STRH40N6SY1
Abstract: JESD97 STRH40N6SY3
Text: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY1
STRH40N6SY3
100kRad
34Mev/cm
STRH40N6SY1
JESD97
STRH40N6SY3
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Untitled
Abstract: No abstract text available
Text: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STRH40N6SY3
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RAD SMD MARKING CODE
Abstract: smd diode marking code TO3
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
DocID18351
RAD SMD MARKING CODE
smd diode marking code TO3
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st smd diode marking to3
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S
st smd diode marking to3
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smd DIODE code marking 20A
Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
Text: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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PDF
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STRH40N6SY3
100kRad
34Mev/cm
smd DIODE code marking 20A
smd code diode 20a
STRH40N6SY1
STRH40N6SY3
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
STRH40N6SG
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Untitled
Abstract: No abstract text available
Text: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY3
100kRad
34Mev/cm
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HV33010
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite ■ High reliability
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STRH40N6
STRH40N6S1
STRH40N6SG
HV33010
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st smd diode marking to3
Abstract: 0301 smd STRH40N6SG
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S
st smd diode marking to3
0301 smd
STRH40N6SG
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st smd diode marking to3
Abstract: smd diode marking code TO3 mosfet SMD MARKING CODE 352 STRH40N6 STMicroelectronics smd DIODE marking code smd st diode marking to3 STRH40N6SY1 smd diode order marking code stmicroelectronics smd K 739 mosfet
Text: STRH40N6 N-channel 60 V, 0.036 Ω, SMD.5 rad-hard low gate charge STripFET Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened
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STRH40N6
STRH40N6SY1
st smd diode marking to3
smd diode marking code TO3
mosfet SMD MARKING CODE 352
STRH40N6
STMicroelectronics smd DIODE marking code
smd st diode marking to3
STRH40N6SY1
smd diode order marking code stmicroelectronics
smd K 739 mosfet
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
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STRH40N6SG
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications
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Original
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STRH40N6
STRH40N6S1
STRH40N6SG
STRH40N6SG
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st smd diode marking to3
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard P-channel 100 V, 30 A Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications ■ Satellite
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Original
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PDF
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STRH40N6
STRH40N6S1
STRH40N6S
st smd diode marking to3
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
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