sdt12303
Abstract: No abstract text available
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 50 60 70 80 7.0 8.0 8 8.0 8.0 10 10 10 10 10 ~eneral:seml SDT7809 SDT7809 SDT7809 BUX17B BUX17B SDT14204 SDT14304 SDT14304 XGSR10030 Solltron PPC Product Sid St Dvcs GE Solid St NthAmerSemi
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2N6575
PTC6674P
2N6931
2N6250
RJH6674
2N1814
2N2114
SDT13301
SDT13201
sdt12303
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2N2773
Abstract: J175 BUS24A
Text: POWER SILICON NPN Item Number Part Number Min I C 5 10 15 20 Semicoa PPC Product Solitron See Index Sid St Dvcs See Index See Index Semelab Solitron PPC Product 30 30 30 30 30 30 30 30 30 30 150 150 150 150 160 160 160 175 175 175 10 15 15 20 20 20 20 30
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3204AE
StR-5/16
2N2773
J175
BUS24A
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on 4508 TRANSISTOR
Abstract: BUX87 on 4508 ic 4508 transistor 4508 NPN POWER TRANSISTOR SOT-32 4508 Group 0016114E bux87 to126
Text: BUX87 High voltage NPN power transistor Features • High voltage capability 450 V VCEO ■ Minimum lot-to-lot spread for reliable operation ■ High DC current gain Applications ■ Flyback and forward single transistor low power converters 3 2 1 SOT-32
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BUX87
OT-32
BUX87
on 4508 TRANSISTOR
on 4508
ic 4508
transistor 4508
NPN POWER TRANSISTOR SOT-32
4508 Group
0016114E
bux87 to126
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BUX78
Abstract: st marking code TO-257 transistor 257
Text: BUX78ESY BUX78HR Hi-Rel PNP bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 31 TO-257 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified
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BUX78ESY
BUX78HR
O-257
BUX78HR
O-257
BUX78
st marking code
TO-257
transistor 257
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BUX77
Abstract: st marking code BUX77HR
Text: BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL
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BUX77ESY
BUX77HR
O-257
BUX77HR
O-257
BUX77
st marking code
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bux98A
Abstract: JESD97
Text: BUX98A High power NPN transistor Features • High voltage capability ■ High current capability ■ Fast switching speed 1 Applications 2 ■ High frequency and efficency converters ■ Linear and switching industrial equipment TO-3 Type R Description The BUX98A is a multi-epitaxial mesa NPN
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BUX98A
BUX98A
JESD97
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BUX48A
Abstract: BUX48 BUX48 ST ST IC date code marking JESD97 transistor bux48 bux48a st
Text: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power
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BUX48
BUX48A
BUX48
BUX48A
BUX48 ST
ST IC date code marking
JESD97
transistor bux48
bux48a st
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Untitled
Abstract: No abstract text available
Text: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed s ct u d o 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power
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BUX48
BUX48A
BUX48
BUX48A
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Untitled
Abstract: No abstract text available
Text: BUX98A High power NPN transistor Features • High voltage capability ■ High current capability ■ Fast switching speed s ct u d o 1 Applications 2 ■ High frequency and efficency converters ■ Linear and switching industrial equipment r P e t e l
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BUX98A
BUX98A
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40G120
Abstract: BU124 2SD745 BD141
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 SML7611 SDT7806 SDT7806 2N1811 2N2111 SDT7206 SDT7206 SDT7910 SDT791 0 SDT791 0 BU124 BU124 BU124 BU124A BU124A DTL8753 2N6262 BUX17 BUX17 WXlT 55 60 65 70 75 80 85 90 SDT7736 SDT7736
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O-218
O-218var
O-247S
O-218M
O-218AA
40G120
BU124
2SD745
BD141
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SKC10C70
Abstract: SKC10A75 BUX8 2SC2650 SKC10A70 2SC330 SGSIF441
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 1814-3502 1814-3505 SPT4624 2SC1468 2N6251 STIPl755 TIPl755 TIPl755 ~~~~g~01 35 40 1814-3702 1814-3705 BUT12 (A) BUn2 (A) BUn2 (A) SKC10A70 SKC10A75 SKC10C70 S~~~~3~~ 45 50 BUX80 SMl13303 2SC1469
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2N6588
1500n
O-218AC
O-218var
O-204AA
O-247S
lu-66
SKC10C70
SKC10A75
BUX8
2SC2650
SKC10A70
2SC330
SGSIF441
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BU1040
Abstract: ir431 IR430 2SC1865 IR423 BU104 2sc1865 nec ir411 RCA1B09 RCA410
Text: POWER SILICON NPN Item Number Part Number I C • 5 10 20 2S0917 SOT31303 2N6510 BU406 2SC3591 RCA1B04 2SC3175 2SC3176 BUY18S lR4TO" 25 30 35 · 40 45 50 55 60 65 70 75 · 80 RCA410 SML31305 SOT31305 2N6511 B0550B 2SC1864 2SC1867 RCA1B05 BUX62 SK3217 RCA1B09
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-f40J
BU1040
ir431
IR430
2SC1865
IR423
BU104
2sc1865 nec
