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    STATIC RAM 6264 Search Results

    STATIC RAM 6264 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    STATIC RAM 6264 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6264c

    Abstract: 710b MCM6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35
    Text: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing


    Original     		PDF MCM6264C/D MCM6264C MCM6264C MCM6264C/D* 6264c 710b MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35

    710b

    Abstract: 6264C MCM6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35
    Text: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola’s high–performance silicon–gate CMOS technology. Static design eliminates the need for external clocks or timing


    Original     		PDF MCM6264C/D MCM6264C MCM6264C MCM6264C/D* 710b 6264C MCM6264CJ12 MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35

    GR881

    Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
    Text: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR881 GR881 2000/95/EC STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan     		PDF ADE-40 101490 P22n HM50464P-12 50464 ram

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-492 Z HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM Preliminary HITACHI The Hitachi HM 6264BI is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 pm CMOS process technology.


    OCR Scan     		PDF ADE-203-492 HM6264BI 192-word 6264BI 64k-bit HM6264BLPI DP-28) HM6264BLFPI FP-28DA)

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    6264blp

    Abstract: cs107
    Text: I HM6264B Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-454 Z Rev. 0.0 Sep. 5,1995 Description The Hitachi HM 6264B is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher perform ance and low power consumption by 1.5 ¡am CM OS process technology. The device, packaged in 450 mil SOP (foot


    OCR Scan     		PDF HM6264B 192-word ADE-203-454 6264B 64k-bit 6264BLP DP-28) cs107

    Untitled

    Abstract: No abstract text available
    Text: HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-492A Z Rev. 1.0 Sep. 5, 1996 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 pm CMOS process technology. The device,


    OCR Scan     		PDF HM6264BI 192-word ADE-203-492A 64k-bit HM6264BLFPI DP-28) HM6264BLPI

    6264blf

    Abstract: HM6264BLPI-10
    Text: HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-492A Z Rev. 1.0 Sep. 5, 1996 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword x 8-bit. It realizes higher performance and low power consumption by 1.5 flm CMOS process technology. The device, packaged in 450 mil SOP


    OCR Scan     		PDF HM6264BI 192-word ADE-203-492A 64k-bit 6264blf HM6264BLPI-10

    STATIC RAM 6264

    Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
    Text: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)


    OCR Scan     		PDF 6116/SIS 6116H 45/55/70ns 6116H) 100/120/150ns 250mW STATIC RAM 6264 RAM 6264 6264 EPROM 6116 RAM 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns

    MS6264L-10PC

    Abstract: MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC MS6264-70PC r7777T MS6264L-70
    Text: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 70/100 ns Max. The M OSEL MS6264 is a high performance, low power CM OS static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an active LOW chip enable (Et) and an active High chip


    OCR Scan     		PDF MS6264 495mW MS6264L 550nW MS6264 500mV MS6264-70PC P28-1 MS6264-70FC MS6264L-10PC MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC r7777T MS6264L-70

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The


    OCR Scan     		PDF ta3S33Tl MS6264A MS6264A S6264AL-45N P28-2 S6264AL-45P P28-1 S6264AL-45S S28-1 S6264AL-55N

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL PATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks ortiming strobes, while CMOS circuitry reduces power consumption and provides for


    OCR Scan     		PDF MCM6264C ---------------6264C MCMH264CP12 MCMK264CP15 MCMB264CP20 MCM6264CP25 264CP35 MCM6264CJ12 MCM6264CJ15 MCM6264CJ20

    6264c

    Abstract: 710b 810B-03 MCM6264C MCM6264CJ12 MCM6264CJ12R2 MCM6264CJ15 MCM6264CP12 MCM6264CP15
    Text: MOTOROLA Order this document by MCM6264C/D SEMICONDUCTOR TECHNICAL DATA 8K x 8 Bit Fast Static RAM MCM6264C The MCM6264C is fabricated using M otorola’s high-perform ance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing


