IW4034BDW
Abstract: IW4034BN
Text: IW4034B 8-STAGE STATIC BIDIRECTIONAL PARALLEL/ SERIAL INPUT/OUTPUT BUS REGISTER High-Voltage Silicon-Gate CMOS The IW4034B is a static eight-stage parallel-or serial-input parallel-output register. It can be used to: 1 bidirectionally transfer parallel information between two
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IW4034B
IW4034B
IW4034BDW
IW4034BN
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SL4034B
Abstract: SL4034BD
Text: SL4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The SL4034B is a static eight-stage parallel-or serial-input paralleloutput register. It can be used to: 1 bidirectionally transfer parallel information between two buses, 2)
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SL4034B
SL4034B
SL4034BD
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KK4034B
Abstract: KK4034BDW
Text: TECHNICAL DATA KK4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The KK4034B is a static eight-stage parallel-or serial-input paralleloutput register. It can be used to: 1 bidirectionally transfer parallel information between two buses, 2)
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KK4034B
KK4034B
-BUSKK4034BN
013AD)
KK4034BDW
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IW4034BN
Abstract: No abstract text available
Text: TECHNICAL DATA IW4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The IW4034B is a static eight-stage parallel-or serial-input parallel-output register. It can be used to: 1 bidirectionally transfer parallel information between two buses,
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IW4034B
IW4034B
IW4034BN
BIW4034BDW
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IW4034BDW
Abstract: No abstract text available
Text: TECHNICAL DATA IW4034B 8-Stage Static Bidirectional Parallel/ Serial Input/Output Bus Register High-Voltage Silicon-Gate CMOS The IW4034B is a static eight-stage parallel-or serial-input paralleloutput register. It can be used to: 1 bidirectionally transfer parallel information between two buses, 2)
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IW4034B
IW4034B
-BUSIW4034BN
013AD)
IW4034BDW
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ZTX605
Abstract: 100 amp npn darlington power transistors ZTX604 DSA003770
Text: ZTX604 ZTX605 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 2K 5K 2K 0.5K Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times
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ZTX604
ZTX605
500mA,
100mA,
20MHz
500mV,
100ms
ZTX605
100 amp npn darlington power transistors
ZTX604
DSA003770
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ztx603
Abstract: No abstract text available
Text: ZTX602 Not Recommended for New Design Please Use ZTX603 ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE Transition Frequency fT
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ZTX602
ZTX603
ZTX603
100ms
ZTX602
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ZTX958
Abstract: TO-1 amps pnp transistor transistor 3330 DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo
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ZTX958
-500mA,
-10mA,
-50mA
-100V
-100mA,
50MHz
ZTX958
TO-1 amps pnp transistor
transistor 3330
DSA003780
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ZTX855
Abstract: VCB-200V DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio
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ZTX855
100mA,
50MHz
100mA
Am100
100ms
ZTX855
VCB-200V
DSA003778
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ZTX849
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX849 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 850 950 mV IC=5A, VCE=1V* Static Forward Current Transfer Ratio
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ZTX849
100mA,
50MHz
100mA
100ms
ZTX849
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
DSA003777
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ZTX857
Abstract: 300V transistor npn 2a DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio
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ZTX857
100mA,
100MHz
250mA,
500mA,
100ms
ZTX857
300V transistor npn 2a
DSA003778
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DARLINGTON 1A 60V npn to92
Abstract: ZTX602 ZTX603 DSA003770
Text: ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL hFE Static Forward Current Transfer Ratio ZTX602 MIN. MAX. MIN. 2K 5K 2K 0.5K 2K 5K 2K 0.5K 100K 150
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ZTX602
ZTX603
500mA,
100mA,
20MHz
DARLINGTON 1A 60V npn to92
ZTX602
ZTX603
DSA003770
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ZTX869
Abstract: PS 307 5A DSA003778
Text: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio
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ZTX869
100mA,
50MHz
100mA
100ms
ZTX869
PS 307 5A
DSA003778
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ZTX853
Abstract: DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio
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ZTX853
100mA,
50MHz
100mA
100ms
ZTX853
DSA003778
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ZTX956
Abstract: DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio
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ZTX956
-100mA,
50MHz
-100mA
100mA,
-10mA,
100ms
ZTX956
DSA003780
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ZTX957
Abstract: TO-1 amps pnp transistor DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio
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ZTX957
-100mA,
50MHz
-500mA,
-50mA
-100V
-10mA,
100ms
ZTX957
TO-1 amps pnp transistor
DSA003780
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ZTX955
Abstract: DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio
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ZTX955
-100mA,
50MHz
-100mA
100mA,
-10mA,
100ms
ZTX955
DSA003780
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ZTX851
Abstract: DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX851 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 840 950 mV IC=4A, VCE=1V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio
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ZTX851
100mA,
50MHz
100mA
100ms
ZTX851
DSA003778
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ZTX601
Abstract: No abstract text available
Text: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K
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ZTX600
ZTX601
ZTX601
ZTX600
100ms
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ZTX605
Abstract: No abstract text available
Text: ZTX604 Not Recommended for New Design Please Use ZTX605 ZTX604 ZTX605 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 2K 5K 2K 0.5K Transition Frequency fT 150 Input Capacitance
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ZTX604
ZTX605
100ms
ZTX605
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ZTX949
Abstract: DSA003779
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX949 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V* Static Forward Current Transfer Ratio
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ZTX949
-100mA,
50MHz
-400mA
400mA,
-10mA,
100ms
ZTX949
DSA003779
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ztx953
Abstract: IN 3319 B DSA003779
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*
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ZTX953
-10mA,
100ms
ztx953
IN 3319 B
DSA003779
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ZTX948
Abstract: DSA003779
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*
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ZTX948
-10mA,
-100mA,
50MHz
-400mA
400mA,
100ms
ZTX948
DSA003779
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ZTX705
Abstract: ZTX704 DSA003774
Text: ZTX704 ZTX705 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL ZTX704 MIN. ZTX705 MAX. MIN. 3K 3K 3K 2K UNIT CONDITIONS. MAX. IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition
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ZTX704
ZTX705
-10mA,
-100mA,
20MHz
100ms
ZTX705
ZTX704
DSA003774
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