SS2x
Abstract: 150v 1A schottky diode SS115 SS13 SS15 SS22 SS23 SS25 SS29
Text: SS2x Series Features: • • • • • • • • • For surface mounted application. Easy pick and place. Metal to silicon rectifier, majority carrier conduction. Low power loss, high efficiency. High current capability, low VF. High surge current capability.
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SMB/DO-214AA
RS-481.
SS2x
150v 1A schottky diode
SS115
SS13
SS15
SS22
SS23
SS25
SS29
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S2M diode
Abstract: SS2x diode s2m DIODE S2B multicomp sma diode s1m sma
Text: SS2x Series Features: • • • • • • • • For surface mounted application. Glass passivated junction chip. Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. Plastic material. High temperature soldering: 260°C/10 seconds at terminals.
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SMA/DO-214AA
RS-481.
S2M diode
SS2x
diode s2m
DIODE S2B
multicomp sma
diode s1m sma
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SS2x
Abstract: No abstract text available
Text: SS2X GYM SS2X G Y M = = = = Specific Device Code Green Compound Year Work Month C08 C08
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Untitled
Abstract: No abstract text available
Text: SS2XL GYM SS2XL G Y M = = = = Specific Device Code Green Compound Year Work Month E08 E08
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Untitled
Abstract: No abstract text available
Text: .fi nie No. 4.20 I l I I II L U U U U U U T ]U IU IUI U IUIU IUIU UIIL ?op ~ ~ ~ ~ ~ ~ ~ ~ ~ r i J LJ ~ I SH E E T _Q_ 1 /1 InsulatorGlass fiTlwi thennoplastic plyestEr,aelfextin guishing UL 94 V-0,colonr hlndr,resistant to minenl adds, solvents, greases, oOs short time .
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s50gf
100VRMS/150VDC
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Untitled
Abstract: No abstract text available
Text: W9320 V . . . =* tie c lr o ü ic s Corp. ADPCM CODEC Table of Contents- 1. GENERAL 2. FEATURES. 2
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W9320
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Untitled
Abstract: No abstract text available
Text: SS22L - SS215L creat by art 2.0AMPS Surface Mount Schottky Barrier Rectifiers Sub SMA Features For surface mounted application Low-Profile Package Idea for automated pick & place High current capability, low VF High surge current capability
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260/10s
SS22L
SS215L
RS-481
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Untitled
Abstract: No abstract text available
Text: SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak
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SS210
SMB/DO-214AA,
MIL-STD-750,
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marking TA1S
Abstract: SS22L
Text: E SS22L - SS215L TAIWAN SEMICONDUC [Pb 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers Sub SWA RoHS COMPLIANCE kXfe'Jt Uj m é \ — L t Features ft 1 -+ ? ♦; o I :iz.ry ❖ For s u rg e s moun led apptica Ucn ❖ <' L o w -P io flla P a c k a g e ❖
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SS22L
SS215L
RS-481
SS215L)
marking TA1S
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Untitled
Abstract: No abstract text available
Text: 8 F ile Number Of Pins—1 X2.54 l U I 441 SHEET ±_Z1 MATERIALS Pin(Outer Sleeve): Brass,Machined,CuZn38Pb2 Clip(Contact Finger): Beryllium Copper,Heat Treated P lating(O uter Sleeve): Tin Plated: 2u” m /8 0 u ” N icke l,5 u m /2 0 0 u ” Tin Gold Plated: 2u” m /8 0 u ” Nickel,Full Gold
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CuZn38Pb2
m/80u
5um/200u
2um/80u
UL94Vâ
43mm/0
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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Untitled
Abstract: No abstract text available
Text: SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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SS24/D
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403A-03
Abstract: SS22 SS22T3 SS24 SS24T3 ss2410
Text: SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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SS24/D
403A-03
SS22
SS22T3
SS24
SS24T3
ss2410
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ru 94v0
Abstract: No abstract text available
Text: SS22L thru SS215L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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SS22L
SS215L
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308031
ru 94v0
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SS24 SMB
Abstract: marking SS24
Text: SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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0E-01
0E-02
0E-03
0E-04
0E-03
SS24 SMB
marking SS24
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Untitled
Abstract: No abstract text available
Text: SS22 - SS215 creat by art 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Features For surface mounted application Easy pirk and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF
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SMB/DO-214AA
J-STD-020D,
RS-481
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Untitled
Abstract: No abstract text available
Text: SS22 thru SS215 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020
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SS215
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
JESD22-B10
SS29-SS215
SS22-SS24
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Untitled
Abstract: No abstract text available
Text: SS22M thru SS24M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and
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SS22M
SS24M
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308026
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Untitled
Abstract: No abstract text available
Text: SS22L thru SS215L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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SS22L
SS215L
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308031
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Untitled
Abstract: No abstract text available
Text: SS22L - SS215L 2.0AMPS Surface Mount Schottky Barrier Rectifiers Sub SMA Features For surface mounted application Low-Profile Package Idea for automated pick & place High current capability, low VF High surge current capability Plastic material used carriers Underwriters
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SS22L
SS215L
RS-481
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N8097BH
Abstract: n8097bh-plcc 8X9X-90 p8095 270361 N8397BH 809xbh P8095BH-P-DIP
Text: m m m m s m 809XBH/839XBH/879XBH ADVANCED 16-BIT MICROCONTROLLER WITH 8- OR 16-BIT EXTERNAL BUS Automotive • Extended Automotive Temperature Range -40 °C to + 125°C Case ■ High Performance NMOS Process ■ High-Speed I/O Subsystem ■ Full Duplex Serial Port
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809XBH/839XBH/879XBH
16-BIT
10-Bit
68-Pin
48-Pin
N8097BH
n8097bh-plcc
8X9X-90
p8095
270361
N8397BH
809xbh
P8095BH-P-DIP
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MRA400x
Abstract: SS2x B340A ES2x SSA23L BYG23M BYG22 s1xl SMB Package SMBYW01
Text: Vishay Gen Semi PDD Cross Reference Guide Ultra Fast Fast Standard Chip Tech Package Gen Semi Gen Semi Alternative S1Px S1x BYG10x S2xMA S2x S3x S5x S4Px GF1x RS1x RS2x RS3x RS1Px ESH1Px ES1Px ES1x US1x BYG20x BYG22x BYG23M ES2x MURS2x0 1.0 1.0 1.5 1.5 2.0
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BYG10x
BYG20x
BYG22x
BYG23M
USB260
MRS150x
SMBYW01
SMBYW02
STTH3L06
STTH3R06
MRA400x
SS2x
B340A
ES2x
SSA23L
BYG23M
BYG22
s1xl
SMB Package
SMBYW01
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Untitled
Abstract: No abstract text available
Text: SS22M thru SS24M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020
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SS22M
SS24M
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1308026
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PDF
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Untitled
Abstract: No abstract text available
Text: SS22T3G, SS24T3G, NRVBSS24T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
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SS22T3G,
SS24T3G,
NRVBSS24T3G
SS24/D
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