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    Toshiba America Electronic Components TK130F06K3(TE24L,Q

    Trans MOSFET NCH 60V 130A 3Pin TO220SM Embossed TR (Alt: TK130F06K3(TE24L,Q)
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    EBV Elektronik TK130F06K3(TE24L,Q 143 Weeks 1,000
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    K130F06K

    Abstract: TK130F06K3 TK130 ID130
    Text: K130F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K130F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 220 S (標準)


    Original     		TK130F06K3 K130F06K TK130F06K3 TK130 ID130 PDF

    Untitled

    Abstract: No abstract text available
    Text: K130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK130F06K3 PDF

    TK130F06K3

    Abstract: K130F06K toshiba transistor date code marking K130F
    Text: K130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK130F06K3 TK130F06K3 K130F06K toshiba transistor date code marking K130F PDF

    Untitled

    Abstract: No abstract text available
    Text: K130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK130F06K3 30mitation, PDF

    K130F06K

    Abstract: K130F TK130F06K3 M16100 TC-120V
    Text: K130F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K130F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 220 S (標準)


    Original     		TK130F06K3 K130F06K K130F TK130F06K3 M16100 TC-120V PDF