SWITCHING DIODE 12C Search Results

12CGQ150

Contextual Info: 12CGQ150 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4090, REV.- HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Features: œ œ

Contextual Info: 12CGQ150 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4090, REV.- HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature

Contextual Info: Ordering number :EN1917A N0.1917A SB05-05CP Schottky Barrier Diode I 50V, 500mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • Low forward voltage (Vf max = 0.55V) • Fast reverse recovery time (trr max= 10ns)

5JL2CZ47

Contextual Info: TOSHIBA 5JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACE HED SILICON EPITAXIAL TYPE 5JL2CZ47 SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage Vr • Average Output Rectified Current I0 = 5A • Ultra Fast Reverse-Reeovery Time

Contextual Info: TO SH IB A 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A, 20FL2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V

Contextual Info: TOSHIBA 10DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 1QDL2C41A SWITCHING TYPE POWER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION , 10.3 M AX. • Repetitive Peak Reverse Voltage • Average O utput Rectified C urrent : I q = iOA

O536

Contextual Info: T O S H IB A 10DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C41A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3M A X. • Repetitive Peak Reverse Voltage • Average Output Rectified Current : Io = 10A

40rl50

Abstract: 5JUZ47 a30 DIODE DIODE A30
Contextual Info: SILICON EPITAXIAL TYPE SUPER FAST RECOVERY DIODE 0 J J J 2 4 7 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION. 1 0.3 MAX CONVERTER & CHOPPER APPLICATION. . 03.2 ±0-2 W: • Repetitive Peak Reverse Voltage : V^gjj=600V • Average Output Rectified Current : To=5A

ERB83-004

Abstract: diode ft 344
Contextual Info: E R 8 B 3 - 0 0 4 1 7 A I : Outl i ne Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features • 1&VF : Marking Low V F #7-3-1' : SH Super high speed switching. • - f ls - ir - Color code : ttflil-JC S& fSSRtt w High reliability by planer design, Abridged type name

SSR-10250-30V-12C

Abstract: industr SSR schematics SSR-85250-55V-12C rma 16 relay
Contextual Info: HELLROARING TECHNOLOGIES, INC. P.O. BOX 1521 POLSON, MT 59860 406 883-3801 HTTP://WWW.HELLROARING.COM SUPPORT@HELLROARING.COM SSR-10250-30V-12C The SSR-10250-30V-12C is designed for positive DC load switching solid state relay applications for voltages up to 30 Vdc

TO-220HV

Contextual Info: DSEE15-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 Vc trr = 35 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 1200 600 Symbol Type ISOPLUS 220HVTM DSEE15-12CC 1 Conditions 2 3 TC = 100°C; rectangular, d = 0.5

Contextual Info: DSEP 2x 25-12C HiPerDynFREDTM Epitaxial Diode IFAV = 2x 25 A VRRM = 1200 V trr = 20 ns with soft recovery Preliminary Data VRSM VRRM V V 1200 1200 miniBLOC, SOT-227 B Type DSEP 2x 25-12C Symbol Test Conditions IFRMS IFAVM IFRM TC = 70°C; rectangular, d = 0.5

Contextual Info: DSEP 15-12CR HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C DSEP 15-12CR A Isolated back surface * A = Anode, C = Cathode

Contextual Info: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 VQ trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 1200 600 Type ISOPLUS220TM 1 DSEE29-12CC 1 2 2 3 3 Isolated back surface * Symbol

Contextual Info: DSEE15-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 VQ trr = 35 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 1200 600 Type ISOPLUS220TM 1 DSEE15-12CC 1 2 2 3 3 Isolated back surface * Symbol

DSEE15-12CC

Contextual Info: DSEE15-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 1200 V trr = 35 ns ISOPLUS220TM Electrically Isolated Back Surface VRRM VRRM V V 1200 600 Type ISOPLUS220TM 1 DSEE15-12CC 1 2 2 3 3 Isolated back surface * Symbol

Contextual Info: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 VQ trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 1200 600 Type ISOPLUS220TM DSEE29-12CC 1 2 1 3 2 3 Isolated back surface * Symbol

Contextual Info: DSEP 2x 25-12C HiPerDynFREDTM Epitaxial Diode IFAV = 2x 25 A VRRM = 1200 V trr = 20 ns with soft recovery Preliminary Data VRSM VRRM V V 1200 1200 miniBLOC, SOT-227 B Type DSEP 2x 25-12C Symbol Test Conditions IFRMS IFAVM IFRM TC = 95°C; rectangular, d = 0.5

35-12C

Abstract: Epitaxial Diode FRED VRRM 1500 V 20 ns DIODE DATABOOK 3512C
Contextual Info: DIXYS DSEP 2x 35-12C Advanced Technical Information HiPerFRED Epitaxial Diode •FAV with soft recovery V rrm l rr V V HHM V Type V 1200 1200 DSEP 2x 35-12C 1 bl b H I W “ I 1 1 n Test Conditions Urms Uavm Urm Tc 5 5 °C ; rectangular, d 0.5 tP 10 us; rep. rating, pulse width limited by TVJM

Contextual Info: DSEP 30-12CR HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V = 20 ns trr with soft recovery Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C DSEP 30-12CR A Isolated back surface * A = Anode, C = Cathode

DSEE29-12CC

Contextual Info: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 1200 600 ISOPLUS 220 E153432 Type DSEE29-12CC 1 2 3 Isolated back surface* Symbol

30-12CR

Contextual Info: DSEP 30-12CR Advanced Technical Information HiPerDynFREDTM IFAV = 30 A VRRM = 1200 V trr = 20 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V 1200 1200 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 30-12CR A = Anode, C = Cathode

Contextual Info: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 1200 600 Type ISOPLUS220TM DSEE29-12CC 1 2 3 G Symbol Conditions Maximum Ratings

2x25-12c

Abstract: 2x25-12 2x2512c diode M4
Contextual Info: DSEP 2x25-12C HiPerDynFREDTM Epitaxial Diode with soft recovery IFAV = 2x25 A VRRM = 1200 V trr = 30 ns VRSM VRRM V V SOT-227 B, miniBLOC 1200 1200 Type DSEP 2x 25-12C Symbol Test Conditions Maximum Ratings IFRMS IFAVM TC = 90°C; rectangular, d = 0.5 100