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    SOP-8

    Abstract: SSF2616E
    Text: SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF SSF2616E SSF2616E Rating2000V 330mm 2500rameters) SOP-8

    Untitled

    Abstract: No abstract text available
    Text: SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF GDSSF2616E SSF2616E SSF2616E

    Mosfet

    Abstract: SSF2616E
    Text: SSF2616E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF SSF2616E SSF2616E SSF261e Mosfet