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    Logical Systems PA20SS-OT-3

    ADAPTER 20-SSOP TO 20-DIP
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    DigiKey PA20SS-OT-3 Bulk 1 1
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    Fischer Elektronik GmbH & Co KG SK-470-25-STS-SOT-32

    Extruded Heatsink for PCB mounti
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    DigiKey SK-470-25-STS-SOT-32 Bulk 50
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    • 100 $1.0396
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    Fischer Elektronik GmbH & Co KG SK-469-50-STS-SOT-32

    Extruded Heatsink for PCB mounti
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    DigiKey SK-469-50-STS-SOT-32 Bulk 5
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    Fischer Elektronik GmbH & Co KG SK-470-50-STS-SOT-32

    Extruded Heatsink for PCB mounti
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    DigiKey SK-470-50-STS-SOT-32 Bulk 50
    • 1 -
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    • 100 $0.945
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    Fischer Elektronik GmbH & Co KG SK-469-25-STS-SOT-32

    Extruded Heatsink for PCB mounti
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    DigiKey SK-469-25-STS-SOT-32 Bulk 5
    • 1 -
    • 10 $3.286
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    SSOT3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    interfacing PIC18F4550 with CAN

    Abstract: PIC18F4550 mplab CAN bus MCP2515 source code pic18f4550 assembly PIC18f4550 assembly programming schematic diagram of pic18f4550 DS51757A usb connection to PIC18f4550 pin diagram of PIC18f4550 mcp2515 source KT143-3
    Text: MCP2515 CAN Bus Monitor Demo Board User’s Guide 2008 Microchip Technology Inc. DS51757A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		MCP2515 DS51757A DS51757A-page interfacing PIC18F4550 with CAN PIC18F4550 mplab CAN bus MCP2515 source code pic18f4550 assembly PIC18f4550 assembly programming schematic diagram of pic18f4550 DS51757A usb connection to PIC18f4550 pin diagram of PIC18f4550 mcp2515 source KT143-3 PDF

    UCD90120

    Abstract: HPA650 UCD90910
    Text: User's Guide SLVU423 – December 2010 UCD90SEQ64EVM-650: 64-Pin Sequencer Development Board This user's guide describes the 64-pin Sequencer Development Board UCD90SEQ64EVM-650 for the following sequencer devices: UCD90120, UCD90124, UCD90120A, UCD90124A, UCD90910, and


    Original     		SLVU423 UCD90SEQ64EVM-650: 64-Pin UCD90SEQ64EVM-650) UCD90120, UCD90124, UCD90120A, UCD90124A, UCD90910, UCD90120 HPA650 UCD90910 PDF

    6 Pins Tact Push Button Switch

    Abstract: PIC12F683 MCP1630 pic12f683 development board kit MCP9700 12 lead ecg block diagram ecg manual ic 22uH SMD DS41211 10BQ060PBF
    Text: MCP1630 Coupled Inductor Boost Converter Demo Board User’s Guide 2006 Microchip Technology Inc. DS51612A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		MCP1630 DS51612A DS51612A-page 6 Pins Tact Push Button Switch PIC12F683 pic12f683 development board kit MCP9700 12 lead ecg block diagram ecg manual ic 22uH SMD DS41211 10BQ060PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		FDN339AN PDF

    fdn5618p

    Abstract: No abstract text available
    Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V


    Original     		FDN5618P fdn5618p PDF

    FDN302P

    Abstract: marking code 10 sot23 rca MIL ID SSOT-3
    Text: FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		FDN302P FDN302P marking code 10 sot23 rca MIL ID SSOT-3 PDF

    SSOT-3

    Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
    Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		FSB649 SSOT-3 CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3 PDF

    FDN8601

    Abstract: No abstract text available
    Text: FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m: Features General Description „ Max rDS on = 109 m: at VGS = 10 V, ID = 1.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDN8601 FDN8601 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V


    Original     		FDN371N PDF

    SOT-23 w02

    Abstract: W02 SOT23 W02 sot 23 W02 sot-23 W02 sot t 5.5 w
    Text: April 1999 PAIRÇHILD S E M IC O N D U C T O R tm FDN359AN N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored


    OCR Scan     		FDN359AN OT-23 SOT-23 w02 W02 SOT23 W02 sot 23 W02 sot-23 W02 sot t 5.5 w PDF

    marking code 10 sot23

    Abstract: FDN308P
    Text: FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		FDN308P marking code 10 sot23 FDN308P PDF

    FSA642

    Abstract: FDMA1024NZ diagram circuit usb mp3 player with radio fm lcd CFL inverter circuit schematic diagram FAN5646 FDC610PZ block diagram 3x3 matrix keypad and microcontroller FDC658AP CFL 12v inverter circuit schematic diagram free pwm DC-DC SC70-5
    Text: PORTABLE SOLUTIONS w w w. f a i r c h i l d s e m i . c o m INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products


    Original     		PDF

    fdn359an

    Abstract: SOIC-16 SSOT-23 SSOT-3 SuperSOTTM -3
    Text: April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		FDN359AN OT-23 OT-23 fdn359an SOIC-16 SSOT-23 SSOT-3 SuperSOTTM -3 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    FDN338P

    Abstract: 187M
    Text: FDN338P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		FDN338P FDN338P 187M PDF

    sio lpc chip intel p4 motherboard

    Abstract: rdi-dmt-1206 980020 NAND RJMG-5312-11-01 Amphenol RJMG intel 810 MOTHERBOARD pcb CIRCUIT rdi DMT-1206 intel 810 MOTHERBOARD pcb CIRCUIT diagram c.i GD75232 smd 82801 g SCHEMATIC DIAGRAM
    Text: Intel 810 Chipset Design Guide June 1999 Order Number: 290657-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability


    Original     		PDF

    diode in48

    Abstract: IN58 diode SN105125
    Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit


    Original     		SBAU186 DDC264EVM DDC264EVM DDC264EVM. DDC264, 64-channel, 20-bit DDC264 DDC264EVMm diode in48 IN58 diode SN105125 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.


    Original     		FDN86246 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    5630 SOT23

    Abstract: FDN5630
    Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		FDN5630 5630 SOT23 FDN5630 PDF

    MCP1827-ADJ

    Abstract: smd pwm controller
    Text: MTD6505 3-Phase BLDC Sensorless Fan Controller Demonstration Board User’s Guide 2011 Microchip Technology Inc. DS52009A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		MTD6505 DS52009A DS52009A-page MCP1827-ADJ smd pwm controller PDF

    FSB560

    Abstract: FSB560A
    Text: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol


    Original     		FSB560/FSB560A FSB560 FSB560A OT-23) FSB560A PDF

    FDN340P

    Abstract: SOIC-16 FDN340P application note
    Text: November 1998 FDN340P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		FDN340P OT-23 FDN340P SOIC-16 FDN340P application note PDF