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    SWICHING TRANSISTOR Search Results

    SWICHING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SWICHING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PJ13007CZ

    Abstract: No abstract text available
    Text: PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25℃ Characteristic Symbol Rating Uint Collector Base Voltage


    Original     		PJ13007 O-220 PJ13007CZ O-220 PW300 PDF

    QW-R203-019

    Abstract: MJE13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		MJE13007 O-220 QW-R203-019 100ms MJE13007 PDF

    PT 10000

    Abstract: No abstract text available
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		MJE13005 O-220F QW-R219-001 PT 10000 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78Ω (typ.) z High forward transfer admittance : |Yfs| = 11S (typ.)


    Original     		TK13H90A1 PDF

    equivalent mje13005

    Abstract: MJE13005 ib11
    Text: MJE13005 NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS TA=25 C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 75 Emitter-Base Voltage


    Original     		MJE13005 equivalent mje13005 MJE13005 ib11 PDF

    mje13003

    Abstract: UTCMJE13003 transistor mje13003 MJE13003 transistor
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		MJE13003 O-126 QW-R204-004 mje13003 UTCMJE13003 transistor mje13003 MJE13003 transistor PDF

    transistor mje13003

    Abstract: mje13003 MJE13003 transistor UTCMJE13003 QW-R203-017 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		MJE13003 O-220 QW-R203-017 transistor mje13003 mje13003 MJE13003 transistor UTCMJE13003 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V PDF

    TK130F06K3

    Abstract: K130F06K toshiba transistor date code marking K130F
    Text: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK130F06K3 TK130F06K3 K130F06K toshiba transistor date code marking K130F PDF

    Untitled

    Abstract: No abstract text available
    Text: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK130F06K3 30mitation, PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit INTERNAL SCHEMATIC DIAGRAM C 2 1 B (3) TO-92 E (1) 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS


    Original     		MJE13003 QW-R201-062 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		MJE13005 O-220F Co000 QW-R219-001 100ms PDF

    PJ13007 equivalent

    Abstract: PJ13007 swiching transistor PJ13007CZ swiching pj13007
    Text: PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25 ℃ Characteristic Symbol Rating Uint Collector Base Voltage


    Original     		PJ13007 O-220 PJ1300age PW300 PJ13007 equivalent PJ13007 swiching transistor PJ13007CZ swiching pj13007 PDF

    MJE13005

    Abstract: mje-13005 QW-R203-018 PT 10000
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		MJE13005 O-220 QW-R203-018 100ms MJE13005 mje-13005 PT 10000 PDF

    npn transistors 400V 1A

    Abstract: swiching transistor Transformer 9v 2a MJE13005B
    Text: MJE13005B NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS TA=25 C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 Emitter-Base Voltage Collector Current


    Original     		MJE13005B npn transistors 400V 1A swiching transistor Transformer 9v 2a MJE13005B PDF

    transistor MJe13007

    Abstract: mje13007 equivalent MJE13007 transistormje13007
    Text: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current


    Original     		MJE13007 transistor MJe13007 mje13007 equivalent MJE13007 transistormje13007 PDF

    K150F04K

    Abstract: TK150 TK150F04K3 toshiba date code marking
    Text: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)


    Original     		TK150F04K3 K150F04K TK150 TK150F04K3 toshiba date code marking PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK100F06K3 18mitation, PDF

    KSC2752

    Abstract: No abstract text available
    Text: KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V


    Original     		KSC2752 O-126 PW300 Cycle10% KSC2752 PDF

    toshiba transistor date code marking

    Abstract: TK100F06K3 K100F06K
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK100F06K3 toshiba transistor date code marking TK100F06K3 K100F06K PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK100F06K3 PDF

    2SA1297

    Abstract: 2SC3267
    Text: TO SH IBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat)“ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.4


    OCR Scan     		2SC3267 2SA1297 55MAX. 2SA1297 2SC3267 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS Û.2MAX. • • Low Saturation Voltage : V q E (sat)~ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.55MAX.


    OCR Scan     		2SC3267 2SA1297 55MAX. 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2752 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE TO -126 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VcBO Symbol 500 V Collector-Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo


    OCR Scan     		KSC2752 300jis, PDF

    2SA1297

    Abstract: 2SC3267
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297


    OCR Scan     		2SC3267 2SA1297 961001EAA2' 2SA1297 2SC3267 PDF