ST 120 TRANSISTOR Search Results

2N1893

Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N1893 Features • • • • 120 Volts 0.5 Amps Meets MIL-S-19500/182 Collector-Base Voltage 120 Collector Current: 0.5 mA Fast Switching 30 nS NPN BIPOLAR TRANSISTOR Maximum Ratings

Contextual Info: Ordering number: EN 5006 | Thick Film Hybrid 1C STK390-120 1-Channel + Supply Switching Convergence Correction Circuit lc max = 4A Overview Package Dimensions The ST K 390-120 is a high-accuracy convergence correction circuit hybrid IC designed to complement the

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 120

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

2SD882U-P

Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

ic 4000

Abstract: 2SD882U-P 2SD882U
Contextual Info: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V

BFQ28

Abstract: Q62702-F527 CJCO D 843 Transistor
Contextual Info: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

Contextual Info: TEXAS INSTR -COPTO} bâ 8961726 TEXAS IN ST R DE | f l T b l ? a b 0037Dbl 62C 3 7 0 6 1 OPTO 4 D TIPL762, TIPL762A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 7"-33 - / 3 120 W at 25°C Free-Air Temperature 6 A Continuous Collector Current

2SD1763

Abstract: 2Sb1186 2SD1763 transistor
Contextual Info: 7-, £ / T ransistors h -7 > v 2SD1763 m X t° $ * V 7 U NPN y >J□ > N7 > y 7 $ Epitaxial Planar NPN Silicon Transistor flU§>JfcS^^1iffl/LowFreq. Power Amp. 2SD1763 • • w* 1 rfjiE l/D im e n s io n s U n it: mm) ¡IitH T St>-S o B V ce o= 120 V <M i tO. I

2SD797Y

Abstract: 2SD1041 str5 1561-1008 pt2909 1561-1010 IR802
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (HZ) (A) (s) Max (Ohms) 80 80 80 80 80 80 80 80 80 80 175 175 175 175 175 175 175 175 175 200 80 200 V (BR)CEO PD (CE)sat Toper Max (°C)

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

Contextual Info: 2STA1694 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO =-120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC 3 2 Applications ■

ST16N10

Abstract: 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package
Contextual Info: ST 16N10 ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using

2STA1694

Abstract: 2STC4467 JESD97
Contextual Info: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-3P Audio power amplifier

2STA1694

Abstract: 2STC4467
Contextual Info: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 1 Applications ■ TO-3P Audio power amplifier

2STA1694

Abstract: 2STC4467 JESD97
Contextual Info: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC 3 2 Applications ■ 1 TO-3P Audio power amplifier

Contextual Info: 2STC4467 High power NPN epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO =120V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC 3 2 Applications ■

ESM2040DV

Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50

Contextual Info: 2STC4467 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o 3 Applications ■

Contextual Info: 2STA1694 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -120 V ■ Complementary to 2STC4467 ■ Fast-switching speed ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC s ct u d o 3 Applications ■

SOT23-6L

Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
Contextual Info: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

JESD97

Abstract: M252 SD56120M
Contextual Info: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■

Contextual Info: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■