2SK3217-01MR
mosfet 4800
TO220F15
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A2792
Abstract: PA2792GR
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2792GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2792GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1
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PA2792GR
PA2792GR
A2792
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A2792
Abstract: PA2792AGR
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2792AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2792AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1
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PA2792AGR
PA2792AGR
M8E0904E
A2792
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diode 2JC
Abstract: 4S125
Text: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching
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DD13t
PM4550N---------------HITACHI/
diode 2JC
4S125
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PDF
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transistor BU 1037
Abstract: PA1572
Text: DATA SHEET Compound Field Effect Power Transistor _ / i P A 1 5 7 2 B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The /¿PA1572B is N -channel Power MOS FET Array in millimeters that built in 4 circuits designed for solenoid, motor and
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uPA1572B
uPA1572BH
transistor BU 1037
PA1572
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PDF
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NP10N45DHB
Abstract: MP-25 NP10N45CHB NP10N45EHB
Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP10N45CHB,NP10N45DHB,NP10N45EHB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
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NP10N45CHB
NP10N45DHB
NP10N45EHB
1600pF
MP-25
NP10N45EHB
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