Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SS12 1N5817 SCHOTTKY BARRIER RECTIFIER Search Results

    SS12 1N5817 SCHOTTKY BARRIER RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SS12 1N5817 SCHOTTKY BARRIER RECTIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5822 SS34

    Abstract: do213ab SBL3040PT 1N5819 SS14 SBL1640CT 1N5822 MELF DO204AL do214ab SS14 melf SBL1040CT
    Text: SCHOTTKY RECTIFIERS 0.6 TO 40.0 AMPERES INTRODUCTION TO SCHOTTKY RECTIFIERS General Semiconductor’s Schottky rectifier is the ideal product for high speed and low power loss applications. Their metalsilicon junctions and majority carrier condition results in extremely fast recovery times less than 10ns and very low forward


    Original
    PDF capabilit247AD MBR4035PT MBR4060PT O-247AD SBL25L20CT SBL4030PT SBL4040PT SD241P 1N5822 SS34 do213ab SBL3040PT 1N5819 SS14 SBL1640CT 1N5822 MELF DO204AL do214ab SS14 melf SBL1040CT

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER RECTIFIERS TYPE Working Peak Reverse Voltage VRWM V Average Rectified Current @ Half-Wave Resistive Load 60Hz Forward Peak Surge Maximum Reverse Current Current @ VRWM @ 8.3 ms Superimposed @ 25OC TL* Io @ TL* A 壓 Maximum Forward Voltage @ 25OC TL*


    Original
    PDF DO-214AA SMB5817 SMB5818 SMB5819 SMBSR105 SMBSR106 SMBSR108 SMBSR1010 SK110

    1n5819 smd

    Abstract: 1N5817 smd 1N5818 smd 1N5819 SMA 1N5819 SS14 1N5817-1N5819 maximum current rating of diodes SS12 1N5817 1n5817 sma 1N5817 diode
    Text: Diodes SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 DO-214AC SMA Unit: mm 3.93 3.73 4.597 3.988 1.575 1.397 Features 1 2 For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction 2.896 2.489 1.67 1.47 2.38 2.18 5.49


    Original
    PDF 1N5817-1N5819 DO-214AC 1N5817 1N5818 1N5819 1n5819 smd 1N5817 smd 1N5818 smd 1N5819 SMA 1N5819 SS14 1N5817-1N5819 maximum current rating of diodes SS12 1N5817 1n5817 sma 1N5817 diode

    1N5822 SMA

    Abstract: 1N5819 SS14 1N5819 SMA 1N5820 SMA D1FS6 1N5817 Shindengen 1n5817 sma diode Do214AC ss1340 SS13
    Text: SEMICONDUCTORS DIODES, Rectifier SCHOTTKY BARRIER A range of Schottky barrier rectifiers available in surface mount or through hole package styles. STO220 SMA Choice of current rating. Supplied taped and reeled. 1 Amp VRRM V Manufacturer: Invac Device &


    Original
    PDF STO220 SMA/DO214AC, 1N5818 1N5817 1N5819 1N5821 1N5822 DO201AD 1N5820 1N5822 SMA 1N5819 SS14 1N5819 SMA 1N5820 SMA D1FS6 1N5817 Shindengen 1n5817 sma diode Do214AC ss1340 SS13

    660CT

    Abstract: MUR1620CT MBR2
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1N4001 − 4007 Lead Mounted Rectifiers 50−1000 Volts Diffused Junction . . . . . . . . . . . . . . . . . . . . . . 29 1N4933 − 4937 Fast Recovery Rectifiers 1.0 Ampere 50−600 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31


    Original
    PDF 1N4001 1N4933 1N5400 1N5408 1N5817, 1N5820, 80SQ045N MBR0520LT1, MBR0520LT3 MBR0530T1, 660CT MUR1620CT MBR2

    common anode schottky to220

    Abstract: 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky
    Text: Discrete Schottky Products VRRM IF AV VFM IRM Maximum Average Maximum Maximum Instantaneous IFSM (A) Repetitive Rectified Instantaneous Reverse Current Reverse Forward Forward ROJA (Cel/W) Voltage (V) Current (A) Voltage (V) @VR (V) (uA) Termal Resistance


    Original
    PDF 1N5820 1N5821 1N5822 SB3100 SB330 SB340 MBR4035PT MBR4045PT MBR4050PT MBR4060PT common anode schottky to220 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky

