sum6k1n
Abstract: J 115 mosfet static characteristics of mosfet transistor marking DG
Text: SUM6K1N 0.15 W, 100 mA, 30 V Plastic Encapsulated Dual N-channel MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z A protection diode has been built in between the gate and the source to protect against static electricity
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PDF
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OT-363
01-June-2007
sum6k1n
J 115 mosfet
static characteristics of mosfet
transistor marking DG
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SUM6K1N
Abstract: MosFET
Text: SUM6K1N 0.1A , 30V , RDS ON 8 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to
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OT-363
24-Sep-2013
SUM6K1N
MosFET
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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Original
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PDF
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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