ESM2 Search Results

ESM28

Contextual Info: SULLINS PART NUMBER ESM28DRXN SULLINS ELECTRONICS CORP SAN MARCOS, CA 760−744−0125 FAX 760−744−6081 C = 4.652+−.015 [118.16+−0.38] B = 4.532+−.008 [115.11+−0.20] A = 4.212+−.008 [106.98+−0.20] F = 0.438+−.005 [11.13+−0.13] bsp MARKING:

Contextual Info: ESM245-1000 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current60 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)60

ESM2030

Abstract: ESM2030DV
Contextual Info: ESM2030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

Contextual Info: ESM2040DV Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)400 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain. @I(C) (A) (Test Condition)

CA510

Contextual Info: SULLINS PART NUMBER ESM22DRMH SULLINS ELECTRONICS CORP SAN MARCOS, CA 760−744−0125 FAX 760−744−6081 E D C B A = = = = = 4.280+−.020 4.030+−.010 3.717+−.015 3.598+−.008 3.276+−.008 [108.71+−0.51] [102.36+−0.25] [94.41+−0.38] [91.39+−0.20]

Contextual Info: /T T SGS'THOMSON *J M . llD g[3 llLi TO@E!lD(gi ESM243-50 -* 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME (Metric thread ■ HIGH SURGE CURRENT CAPABILITY ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS DO 5

esm2012dv

Contextual Info: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

transistor ESM 30

Abstract: 80fiV transistor ESM ESM25 C12S dss2 ESM25A L1T voltage C12SS amplificateur BF
Contextual Info: *ESM 25 *ESM25A D U AL FIELD -EFFECT TRANSISTORS, SILICON. N C H A N N EL DOUBLES TRANSISTORS A E F F E T D E CHAMP, SILICIUM. CANAL N 5ji Preferred device D isp o sitif recommandé - L F amplification Amplification BF 25 mV max. V GS1'V GS2 120 mV max.

ESM2030DV

Contextual Info: ESM2030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM243-50

Contextual Info: £ÿj SGS-TTfOMSON ESM243-50 -> 400 FAST RECOVERY RECTIFIER DIODES • ■ ■ ■ VERY FAST RECOVERY TIME HIGH SURGE CURRENT CAPABILITY VERY LOW FORWARD RECOVERY TIME VERY LOW RECOVERED CHARGE APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCHMODE POWER SUPPLY

HF 4093 N

Abstract: 264 bf ESM 510 BF245 BF247 BF256 C11M ms 4092 fet BC264 ESM4091
Contextual Info: n channel field effect transistors — plastic case transistors à effet de champ canal n — boîtier plastique th o m s o n -c s f fet dual transistors, n channel transistors double à effet de champ-canal n Type ESM25 ESM 25 A 2N 5198 2N 5199 Application

Contextual Info: ESM245-100 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current60 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)60

Contextual Info: ESM245-1000R Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current60 V(RRM)(V) Rep.Pk.Rev. Voltage1000 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5

ESM2030DF

Abstract: ESM2030DV BYT11 S125 ESM2 T100C SGS
Contextual Info: 3QE D m 7 cJ5ciS37 QQ3G42b 4 SGS-THOMSON HLKgTMKS ESM2030DF ESM2030DV S G s-thomson 1 *3 3 -3 5 NPN DARLINGTON POWER MODULE l • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE

Contextual Info: r Z S 7 ^7# G S - T H O M S O N MDœmiCTIfMDIg ESM2030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT

ESM28

Abstract: CA510
Contextual Info: SULLINS PART NUMBER ESM28DRMH SULLINS ELECTRONICS CORP SAN MARCOS, CA 760−744−0125 FAX 760−744−6081 E D C B A = = = = = 5.216+−.020 4.966+−.010 4.653+−.015 4.534+−.008 4.212+−.008 [132.49+−0.51] [126.14+−0.25] [118.19+−0.38] [115.16+−0.20]

ESM2012DV

Contextual Info: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM2012DV

Contextual Info: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: rz7 SGS-THOMSON ^7# ESM243-50 -> 400 FAST RECOVERY RECTIFIER DIODES • ■ . . VERY FAST RECOVERY TIME HIGH SURGE CURRENT CAPABILITY VERY LOW FORWARD RECOVERY TIME VERY LOW RECOVERED CHARGE A PP LIC A TIO N S ■ DC AND AC MOTOR CONTROL ■ SW ITCHM ODE POWER SUPPLY

Contextual Info: ESM2040D Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)400 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain. @I(C) (A) (Test Condition)

ESM2012DV

Contextual Info: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE

ESM2012DV

Abstract: esm20
Contextual Info: ESM2012DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

RECTIFIER DIODES SGS

Abstract: ESM243-50
Contextual Info: /= 7 SGS'THOMSON * 7 /. M lIiä m iM M lig S ESM243-50 -> 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS ■ DC AND AC MOTOR CONTROL