    1N4007 melf

    Abstract: p6ke80 zener 400v P6KE45 pb68 sot23 schottky 400v P6KE64 SS14 SOD123 1N5822 MELF 1N4007 minimelf
    Text: MCC CASE STYLE REFERENCE GUIDE PRODUCT GROUPS ARE SORTED BY CURRENT RATING Please note that this guide does not include the entire MCC product offering. It only includes those part numbers that are offered in a variety of packages. In some cases, the different packages could result in slightly different electrical characteristics of the


    Original
    PDF DO-35 1N4154 1N4151 1N4454 1N4148 1N914 1N4448 DL4151 DL4154 DL4454 1N4007 melf p6ke80 zener 400v P6KE45 pb68 sot23 schottky 400v P6KE64 SS14 SOD123 1N5822 MELF 1N4007 minimelf

    2CL25

    Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
    Text: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A


    Original
    PDF LL4148 500mA 1N4148B/P LL4001 1N4001 EM516 1N5391 1N5399 1N5400 1000Ifm 2CL25 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75

    MBR5045PT

    Abstract: MBR5020PT SS14 SOD123 MBR1535 MBR5035PT MBR2
    Text: MCC SCHOTTKY BARRIER RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE: -55°C TO 125°C Average Forward Maximum Working Forward Peak Current @ HalfReverse Current Peak Surge Current Wave @ VRWM Reverse @ 8.3mS MCC Resistive Load Voltage Superimposed @ 25°C TL*


    Original
    PDF M5819 1N5817 1N5818 1N5819 SR106 SR108 SR1010 SR202 SR203 SR204 MBR5045PT MBR5020PT SS14 SOD123 MBR1535 MBR5035PT MBR2

    SK34 smc

    Abstract: SR5200 MBR1060FCT MBR10100F sb2200 SK3150 MBR1535 SK44BL sr52
    Text: MCC TM Micro Commercial Components SCHOTTKY BARRIER RECTIFIERS MCC Part Number Working Peak Reverse Voltage VRWM V Average Forward Current @ HalfWave Resistive Load 60Hz IF AV @ TL A °C Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current


    Original
    PDF 1N5817 1N5818 1N5819 SR102 SR103 SR104 SR105 SR106 SR108 SR1010 SK34 smc SR5200 MBR1060FCT MBR10100F sb2200 SK3150 MBR1535 SK44BL sr52

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


    Original
    PDF 38x45Â DI108S SK5100 CP2506 sb5200 SB840

    SMD DIODE UF4007

    Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
    Text: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and


    Original
    PDF O-220, O-220A BZT52C2V4S BZT52C51S OD-323 BZX84C2V4W BZX84C51W OT-323 MMBZ5221BW MMBZ5259BW SMD DIODE UF4007 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd

    CTX12S

    Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
    Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT


    Original
    PDF SGRECT/0802 CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original
    PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original
    PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original
    PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original
    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original
    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original
    PDF MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534

    MUR420 diode

    Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


    Original
    PDF MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original
    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original
    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    1N5B22

    Abstract: 1NS819 1N5822 ss24 1N5822 SS34
    Text: SCHOTTKY RECTIFIERS PART NUMBERING SYSTEM Part numbering system for all parts excluding JEDEC registered and industry standard parts. 1. SURFACE-MOUNT 2. AXIAL SBXY - ZZZZ a SMX SSXY - ZZZZ 3. POWER PACKAGES cont'd) AAABXXYYPP- ZZZZ XX=FQmard Current (in Amps)


    OCR Scan
    PDF O-220AC O-263AB O-220AB O-247AD MBR3060PT O-247AD SD241P SBL4030PT 1N5B22 1NS819 1N5822 ss24 1N5822 SS34

    1N5822 ss24

    Abstract: 1N5819 SS14 1N5822 SS34 melf 6060V 1n6817 MBR2
    Text: SCHOTTKY RECTIFIERS PART NUMBERING SYSTEM Part numbering system for all parts excluding JEDEC registered and industry standard parts. 1. SURFACE-MOUNT 2. AXIAL AGL41 -Y Y a SMX SSXY - ZZZZ 3. POWER PACKAGES cont'd) A A A B X X Y Y P P - ZZZZ XX=Forward Current (in Amps)


    OCR Scan
    PDF AGL41 O-263 MBR2060CT MBR2545CT MBR2550CT MBR2560CT SBL2030PT SBL2040PT O-247AD SBL3030PT 1N5822 ss24 1N5819 SS14 1N5822 SS34 melf 6060V 1n6817 MBR2