SQT404 Search Results

MC 140 transistor

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SQT404 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance

Contextual Info: Product specification Philips Semiconductors Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control

diode c550

Contextual Info: Philips Semiconductors Product specification Rectifier diodes PBYR20100CT, PBYR20100CTB series Schottky FEATURES • • • • • SYMBOL Low forward volt drop Fast switching Reverse surge capability

Contextual Info: Product specification Philips Semiconductors N-channel TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Logic level compatible

Contextual Info: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy SYMBOL FEATURES • • • • • QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK563-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

transistor P7n

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP7N40E, PHB7N40E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged SYMBOL FEATURES • • • • • • BYW29EB, BYW29ED series QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability

diode BY229

Abstract: philips Power MOSFET Selection Guide BY229-400, fast recovery diode Philips Semiconductors Power Diodes Selection Guide BY229F800 by329x BY359-1500 PBYR2040CT BY459X-1500 Philips Semiconductors Selection Guide
Contextual Info: Philips Semiconductors Power Diodes Selection Guide Schottky Rectifiers The trend towards lower supply voltages In computers and high speed logic circuits has produced a need for rectifiers with very low forward voltages. The 20 V/ 25 V range of power schottky diodes is intended for use in d.c. To d.c.

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES • • • • • • PHP130N03LT, PHB130N03LT SYMBOL ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP7N40E, PHB7N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies

11n06

Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
Contextual Info: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP3N60E, PHB3N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance

Contextual Info: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N50E, PHB6N50E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in