STK16 Search Results

STK14C88

Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
Contextual Info: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems

stk1625

Abstract: STK1625F stk16
Contextual Info: STK1625F Semiconductor Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • High Voltage: BVDSS=250V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=29nC(Typ.) Low RDS(on) :RDS(on)=0.27Ω(Max.)

16C88

Abstract: architecture of TMS320C52 5v sram simtek NVSRAM to 15c 10k STK11C88 STK15C88 STK16C88 TITMS320
Contextual Info: Applying the STK11C88, STK15C88 and STK16C88 32K x 8 nvSRAM Abstract SRAM Operations Simtek Corporation’s family of high speed 256 kilobit nonvolatile Static Random Access Memories includes the STK15C88 AutoStore and STK11C88 Software Store and STK16C88

STK14C88

Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
Contextual Info: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM

Contextual Info: STK16C68 8K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems

SIMTEK CORPORATION

Abstract: 303F DS1230 STK16C88 STK16C88-25 STK16C88-45 dallas date code ds1230
Contextual Info: STK16C88 32Kx8 AutoStore+ nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Time The Simtek STK16C88 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

CS-570

Abstract: stk16N05 *16N06
Contextual Info: SGS-THOMSON S T K 1 6 N 05 S T K 1 6 N 06 ¡O N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS on| Id STK16N05 50 V 0.09 n 16 A STK16N06 60 V 0.10 a 16 A „ , . r , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

STK14C88-3

Abstract: STK16C88-3 30-3F
Contextual Info: STK16C88-3 32K x 8 AutoStorePlus nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM Preliminary FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM

Contextual Info: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM

Contextual Info: STK16CA8 128K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Preliminary FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times • Directly Replaces 128K x 8 Static RAM, Battery-Backed RAM or EEPROM • Transparent Data Save on Power Down

STK16N10L

Abstract: STK16N10
Contextual Info: STK16N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK16N10L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.12 Ω 16 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

16C68

Abstract: STK16C68 STK16C88 capacitor A5
Contextual Info: Converting STK16C68 to STK16C88 Introduction This document provides guidance on converting a design that is currently using the STK16C68 to the Simtek recommended part STK16C88. Feature set and limitations of the16C68 Function Category Capacitor location Autostore

taa 723

Abstract: DS1230 STK16C88 STK16C88-WF45
Contextual Info: STK16C88 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • 25 ns and 45 ns access times ■ Directly replaces battery-backed SRAM modules such as Dallas/Maxim DS1230 AB ■ Automatic nonvolatile STORE on power loss ■ Nonvolatile STORE under Software control

taa 723

Abstract: DS1230W STK16C88-3
Contextual Info: STK16C88-3 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • Fast 35 ns Read Access and R/W Cycle Time ■ Directly replaces Battery-backed SRAM Modules such as Dallas/Maxim DS1230W ■ Automatic Nonvolatile STORE on Power Loss ■ Nonvolatile STORE under Software Control

STK14C88-3

Abstract: STK16C88-3 303F
Contextual Info: STK16C88-3 32K x 8 AutoStorePlus nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • 3.0V-3.6V Operation • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate

STK12C68

Abstract: STK15C68 STK16C68
Contextual Info: STK16C68 8K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems

303F

Abstract: STK14C88-3 STK16C88-3
Contextual Info: STK16C88-3 32K x 8 AutoStorePlus nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM

STK16C88-WF45

Abstract: SRAM TTL
Contextual Info: STK16C88 256-Kbit 32 K x 8 AutoStore+ nvSRAM 256-Kbit (32 K × 8) AutoStore+ nvSRAM Functional Description • 25 ns and 45 ns access times ■ Directly replaces battery-backed SRAM modules such as Dallas/Maxim DS1230 AB ■ Automatic nonvolatile STORE on power loss

32KX8

Abstract: 303F DS1230W STK16C88-3
Contextual Info: STK16C88-3 32Kx8 AutoStore+ nvSRAM FEATURES DESCRIPTION • Fast 35 ns Read Access & R/W Cycle Time The Simtek STK16C88-3 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Directly Replaces Battery-Backed SRAM

taa 723

Abstract: DS1230 STK16C88 STK16C88WF45
Contextual Info: STK16C88 256 Kbit 32K x 8 AutoStore+ nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Directly replaces battery-backed SRAM modules such as Dallas/Maxim DS1230 AB ■ Automatic nonvolatile STORE on power loss ■ Nonvolatile STORE under Software control

taa 723

Abstract: DS1230W STK16C88-3
Contextual Info: STK16C88-3 256 Kbit 32K x 8 AutoStore+ nvSRAM Features Functional Description • Fast 35ns Read access and R/W cycle time ■ Directly replaces battery-backed SRAM modules such as Dallas/Maxim DS1230W ■ Automatic nonvolatile STORE on power loss ■ Nonvolatile STORE under Software control

STP8N10L

Abstract: STK12N STLT20 STLT20FI
Contextual Info: SELECTION GUIDE - LOGIC: LEVEL V BR DSS (V ) f*D S (o n )^ 0 max Id (A) Type Package max (pF) 1500 1500 1500 400 • 400. 829 829 543 65 7.00 10.00 10.00 4.00 • 4 .0 0 » Ptot 60 110 35 45 (W) (11) Page 571 SOT-82 STK16N10L 16.0 TO-220 ISOW220 SOT-82 STP20N10L

taa 723

Abstract: DS1230W STK16C88-3
Contextual Info: STK16C88-3 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • Fast 35 ns Read Access and R/W Cycle Time ■ Directly replaces Battery-backed SRAM Modules such as Dallas/Maxim DS1230W ■ Automatic Nonvolatile STORE on Power Loss ■ Nonvolatile STORE under Software Control

DS1230

Abstract: STK16C88
Contextual Info: STK16C88 256 Kbit 32K x 8 AutoStore+ nvSRAM Functional Description • 25 ns and 45 ns access times ■ Directly replaces battery-backed SRAM modules such as Dallas/Maxim DS1230 AB ■ Automatic nonvolatile STORE on power loss ■ Nonvolatile STORE under Software control