SS TRANSISTOR FET Search Results

Contextual Info: MOTOROLA Order this document by BSS123LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor BSS123LT1 N-Channel 3 DRAIN Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-Source Voltage V d SS 100 Vdc G ate-Source Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h annel 3 DRAIN Motorola Preferred Device 2 SOURCE 1 MAXIMUM RATINGS 2 Symbol Value Unit Drain-Source Voltage Vd SS 100 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 |is

Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 3 DRAIN N -C h an n el — Enhancem ent 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vdc V d SS 240 Drain-Gate Voltage V d GR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive tp < 50 [is

MA4F600-298

Abstract: transistor bul 3040 MA4F600 bul 3040 fet ft 30 GHZ
Contextual Info: M/A-COn SEMICONDUCTOR "t 3 D~| SbMBSlM ODDDbMb T r- Am 3i -ss MA4F600 Series Gallium Arsenide Low Noise Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F600 series of GaAs FETs is a low cost 0.8 ¡im gate length GaAs FET. The low noise

2N7000 021

Abstract: fet 2n7000
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2 N 7 0 00 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN / MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V d SS 60 Vdc D rain-G ate Voltage R g s = 1 0 M il

2N7002LT1

Contextual Info: I MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7002LT1 N -C h a n n e l E n hancem en t 3 drain Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc VDGR 60 Vdc 'D Id mAdc 'd m

BF170LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor M M B F170LT1 N -C h an n el GATE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit D rain-Source Voltage V d SS 60 Vdc D rain-G ate Voltage VDGS 60 Vdc Gate-Source Voltage — Continuous — N on-repetitive tp < 50 (is

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN 2406L 3 DRAIN N -C h an n el — Enhancem ent Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Unit Symbol Value D rain-Source Voltage V d SS 240 Vdc D rain-G ate Voltage V d GR 60 Vdc G ate-S ource Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Rating Sym b ol Value U nit V d SS 60 Vdc V d GR 60 V dc Vg S V G SM +20 V dc Vpk Id 150 'd m 1000 Pd 400

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N -C h a n n e l — Enhancem ent VN0300L 3 DRAIN Y Motorola Preferred Device 2 GATE V TMOS 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-S ource Voltage V d SS 60 V D ra in -G a le Voltage

MTP8N45

Contextual Info: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed

IRF450 transistor

Abstract: irf450 mosfet 452 IRF452 mosfet IRF450
Contextual Info: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high

N7000

Abstract: fet 2n7000 2N7000 02911
Contextual Info: o Iß A N S Y S HiCTROmCS L I M I T E D 3 DRAIN FET Transistor N -C h a n n e l — E n h a n c e m e n t MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V d SS 60 Vdc Drain-Gate Voltage R g s = 1 V d GR 60 Vdc VGS Vg SM ±20 ±40 Vdc Vpk 'd

photocoupleur

Abstract: schema d un transistor en Convertisseur Tension Frequence MODULATION DE PHASE SI9117 equivalente frequence diodes de regulation de tension transistor C8 renco
Contextual Info: MISE EN ŒUVRE APPLICATIONS C onvertisseur à transistor de puissance intégré supportant 1 A. D5SCAM 1 R 3,3 nF 1,5 Q 82 pF 12. D 10 11 12 13 R 13 14 15 2,2 kil 16 SI9117 470 Q g NC •s e n s e V+ v cc V- SD V ref SYNC NI c csc FB R os c COMP ss 10 p1*

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

IX 1646

Abstract: 2.t transistor
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP69N03LT, PHB69N03LT, PHD69N03LT QUICK REFERENCE DATA VDSS = 25 V ’Trench’ technology Very low on-state resistance Fast switching

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high

PWM IC 7PIN

Contextual Info: TECHNICAL NOTE Large Current External FET Controller Type Switching Regulators Single-output Step-up, High-efficiency Switching Regulator Controller Type BD9763FVM ●Description BD9763FVM is a 1-channel high efficiency step-up switching regulator. It is possible to choose small application space due to its high-speed operation (Max switching frequency 1.2MHz)

diode DS10

Contextual Info: Panasonic Power Transistor Arrays F-MOS FETs PUB4701 Silicon N-Channel Power F-MOS FET • Features 0 Avalanche energy capacity guaranteed • High-speed switching • Low ON-resistance 0 No secondary breakdown 0 Low-voltage drive ■ A p p lic a tio n s

ON586

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor Logic level FET SY M B O L F E A TU R ES • • • • • • PHP87N03LT, PHB87N03LT QUICK RE FE R E N C E DATA Vdss - 25 V ’T rench’ technology

PHD55N03LT

Abstract: PHB55N03LT
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP55N03LT, PHB55N03LT, PHD55N03LT QUICK REFERENCE DATA VDSS = 25 V ’T rench’ technology Very low on-state resistance Fast switching

MC 140 transistor

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SQT404 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench’ technology. The device features very low on-state resistance