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    SSF2306

    Abstract: "battery protection" D2306
    Text: SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V


    Original     		PDF SSF2306 SSF2306 OT-23 OT-23 180mm "battery protection" D2306

    Mosfet

    Abstract: SSF2306
    Text: SSF2306 30V N-Channel MOSFET D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic Diagram ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V


    Original     		PDF SSF2306 SSF2306 OT-23 SSF23 950TYP 550REF Mosfet