SWITCHING DIODE 600V 2A Search Results

DIODE 200A 600V schottky

Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Contextual Info: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

600 V power Schottky silicon carbide diode

Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
Contextual Info: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior

SDP02S60

Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Contextual Info: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

d02s60

Abstract: D02S60C SDT02S60 D02S P-TO220-2-2
Contextual Info: SDT02S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

d02s60

Abstract: d02s60c PG-TO220-2-2 SDT02S60
Contextual Info: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

d02s60

Contextual Info: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current

10JL2C48A

Abstract: U10JL2C48A
Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current

Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current

Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current

10JL2C48A

Abstract: U10JL2C48A
Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current

10JL2CZ47A

Contextual Info: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A

20JL2C

Abstract: 600v 2A ultra fast recovery diode U20JL2C48A 10D2A
Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Unit: mm : VRRM = 600V Average Output Rectified Current : IO = 20A

10JL2CZ47

Contextual Info: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A

Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A,U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current

Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current

TOSHIBA DIODE DATABOOK

Abstract: 10JL2C48A U10JL2C48A
Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current

10JL2C48A

Abstract: U10JL2C48A
Contextual Info: 10JL2C48A,U10JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Output Rectified Current

20JL2C

Abstract: U20JL2C48A TOSHIBA DIODE DATABOOK 10D2A toshiba lead free mark
Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)

Contextual Info: 20JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 20A

Contextual Info: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 10A

Contextual Info: U20JL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20JL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600V : IO = 20A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)