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    ST 9012 G Search Results

    ST 9012 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SER1590-122MLD Coilcraft Inc General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT Visit Coilcraft Inc
    SER1590-122 Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    SER1590-122ML Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    SER1590-122MLB Coilcraft Inc General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT Visit Coilcraft Inc
    ISL9012IRMNZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation

    ST 9012 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c 9012

    Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF

    transistor c 9012

    Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN

    transistor c 9012

    Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012

    transistor c 9012

    Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor

    transistor c 9013

    Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 50MHz transistor c 9013 transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013

    NPN 9013

    Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF 50MHz NPN 9013 transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013

    transistor BR 9013

    Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


    Original     		PDF

    6-60E

    Abstract: N 27 E
    Text: 10 M A T E R IA L NO. 836149012 ENG. NO. 83614-9012 .965 24.51 1.185 , -MAX 30.10 • .810 20.57 ' t>n J08 7.82 .260 e 6.60 TOP OF PCB .27 6.78 1.19 4 PLACES R EF RECOMMENDED P A N E L CUT-OUT .050/1.27 PANEL THICKNESS MAX. 2-56 JAC KPO ST 2 PLA C E S 4.72


    OCR Scan     		PDF t4/15 SD-83614--001 6-60E N 27 E

    P5-83421-9000

    Abstract: SD-83614-001
    Text: 10 M A T E R IA L NO. 836149012 ENG. NO. 83614-9012 r r .27 6.78 R EF P A N E L CUT-OUT .050/1.27 PAN EL THICKNESS MAX. -56 JAC KPO ST 2 PLA C E S U86 -MAX 4.72 .41 10.3 flnnnmyinnnnn. R EF .050 RECOMMENDED P A N E L THICKNESS TYP • .025 C 0.64 .ES 4 PLACED


    OCR Scan     		PDF P5-83421-9000 SD-83614-001

    c20yw

    Abstract: AD9012 AD9768 AD9012AN
    Text: A N AL OG D E V I C E S INC 4SE » Bl OfilbflGO a 0 3 Q b ä M ä • AN ALO G D E V IC E S ANA High Speed 8-Bit TTL A/D Converter T-51-/0-08 AD9012 FEATURES 100MSPS Encode Rate Very Low Input Capacitance - 16pF Low Power - 1W TTL Compatible Outputs MIL-STD-883 Compliant Versions Available


    OCR Scan     		PDF D030bà T-51-/0-08 AD9012 100MSPS MIL-STD-883 0Q30bRQ c20yw AD9768 AD9012AN

    L74A

    Abstract: AD9012 ladder logic for analog in put AD9611
    Text: AN ALO G D E V IC E S High Speed 8-Bit TTL A/D Converter AD9012 FEATURES 100MSPS Encode Rate Very Low Input Capacitance - 16pF Low Power - 1W TTL Compatible Outputs MIL-STD-883 Compliant Versions Available F U N C T IO N A L BLO CK DIAGRAM AD9012 AN A LO G IN I


    OCR Scan     		PDF AD9012 100MSPS MIL-STD-883 AD9012 74as04 L74A ladder logic for analog in put AD9611

    Untitled

    Abstract: No abstract text available
    Text: AtO-2 6.0+o 1 CM CO 7.62 to 2 io CM io o P = 2 . 5 4 t o 03 9 .7 to -3 05 A A A A A A A A O ON 1 1 . 4 ±0.03 2 3 4 5 6 7 8 0 . 6 to-Q 3 WIRING DIAGRAM 1 2 3 4 5 P.C.B. LAYOUT L=2.54x P-1 9001 9002 9003 9004 9005 9006 9007 9008 9009 9010 9012 TG TG TG TG


    OCR Scan     		PDF LULU20+ LUIU20+ 90/S0

    T52C

    Abstract: No abstract text available
    Text: MICRON M T52C 9012 1K x 9 FIFO FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • • • • • Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typical (standby ; 350mW typical


    OCR Scan     		PDF 350mW 28-Pin MTS2C9012 10-BYTE MT52C9012 T52C

    Untitled

    Abstract: No abstract text available
    Text: 4 P/N APPLICABLE NOTE S -1 -1 S F -1 C C -1 C C S F -2 -2 S F -2 C C -2 C C S F -3 -3 S F -3 C C -3 C C S F 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 3 (0 A) .143 .143 .143 .143 .088 .088 .088 .088 .143 .143 .143 .143 MIN MIN MIN MIN MIN MIN MIN MIN


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 16 M 2 M x 8 BIT MBM29F017-90/-12 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash


    OCR Scan     		PDF MBM29F017-90/-12 48-pin 40-pin F48030S MBM29F017 LCC-40P-M02) 40052S

    IRf 9024

    Abstract: 9H20 9S05A ST 9014 C
    Text: SSI • GATES, BUFFERSAND INVERTERS STANDARD HIGH SPEED SUPER HIGH SPEED SCHOTTKY tpd = 8 ns Pd = 10 mW per Gate tpd = 6 ns Pd = 22 mW per Gate tpd = 3 ns Pd " 19 mW per Gate ^ 0°C to + 7 0 °C and - 5 5 ° t o +125° C V 9002 0° to +70° C - 5 5 ° to +125°C


    OCR Scan     		PDF 00/74H 9H01/74H01 00/54H 9H01/54H01 9S00/74S00 9S00/54S00 9S03/54S03 9S03/74S03 10/74H 22/74H IRf 9024 9H20 9S05A ST 9014 C

    74LS186

    Abstract: SN74LS165 54ls166 IC 74165 transistor c 9012 74165 block diagram Transistor 9012 ax
    Text: TTL MSI TYPES SN5416S, SN54LS165, SN74165, SN74LS165 PARALLEL-LOAD 8-BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E


    OCR Scan     		PDF SN5416S, SN54LS165, SN74165, SN74LS165 LS165 SN54165, SNS4LSI85, SN74165 74LS186 54ls166 IC 74165 transistor c 9012 74165 block diagram Transistor 9012 ax

    marking AHF

    Abstract: No abstract text available
    Text: PRELIMINARY p ilC R O N M T52C 9012 FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • OPTIONS • Tim ing 15ns access 20ns access 25ns access 35ns access PIN ASSIGNMENT Top View 28-Pin SOJ (A-9, A -11) (E-8) W|fl ^ 09 |2 Dd I 3


    OCR Scan     		PDF 28-Pin 10-BYTE MT52C9012 11/SI marking AHF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KTC9013 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity. • Complementary to K TC 9012. DIM G -1 M A X IM U M RATING Ta=25°C


    OCR Scan     		PDF KTC9013

    I80386

    Abstract: KYOCERA 50Mhz oscillator 45 MHz clock oscillator intel 80386
    Text: KYOCERA INTL/ A V X CORP 5 7E 5 2 ^ 0 7 J> D 0 0 4 G liS Q M S IKAVX M C SKyC KER a 386-HC Crystal Clock Oscillators for Intel 80386 i80386 Compatible - f 0 : 24, 32, 40, 50 MHz FEATURES HOW TO ORDER 1 World’s only clock oscillator specifi­ cally designed to meet the rigorous


    OCR Scan     		PDF D004Gl 386-HC i80386 150pF. 150pF 50MHz 0000M 150PF KYOCERA 50Mhz oscillator 45 MHz clock oscillator intel 80386

    2n120

    Abstract: Transistor 9012 ax 9012 transistor
    Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan     		PDF 2N120 7S222 Transistor 9012 ax 9012 transistor