STD100 Search Results

Contextual Info: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

JESD97

Abstract: STD100NH02L STD100NH02L-1 STD100NH02LT4
Contextual Info: STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD100NH02L STD100NH02L-1 24V 24V <0.0048Ω <0.0048Ω 60A(1) 60A(1) 3 3 2 1 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark

100N10F7

Contextual Info: STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max 100 V 0.008 Ω STD100N10F7 STF100N10F7

D100N03L

Abstract: JESD97 STD100N03L STD100N03L-1 STD100N03LT4
Contextual Info: STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET MOSFET General features Package Type VDSSS STD100N03L 30 V <0.0055 Ω 80 A 1 110 W STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W RDS(on) ID Pw 3 3 • 100%AVALANCHE TESTED

STD100NH02L

Contextual Info: STD100NH02L N-CHANNEL 20V - 0.0038 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD100NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0048 Ω 80 A(#) TYPICAL RDS(on) = 0.0038 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

STD100NH02L

Contextual Info: STD100NH02L N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD100NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0048 Ω 60 A(2) TYPICAL RDS(on) = 0.0042 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

100N3LF3

Abstract: STD100N3LF3 ID13206
Contextual Info: STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET II Power MOSFET Features Type VDSSS STD100N3LF3 30 V RDS on ID Pw <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 • 100% avalanche tested ■ Logic level threshold DPAK Applications

D100N

Abstract: JESD97 STD100NH02L STD100NH02L-1 STD100NH02LT4
Contextual Info: STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD100NH02L STD100NH02L-1 24V 24V <0.0048Ω <0.0048Ω 60A(1) 60A(1) 3 3 2 1 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark

Contextual Info: STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB 3 Order codes 1 3 VDS RDS on max ID PTOT 80 A

D100NH03L

Abstract: JESD97 STD100NH03L STD100NH03LT4
Contextual Info: STD100NH03L N-channel 30V - 0.005Ω - 60A - DPAK STripFET III Power MOSFET General features 1. Type VDSSS RDS on ID STD100NH03L 30V <0.0055Ω 60A(1) Value limited by wire bonding 3 • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced

STD100NH02L

Contextual Info: STD100NH02L N-CHANNEL 20V - 0.0038 W - 60A DPAK STripFET III POWER MOSFET TYPE STD100NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0048 W 60 A(#) TYPICAL RDS(on) = 0.0038 W @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED

JESD97

Abstract: STD100NH02L STD100NH02L-1 STD100NH02LT4 D100N
Contextual Info: STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD100NH02L STD100NH02L-1 24V 24V <0.0048Ω <0.0048Ω 60A(1) 60A(1) 3 3 2 1 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark

d100nh02l

Abstract: STD100NH02L STD100NH02L-1 STD100NH02LT4
Contextual Info: STD100NH02L N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD100NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0048 Ω 60 A(2) TYPICAL RDS(on) = 0.0042 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

D100NH03L

Abstract: JESD97 STD100NH03L STD100NH03LT4
Contextual Info: STD100NH03L N-channel 30V - 0.005Ω - 60A - DPAK STripFET III Power MOSFET General features 1. Type VDSSS RDS on ID STD100NH03L 30V <0.0055Ω 60A(1) Value limited by wire bonding 3 • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced

STD100NH02L

Contextual Info: STD100NH02L N-CHANNEL 20V - 0.0038 Ω - 60A DPAK STripFET III POWER MOSFET TYPE STD100NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0048 Ω 60 A(#) TYPICAL RDS(on) = 0.0038 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

15A-31

Abstract: D100N D100N03L JESD97 STD100N03L STD100N03L-1 STD100N03LT4
Contextual Info: STD100N03L STD100N03L-1 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N03L 30 V <0.0055 Ω 80 A(1) 110 W STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

Contextual Info: STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET II Power MOSFET Features Type VDSSS STD100N3LF3 30 V RDS on ID Pw <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 • 100% avalanche tested ■ Logic level threshold DPAK Applications

100N3LF3

Abstract: JESD97 STD100N3LF3 STU100N3LF3
Contextual Info: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

Contextual Info: STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes DPAK VDSS RDS on STD100N10F7 STF100N10F7 100 V

100N3LF3

Abstract: STD100N3LF3
Contextual Info: STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET II Power MOSFET Features Type VDSSS STD100N3LF3 30 V RDS on ID Pw <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 • 100% avalanche tested ■ Logic level threshold DPAK Applications

STD100NH03L

Abstract: D100NH03 D100NH03L STD100NH03LT4
Contextual Info: STD100NH03L N-CHANNEL 30V - 0.005 Ω - 60A DPAK STripFET III POWER MOSFET TYPE STD100NH03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.0055 Ω 60 A(2) TYPICAL RDS(on) = 0.005 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

STD100NH02L

Contextual Info: STD100NH02L N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD100NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0048 Ω 60 A(2) TYPICAL RDS(on) = 0.0042 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

D100N03L

Abstract: diode st 2060 D100N JESD97 STD100N03L STD100N03L-1 STD100N03LT4 STD100
Contextual Info: STD100N03L STD100N03L-1 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N03L 30 V <0.0055 Ω 80 A(1) 110 W STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

STP100N10

Abstract: 100N10F7 STD100N10F7 STP100N10F7
Contextual Info: STD100N10F7 STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK and TO-220 packages Datasheet — preliminary data Features • ■ Type VDSS RDS on max STD100N10F7 100 V 0.008 Ω 80 A 120 W STP100N10F7 100 V