SSF2306
Abstract: "battery protection" D2306
Text: SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V
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SSF2306
SSF2306
OT-23
OT-23
180mm
"battery protection"
D2306
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Mosfet
Abstract: SSF2306
Text: SSF2306 30V N-Channel MOSFET D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic Diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V
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Original
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PDF
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SSF2306
SSF2306
OT-23
SSF23
950TYP
550REF
Mosfet
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