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A1YA Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014 Contextual Info: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	ST3401M ST3401M OT-23-3L -30V/-4 -30V/-3 STP3401M A1YA ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014	PDF
Contextual Info: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	ST3401M23RG ST3401M23RG OT-23-3L -30V/-4 -30V/-3 STP3401M23RG	PDF

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Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014
Contextual Info: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

ST3401M ST3401M OT-23-3L -30V/-4 -30V/-3 STP3401M A1YA ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014

PDF

Contextual Info: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

ST3401M23RG ST3401M23RG OT-23-3L -30V/-4 -30V/-3 STP3401M23RG

PDF