ir411
RCA1B09
RCA410
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but46a
Abstract: PEC730
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 -30 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11 SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 ~~6~~1SK 35 40 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF BUX46A
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OT430
OT431
2N5241
OTS431
STA9364
STS430
but46a
PEC730
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PT8809
Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 NA71U NA71W KT921 A KT921B 2N5785 2N5784 BUX49 BUX49 NthAmerSemi SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech Hitachi Ltd Hitachi Ltd Hitachi Ltd Semelab NthAmerSemi Matsushita
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SPC411
STS411
PTC403
PTC403P
PTC409
PTC409P
PTC402
PTC402P
SPC402
PTC423
PT8809
trw rf
2SC1964
BUX51
dts411
KT921A
2U 37 diode
BUX49
KT936A
40340
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KT835A
Abstract: b0330 MJ032 MJ-03 b0362 2SA699A matsua 2N3171 KT83 kt835 M0810
Text: POWER SILICON PNP Item Number Part Number 10 15 20 25 30 >= 1 A, SK3624 2N6421 MJ3584 BUX66A BUX66A 2N6211 MJ3585 2N6422 MJ4240 MJ4240 2 2 BUX66B BUX66B BUX66C BUX66C 2N6212 2SA1009M SPT6145 2SA1009K 2SA1009J 2 2N6213 2N6214 2SA1009AM 2SA1009AL 2SA1009AK 2SA1412Z
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3000n
126var
202var
KT835A
b0330
MJ032
MJ-03
b0362
2SA699A matsua
2N3171
KT83
kt835
M0810
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BU25SA4WGWL
Abstract: BU2FSA4WGWL
Text: Datasheet CMOS LDO Regulators for Portable Equipments 1ch 200mA CMOS LDO Regulators BUxxSA4 series ●General Description BUxxSA4 series are high-performance CMOS LDO regulators with output current ability of up to 200-mA. These devices have excellent noise and load response
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200mA
200-mA.
BU25SA4WGWL
BU2FSA4WGWL
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Untitled
Abstract: No abstract text available
Text: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •
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BUX48,
BUX48A
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transistor 17609
Abstract: No abstract text available
Text: G E SO LI D 3 Ô 7 5 08 1 STATE G E S O L I D ST AT E QÏ E~ 3fl7SDfll DD17t,Dfl □ 0 1E 17608" " D T • Si - I S' _ Pro Electron Power Transistors File N um ber 1172 Silicon N-P-N Switching Transistor BUX21 TERM INAL DESIGNATIONS For Switching Applications in
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DD17t
BUX21
TQ-204AA
3A750A1
DD17blE
3036IRI
transistor 17609
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D895
Abstract: BD 895 bdw 34 a
Text: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current
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BD895,
BD895A
BD897,
BD897A,
BD899,
BD899A,
BD901
T-33-29
-220AB
BD895
D895
BD 895
bdw 34 a
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T726
Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
Text: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature
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T-33-29
BDX53,
BDX53A,
BDX53B,
BDX53C
T0-220AB
BDX63
BDX63A
BDX53B
BDX53C
T726
1N914
BDX53
BDX53A
60si50
ION-M
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TMS3401
Abstract: SPVU001 MD653 SPVU001B ls 010s 100s MS3401
Text: TM S3 4 0 1 0 GRAPHICS SY ST EM PROCESSOR SPVS002C • • • TOP VIEW 1 3 2 ns . . ( T M S 3 4 0 1 0 6 0 ) 1 6 0 ns . . ( T M S 3 4 0 1 0 - 5 0 ) 2 0 0 ns . (T M S 3 4 0 1 0 -4 0 ) Fully P rog ra m m a b le 32 -B it General-Purpose P roc e ss or w i t h 1 2 8 - M e g a b Y tc A d d re s s
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SPVS002C
TMS3401
SPVU001
MD653
SPVU001B
ls 010s 100s
MS3401
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Untitled
Abstract: No abstract text available
Text: .7*113237 0026=137 3 W Ê Fi I '33>~iS S C S - T H O M S O N [M û œ a J tm M M S S G S-TH0MS0N BUX 25 3GE D NPN SILICON TRANSISTOR • HIGH SPEED, HIGH VOLTAGE, HIGH POWER TRANSISTOR ■ SWITCHING AND AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Sym bol
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T-33-15
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Jedec TO-3
Abstract: G-4161 BUX22 G40A
Text: S = “ 7 S G S - T H O M S O N 7# B U X 22 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUX22 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
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BUX22
G-4160
BUX22
G--4161
G-4065M
Jedec TO-3
G-4161
G40A
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BU 450 bdx
Abstract: l75b
Text: TEXAS INSTR Î0PTÔ3D F f lT b l7 5 b Ö 9 6 1 7 2 6 T EX A S IN S T R <OPTO) 0 0 3 ^ ^ 62C 3 6 6 6 9 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS T NOVEMBER 1983 - REVISED OCTOBER 1984 4 0 W at 2 5 ° C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current
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BUX84,
BUX85
T0-22QAB
hti73
T-33-//
BU 450 bdx
l75b
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