STPSC6H065D Search Results
STPSC6H065D Price and Stock
STMicroelectronics STPSC6H065DLFDIODE SIC 650V 6A POWERFLAT HV |
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STPSC6H065DLF | Digi-Reel | 10,586 | 1 |
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STPSC6H065DLF | Reel | 19 Weeks | 3,000 |
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STPSC6H065DLF | 1,298 |
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STPSC6H065DLF | 6,000 | 3,000 |
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STPSC6H065DLF | 6,000 | 19 Weeks | 3,000 |
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STPSC6H065DLF | Cut Tape | 1 |
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STPSC6H065DLF | 1,298 | 1 |
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STPSC6H065DLF | 6,000 | 17 Weeks | 3,000 |
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STPSC6H065DLF | 20 Weeks | 3,000 |
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STMicroelectronics STPSC6H065DDIODE SIL CARB 650V 6A TO220AC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC6H065D | Tube | 958 | 1 |
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STPSC6H065D | Tube | 2,000 | 19 Weeks | 1,000 |
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STPSC6H065D | 691 |
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STPSC6H065D | 476 | 7 |
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STPSC6H065D | 479 | 19 Weeks | 1 |
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STPSC6H065D | Bulk | 1 |
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STPSC6H065D | 691 | 1 |
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STPSC6H065D | 1 |
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STPSC6H065D | 1,850 | 17 Weeks | 50 |
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STPSC6H065D | 20 Weeks | 50 |
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STPSC6H065D | 325 |
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STMicroelectronics STPSC6H065DIDIODE SIC 650V 6A TO220AC INS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC6H065DI | Tube | 756 | 1 |
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STPSC6H065DI | Tube | 19 Weeks | 1,000 |
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STPSC6H065DI |
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STPSC6H065DI | Bulk | 1 |
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STPSC6H065DI | 1 |
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STPSC6H065DI | 1 |
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STPSC6H065DI | 6,000 | 17 Weeks | 50 |
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STPSC6H065DI | 20 Weeks | 50 |
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STPSC6H065DI | 4,900 |
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STPSC6H065D Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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STPSC6H065D |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 6A TO220AC | Original | |||
STPSC6H065DI |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 6A TO-220AC | Original | |||
STPSC6H065DLF |
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SILICON CARBIDE DIODES | Original |
STPSC6H065D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ K K A A K TO-220AC STPSC6H065D High forward surge capability |
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STPSC6H065 O-220AC STPSC6H065D | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet − production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ K K Description The SiC diode is an ultrahigh performance power |
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STPSC6H065 O-220AC STPSC6H065D | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A K K K |
Original |
STPSC6H065 |