SSF2816EBK Search Results

SSF2816EBK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Mosfet Abstract: SSF2816EBK Contextual Info: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V	Original	SSF2816EBK SSF2816EBK Mosfet	PDF
Contextual Info: SSF2816EBK DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V	Original	GDSSF2816EBK SSF2816EBK SSF2816E	PDF

Catalog Datasheet

Type

Document Tags

PDF

Mosfet

Abstract: SSF2816EBK
Contextual Info: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V

Original

SSF2816EBK SSF2816EBK Mosfet

PDF

Contextual Info: SSF2816EBK DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

Original

GDSSF2816EBK SSF2816EBK SSF2816E

PDF