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    Abstract: No abstract text available
    Text: STT2623 -2A, -30V,RDS ON 170mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2623 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.


    Original
    STT2623 STT2623 01-Jun-2002 PDF