STATIC INDUCTION TRANSISTOR Search Results

SIT Static Induction Transistor

Abstract: sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30
Contextual Info: NEW PRODUCTS UPDATE T O K lii Small-sized Static Induction Transistor SIT with high withstand voltage 'T - S I - i', led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high

tokin sit transistor

Abstract: SIT Static Induction Transistor 58AA Static Induction Transistor SIT tokin Tokin* SIT static induction transistor 9936 transistor SIT transistor transistor sit
Contextual Info: TOKIN CORP NEW PRODUCTS UPDATE • 'iQbTbBb 0 0 0 1 0 5 1 1 4 1 ■ TOAI 54E D TQKIfl Small-sized Static Induction Transistor SIT with high withstand voltage 'T -S I -ii, led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high

SIT Static Induction Transistor

Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
Contextual Info: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p ­ m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.

electrolytic capacitor, .1uF

Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
Contextual Info: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

0150SC-1250M

Contextual Info: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

SIT Static Induction Transistor

Abstract: Static Induction Transistor Static Induction Transistor SIT "static induction transistor"
Contextual Info: AQV234 PhotoMOS RELAYS HS High Sensitivity Type 1-Channel (Forni A) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control

electrolytic capacitor, .1uF

Abstract: z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor 0150SC-1250M
Contextual Info: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of

Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

J294

Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W
Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

pwm pulse circuit from PIC to inverter

Abstract: pure hardware delay in 8051 microcontroller THREE PHASE INVERTER PROGRAMMING LOGIC SA4828 sawtooth wave generator by 8051 8051 pure sine PWM tms320 motor control PWM Inverter using PIC Microcontroller three phase induction motor theory of microprocessor 8051
Contextual Info: SA4828 SA4828 3-Phase Pulse Width Modulation Engine Replaces November 1999 version, DS4204-3.2 DS4204-4.0 January 2000 The SA4828 PWM engine has been designed to provide waveforms for the control of variable speed AC induction motors, static and uninterruptible power supplies and other forms

electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

SIT Static Induction Transistor

Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

PWM Inverter using PIC Microcontroller

Abstract: SA4828 MP28117 pure sine wave inverter circuit diagram A4828
Contextual Info: SA4828 @ MITEL 3-Phase Pulse Width Modulation Engine SEMICONDUCTOR Advance Information Supersedes January 1998, version DS4204-2.4 The SA4828 PWM engine has been designed to provide w aveform s for the control of variable speed AC induction mo­ tors, static and uninterruptible power supplies and other forms

tokin

Abstract: Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin
Contextual Info: TOKIN CORP NEW PRODUCTS UPDATE 54E D • *ìGb7b2b D D G 1 Q S G 202 H I T O A I T O K in TOKIN B-SIT New TBM Series led. Outline • TOKIN is offering a new series of normally-off Bipolar mode Static Induction Transistor B-SIT constructed using small-sized molded packages in a Darlington configuration.

BTB06

Abstract: induction heating circuits static relays
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 BTB06 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 6 A 3. GATE VDRM/VRRM 600 and 800 V IGT(Q1) 5 to 50 mA 123 DESCRIPTION A1 A2 G Suitable for AC switching operations, the BTB06 series can be used as

btb12 Triac motor speed control

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 BTB12 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 12 A 3. GATE VDRM/VRRM 600 V IGT(Q1) 5 to 50 mA DESCRIPTION The BTA/BTB12 and T12 triac series is suitable for general purpose AC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 BTB06 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 6 A 3. GATE VDRM/VRRM 600 and 800 V IGT(Q1) 5 to 50 mA DESCRIPTION Suitable for AC switching operations, the BTB06 series can be used as

TRIAC BTB12 600

Abstract: BTB12 BTB12 TRIAC btb12 Triac motor speed control triac to220 bta btb12 application note static relays snubberless triac to220 triac btb12 induction heating circuits
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 BTB12 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 12 A 3. GATE VDRM/VRRM 600 V IGT(Q1) 5 to 50 mA 123 DESCRIPTION A1 A2 G The BTA/BTB12 and T12 triac series is suitable for general purpose AC

Contextual Info: Product Qualification Package CGD944C 870 MHz, 25 dB Gain power doubler amplifier Rev. 02 — December 29, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD944C power doubler

Contextual Info: Product Qualification Package CGD942C 870 MHz, 23 dB Gain power doubler amplifier Rev. 02 — December 29, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD942C power doubler

Contextual Info: Product Qualification Package CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 02 — December 29, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGY888C push pull CATV

smd 2xY

Abstract: unipolar transistor magnetic sensor SMD Hall sensors Hall 221 micronas hall 203 SMD Hall C smd hall smd hall sensor hall smd magnetic flow meter
Contextual Info: PRODUCT INFORMATION HAL 2xy April/2009 HAL 2xy Low-Cost Hall-Effect Sensor Family The HAL 2xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor.