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    SUM110N10 Price and Stock

    Vishay Siliconix SUM110N10-09-E3

    MOSFET N-CH 100V 110A TO263
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    DigiKey SUM110N10-09-E3 Digi-Reel 3,236 1
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    SUM110N10-09-E3 Cut Tape 3,236 1
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    Vishay Intertechnologies SUM110N10-09-E3

    Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM110N10-09-E3)
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    Avnet Americas SUM110N10-09-E3 Reel 13 Weeks 800
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    Mouser Electronics SUM110N10-09-E3 956
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    Verical SUM110N10-09-E3 1,600 800
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    Arrow Electronics SUM110N10-09-E3 1,600 13 Weeks 800
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    Newark SUM110N10-09-E3 Bulk 800
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    Bristol Electronics SUM110N10-09-E3 423
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    Quest Components SUM110N10-09-E3 338
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    TTI SUM110N10-09-E3 Reel 4,800 800
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    TME SUM110N10-09-E3 577 1
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    Chip 1 Exchange SUM110N10-09-E3 1,317
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    Avnet Asia SUM110N10-09-E3 15 Weeks 800
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    EBV Elektronik SUM110N10-09-E3 14 Weeks 800
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    Vyrian SUM110N10-09-E3 3,588
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    Vishay Intertechnologies SUM110N10-08

    Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Rail/Tube (Alt: SUM110N10-08)
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    Avnet Americas SUM110N10-08 Tube 800
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    Vishay Siliconix SUM110N10-09

    110 A, 100 V, 0.0095 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB
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    Quest Components SUM110N10-09 798
    • 1 $4.14
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    Vyrian SUM110N10-09 1,470
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    Vishay Siliconix SUM110N1009

    Electronic Component
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    ComSIT USA SUM110N1009 178
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    Find more SUM110N10 price and stock on Findchips.com

    SUM110N10 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUM110N10-08 Vishay Telefunken N-Channel 100-V (D-S) 200C MOSFET Original PDF
    SUM110N10-08 SPICE Device Model Vishay N-Channel 100-V (D-S) 200°C MOSFET Original PDF
    SUM110N10-09 Vishay Intertechnology N-Channel 100-V (D-S) 200°C MOSFET Original PDF
    SUM110N10-09 Vishay Siliconix N-Channel 100-V (D-S) 200C MOSFET Original PDF
    SUM110N10-09 Vishay Siliconix MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:110A; On-Resistance, Rds(on):9.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263; Leaded Process Compatible:No Original PDF
    SUM110N10-09-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 110A D2PAK Original PDF
    SUM110N10-09-E3 Vishay Siliconix N-Channel 100-V (D-S) 200C MOSFET Original PDF
    SUM110N10-09 SPICE Device Model Vishay N-Channel 100-V (D-S) 200°C MOSFET Original PDF

    SUM110N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SUM110N10-09

    Abstract: sum110n10
    Text: SUM110N10-09 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V


    Original     		SUM110N10-09 O-263 S-04970--Rev. 29-Oct-01 SUM110N10-09 sum110n10 PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 08-Apr-05 SUM110N10-09 SUM110N10-09-E3 PDF

    SUM110N10-08

    Abstract: No abstract text available
    Text: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V


    Original     		SUM110N10-08 O-263 18-Jul-08 SUM110N10-08 PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 125ure S-32523--Rev. 08-Dec-03 SUM110N10-09 SUM110N10-09-E3 PDF

    SUM110N10-08

    Abstract: S-22126-Rev
    Text: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V


    Original     		SUM110N10-08 O-263 S-22126--Rev. 25-Nov-02 SUM110N10-08 S-22126-Rev PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SUM110N10-09

    Abstract: sum110n10
    Text: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUM110N10-09 0-to10V 18-Apr-01 SUM110N10-09 sum110n10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-08 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0085 @ VGS = 10 V


    Original     		SUM110N10-08 O-263 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N10-09 www.vishay.com Vishay Siliconix N-Channel 100 V D-S 200 ° MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SUM110N10-09 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    A 8014

    Abstract: AN609 SUM110N10-09
    Text: SUM110N10-09_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SUM110N10-09 AN609 23-Nov-07 A 8014 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AN-826

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN-826 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 11-Mar-11 PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3 sum110n10
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 18-Jul-08 SUM110N10-09 SUM110N10-09-E3 sum110n10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix New Product N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09 SUM110N10-09-E3 08-Apr-05 PDF

    SUM110N10-09

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUM110N10-09 S-60674Rev. 01-May-06 SUM110N10-09 PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix New Product N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 08-Apr-05 SUM110N10-09 SUM110N10-09-E3 PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 18-Jul-08 SUM110N10-09 SUM110N10-09-E3 PDF

    SUM110N10-09

    Abstract: No abstract text available
    Text: SPICE Device Model SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUM110N10-09 18-Jul-08 SUM110N10-09 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09 SUM110N10-09-E3 08-Apr-05 PDF

    REG IC 48V IN 12V 10A OUT ic

    Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA
    Text: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		ISL6144 FN9131 ISL6144 REG IC 48V IN 12V 10A OUT ic smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144IRZA ISL6144IVZA PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC2587/MIC2587R Single-Channel, Positive High-Voltage Hot Swap Controller Revision 2.0 General Description Features The MIC2587 and MIC2587R are single-channel positive voltage hot swap controllers designed to provide safe insertion and removal of boards for systems that require


    Original     		MIC2587/MIC2587R MIC2587 MIC2587R PDF

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		ISL6144 FN9131 ISL6144 PDF