SSH10 Search Results

SSH10N60B

Contextual Info: SSH10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

SSH6N80

Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
Contextual Info: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65

DIODE S3c

Abstract: ssm10n70
Contextual Info: SAMSUNG SEM ICO NDUCTOR INC *- SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL * - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00

SSH10N90A

Abstract: MOSFET 10A
Contextual Info: N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V

mosfet 10a 800v

Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
Contextual Info: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V

SSH10N60A

Contextual Info: SSH10N60A Advanced Power MOSFET FEATURES B V d ss = 6 0 0 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-i A M ax. @ VDS = 600V

Contextual Info: Advanced SSH10N60A Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 600V

ssh10n70

Abstract: 10N70
Contextual Info: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • • • • • • • T O -3 P Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

irfs250a

Contextual Info: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A

mosfet yb

Abstract: SSH10N60A
Contextual Info: Advanced SSH10N60A P o w e r MOSFET FEATURES BV dss = • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

OA 161 diode

Abstract: SSH10N90A
Contextual Info: Advanced SSH10N90A Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V

SSH10

Contextual Info: SSH10N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 900 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ VOS= 900V

SSH10N60A

Contextual Info: SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V

SSH107

Abstract: SSH104
Contextual Info: SSH101 THRU SSH107 1.0 AMP SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 to 800 Volts CURRENT 1.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Fast switching speed SS .106 2.7 .098(2.5)

Contextual Info: SSH10N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V

SSH10N55

Abstract: SSH10N60
Contextual Info: N-CHANNEL POWER MOSFETS SSH10N60/55 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

8275-2

Abstract: 2355D SSH10N60A
Contextual Info: SSH10N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V

SSH10N70

Contextual Info: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • Low er Rds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SSH10N60B

Contextual Info: SSH10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

SSH10N90A

Abstract: gs 05
Contextual Info: SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V

SSH10N80A

Abstract: SSF10N80A
Contextual Info: SSH10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 0.95 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 700V

OIML C3

Abstract: OIMLR60
Contextual Info: SSH 单点式传感器 1. 产品特点： o 不锈钢材质 o 激光焊接密封，适用于恶劣环境 o 紧凑结构 o 适用于不锈钢防水秤以及化工， 食品和制药行业的过程称重控制 2. SSH 单点式传感器 技术指标： SSH 型号

SSV06

Abstract: SSV10 SSH06 SSH06 1-1437589-9
Contextual Info: S Series Sip Switches, Low Profile, Vertical and Right Angle S Series A FEATURES: MATERIAL SPECIFICATIONS: • End-to-end stackable in .100" center SSV/SLV versions Base .PPS 94V-0/Encapsulated Ceramic (SLV/SLH) Cover .PBT 94V-0

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier