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    Contextual Info: SSE90N06-10P 90A , 60V , RDS ON 9.9 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on)


    Original
    SSE90N06-10P O-220P O-220P 12-Aug-2011 PDF

    sse90n06-10p

    Contextual Info: SSE90N06-10P 90 A, 60 V, RDS ON 9.9 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density


    Original
    SSE90N06-10P O-220P O-220P 29-Nov-2010 sse90n06-10p PDF

    sse90n06-30p

    Contextual Info: SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS ON 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density


    Original
    SSE90N06-30P O-220P O-220P 29-Nov-2010 sse90n06-30p PDF

    105VGS

    Abstract: sse90n06
    Contextual Info: SSE90N06-15P 90 A, 60 V, RDS ON 10.5 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density


    Original
    SSE90N06-15P O-220P O-220P 29-Nov-2010 105VGS sse90n06 PDF