    OCR Scan     		PDF MCM6264C/D MCM6264C MCM6264C 6264c 710b 810B-03 MCM6264CJ12 MCM6264CJ12R2 MCM6264CJ15 MCM6264CP12 MCM6264CP15

    NVR8

    Abstract: GREENWICH INSTRUMENTS
    Text: GREENWICH 8K X 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • NVR8 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit to number of programming cycles Fits standard 28-pin socket


    OCR Scan     		PDF 28-pin NVR8 GREENWICH INSTRUMENTS

    MCM6264P

    Abstract: MCM6264WP45 6264N MCM6264P45 motorola 6264 ram MCM6264wp MCM6264WP35 MCM6264 MCM6264-46
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264 8 K x 8 Bit Fast Static RAM The MCM6264 Is a 65,536 bit static random access memory organized a s 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CM O S technology. Static design eliminates the need for external clocks or timing strobes, while CM O S circui­


    OCR Scan     		PDF MCM6264 MCM6264P30 MCM6264P3S MCM6264P45 MCM6264P55 MCM6264WP30 MCM6264WP35 MCM6264WP45 MCM6264WP55 MCM6264P 6264N motorola 6264 ram MCM6264wp MCM6264-46

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264C 8K x 8 Bit Fast Static RAM The MCM6264C is fabricated using Motorola’s high-performance siiicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for


    OCR Scan     		PDF MCM6264C MCM6264C 6264C MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35 MCM6264CJ12 MCM6264CJ15

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6264A 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The MOSEL MS6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. It is built with


    OCR Scan     		PDF 825mW MS6264A MS6264A 536-bit 28-pin PID002C S6264A-20PC S6264A-20N

    HM6264ALP-10

    Abstract: HM6264ALP-10L HM6264ALP-12 HM6264A HM6264ALP-12L HM6264ALP-15 HM6264ALP-15L HM6264AP-10 HM6264AP-12 HM6264AP-15
    Text: HM6264A Series - 8192-word x 8-bit High Speed CMOS Static RAM Features Low-power standby — 0.1 mW typ — 10 jiW (typ) L-/LL-version Low power operation — 15 mW/MHz (typ) Fast access time — 100/120/150 ns (max) Single +5 V supply Completely static memory


    OCR Scan     		PDF HM6264A 8192-word HM6264AP-10 600-mil, 28-pin HM6264AP-12 DP-28) HM6264AP-15 HM6264ALP-10 HM6264ALP-12 HM6264ALP-10L HM6264ALP-12L HM6264ALP-15 HM6264ALP-15L

    MCM6264

    Abstract: mcm6264p20 MCM6264BP25 MCM6264BP
    Text: MOTOROLA H SEM ICO NDUCTO R TECHNICAL DATA MCM6264 8K x 8 Bit Fast Static RAM The MCM6264 is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim ­ ing strobes, while CMOS circuitry reduces power consum ption and provides tor


    OCR Scan     		PDF MCM6264 MCM6264 300-mil CM6264P15 MCM6264P20 MCM6264BP25 MCM6264BP35 MCM6264NJ15 MCM6264BP

    MS6264A25NC

    Abstract: MS6264A-25SC MS6264A-20NC MS6264A20NC MS6264AL-20PC MS6264A-20RC MS6264A-20PC P28-2 MS6264A-25NC s286
    Text: MOSEL MS6264A 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The MOSEL MS6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. It is built with


    OCR Scan     		PDF MS6264A 825mW MS6264A 536-bit PID002C MS6264A-20PC P28-1 MS6264A-20NC MS6264A25NC MS6264A-25SC MS6264A20NC MS6264AL-20PC MS6264A-20RC P28-2 MS6264A-25NC s286

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM6264C Advance Information 8K x 8 Bit Fast Static RAM The MCM6264C is fabricated using M otorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or tim­ ing strobes, while CMOS circuitry reduces power consumption and provides for


    OCR Scan     		PDF MCM6264C 6264C MCM6264CP12 MCM6264CP15 MCM6264CP20 MCM6264CP25 MCM6264CP35 CM6264CJ12 CM6264CJ15